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公开(公告)号：US20210180200A1
公开(公告)日：2021-06-17
申请号：US16713871
申请日：2019-12-13
Applicant: MacDermid Enthone Inc.
Inventor： Shaopeng Sun , Kyle Whitten , Stephan Braye , Elie Najjar
Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.
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公开(公告)号：US10995417B2
公开(公告)日：2021-05-04
申请号：US15739314
申请日：2016-06-30
Applicant: MacDermid Enthone Inc.
Inventor： John Commander , Vincent Paneccasio, Jr. , Eric Rouya , Kyle Whitten , Shaopeng Sun , Jianwen Han
Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.
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公开(公告)号：US11807951B2
公开(公告)日：2023-11-07
申请号：US17524450
申请日：2021-11-11
Applicant: MacDermid Enthone Inc.
Inventor： Shaopeng Sun , Kyle Whitten , Stephan Braye , Elie Najjar
CPC classification number: C25D3/16 , B32B3/26 , B32B15/04 , B32B15/043 , C25D5/02 , C25D5/18 , C25D5/611 , C25D7/00 , C25D7/123 , Y10T428/1291 , Y10T428/12931 , Y10T428/12937 , Y10T428/12993 , Y10T428/2495 , Y10T428/24942 , Y10T428/265
Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.
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公开(公告)号：US11035048B2
公开(公告)日：2021-06-15
申请号：US15641756
申请日：2017-07-05
Applicant: MacDermid Enthone Inc.
Inventor： John Commander , Kyle Whitten , Vincent Paneccasio, Jr. , Shaopeng Sun , Eric Yakobson , Jianwen Han , Elie Najjar
IPC: C25D3/16 , H01L21/768 , C25D5/02 , C25D7/12 , H01L21/288 , C25D3/18 , C25D7/00
Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.
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公开(公告)号：US12157944B2
公开(公告)日：2024-12-03
申请号：US18242599
申请日：2023-09-06
Applicant: MacDermid Enthone Inc.
Inventor： Richard W. Hurtubise , Eric Yakobson , Shaopeng Sun , Taylor L Wilkins , Elie H. Najjar , Wenbo Shao
Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
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Patent Agency Ranking
公开(公告)号：US11846018B2
公开(公告)日：2023-12-19
申请号：US17665871
申请日：2022-02-07
Applicant: MacDermid Enthone Inc.
Inventor： Richard W. Hurtubise , Eric Yakobson , Shaopeng Sun , Taylor L. Wilkins , Elie H. Najjar , Wenbo Shao
CPC classification number: C23C16/403 , C23C14/02 , C23C14/081 , C23C16/02 , C25D3/00
Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
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公开(公告)号：US20210332491A1
公开(公告)日：2021-10-28
申请号：US17222058
申请日：2021-04-05
Applicant: MacDermid Enthone Inc.
Inventor： John Commander , Kyle Whitten , Vincent Paneccasio, JR. , Shaopeng Sun , Eric Yakobson , Jianwen Han , Elie Najjar
IPC: C25D3/16 , H01L21/768 , C25D5/02 , C25D7/12 , H01L21/288 , C25D3/18 , C25D7/00
Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.
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公开(公告)号：US20230407467A1
公开(公告)日：2023-12-21
申请号：US18242599
申请日：2023-09-06
Applicant: MacDermid Enthone Inc.
Inventor： Richard W. Hurtubise , Eric Yakobson , Shaopeng Sun , Taylor L. Wilkins , Elie H. Najjar , Wenbo Shao
CPC classification number: C23C16/403 , C23C16/02 , C23C14/081 , C23C14/02 , C25D3/00
Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
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公开(公告)号：US20220259724A1
公开(公告)日：2022-08-18
申请号：US17665871
申请日：2022-02-07
Applicant: MacDermid Enthone Inc.
Inventor： Richard W. Hurtubise , Eric Yakobson , Shaopeng Sun , Taylor L. Wilkins , Elie H. Najjar , Wenbo Shao
Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
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公开(公告)号：US20220136123A1
公开(公告)日：2022-05-05
申请号：US17524450
申请日：2021-11-11
Applicant: MacDermid Enthone Inc.
Inventor： Shaopeng Sun , Kyle Whitten , Stephan Braye , Elie Najjar
Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.
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