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公开(公告)号：US20210180200A1
公开(公告)日：2021-06-17
申请号：US16713871
申请日：2019-12-13
Applicant: MacDermid Enthone Inc.
Inventor： Shaopeng Sun , Kyle Whitten , Stephan Braye , Elie Najjar
Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.
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公开(公告)号：US20220136123A1
公开(公告)日：2022-05-05
申请号：US17524450
申请日：2021-11-11
Applicant: MacDermid Enthone Inc.
Inventor： Shaopeng Sun , Kyle Whitten , Stephan Braye , Elie Najjar
Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.
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公开(公告)号：US11807951B2
公开(公告)日：2023-11-07
申请号：US17524450
申请日：2021-11-11
Applicant: MacDermid Enthone Inc.
Inventor： Shaopeng Sun , Kyle Whitten , Stephan Braye , Elie Najjar
CPC classification number: C25D3/16 , B32B3/26 , B32B15/04 , B32B15/043 , C25D5/02 , C25D5/18 , C25D5/611 , C25D7/00 , C25D7/123 , Y10T428/1291 , Y10T428/12931 , Y10T428/12937 , Y10T428/12993 , Y10T428/2495 , Y10T428/24942 , Y10T428/265
Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.
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公开(公告)号：US11035048B2
公开(公告)日：2021-06-15
申请号：US15641756
申请日：2017-07-05
Applicant: MacDermid Enthone Inc.
Inventor： John Commander , Kyle Whitten , Vincent Paneccasio, Jr. , Shaopeng Sun , Eric Yakobson , Jianwen Han , Elie Najjar
IPC: C25D3/16 , H01L21/768 , C25D5/02 , C25D7/12 , H01L21/288 , C25D3/18 , C25D7/00
Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.
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Patent Agency Ranking
公开(公告)号：US20210332491A1
公开(公告)日：2021-10-28
申请号：US17222058
申请日：2021-04-05
Applicant: MacDermid Enthone Inc.
Inventor： John Commander , Kyle Whitten , Vincent Paneccasio, JR. , Shaopeng Sun , Eric Yakobson , Jianwen Han , Elie Najjar
IPC: C25D3/16 , H01L21/768 , C25D5/02 , C25D7/12 , H01L21/288 , C25D3/18 , C25D7/00
Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.
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公开(公告)号：US20180355502A1
公开(公告)日：2018-12-13
申请号：US15617482
申请日：2017-06-08
Applicant: MacDermid Enthone Inc.
Inventor： Elie Najjar , John Commander , Thomas Richardson , Tao Chi Liu , Jiang Chiang
IPC: C25D7/12 , C25D3/38 , C25D5/02 , C25D5/34 , H01L21/288 , H01L23/00 , H01L21/768 , H01L23/522 , H01L23/532
CPC classification number: C25D7/123 , C25D3/38 , C25D5/02 , C25D5/34 , H01L21/2885 , H01L21/76879 , H01L23/3114 , H01L23/5226 , H01L23/53228 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05017 , H01L2224/11462 , H01L2224/13005 , H01L2224/13017 , H01L2224/13147 , H01L2924/20641 , H01L2924/20642 , H01L2924/2075 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753
Abstract: Features such as bumps, pillars and/or vias can be plated best using current with either a square wave or square wave with open circuit wave form. Using the square wave or square wave with open circuit wave forms of plating current, produces features such as bumps, pillars, and vias with optimum shape and filling characteristics. Specifically, vias are filled uniformly and completely, and pillars are formed without rounded tops, bullet shape, or waist curves. In the process, the metalizing substrate is contacted with an electrolytic copper deposition composition. The deposition composition comprises a source of copper ions, an acid component selected from among an inorganic acid, an organic sulfonic acid, and mixtures thereof, an accelerator, a suppressor, a leveler, and chloride ions.
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公开(公告)号：US12270121B2
公开(公告)日：2025-04-08
申请号：US17416703
申请日：2020-01-31
Applicant: MacDermid Enthone Inc.
Inventor： Eric Yakobson , Shaopeng Sun , Elie Najjar , Thomas Richardson , Vincent Paneccasio, Jr. , Wenbo Shao , Kyle Whitten
IPC: C25D3/18 , C25D5/02 , C25D7/12 , C25D21/10 , H01L21/288 , H01L21/768
Abstract: A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.
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公开(公告)号：US20220064811A1
公开(公告)日：2022-03-03
申请号：US17416703
申请日：2020-01-31
Applicant: MacDermid Enthone Inc.
Inventor： Eric Yakobson , Shaopeng Sun , Elie Najjar , Thomas Richardson , Vincent Paneccasio, Jr. , Wenbo Shao , Kyle Whitten
IPC: C25D3/18 , H01L21/768 , H01L21/288 , C25D7/12 , C25D5/02 , C25D21/10
Abstract: A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.
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公开(公告)号：US11230778B2
公开(公告)日：2022-01-25
申请号：US16713871
申请日：2019-12-13
Applicant: MacDermid Enthone Inc.
Inventor： Shaopeng Sun , Kyle Whitten , Stephan Braye , Elie Najjar
Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.
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