- 专利标题： FUSI gated device formation
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申请号： US17406276申请日： 2021-08-19
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公开(公告)号： US11823959B2公开(公告)日： 2023-11-21
- 发明人: Yi-Huan Chen , Chien-Chih Chou , Ta-Wei Lin , Hsiao-Chin Tuan , Alexander Kalnitsky , Kong-Beng Thei , Chia-Hong Wu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Eschweiler & Potashnik, LLC
- 分案原申请号： US16169220 2018.10.24
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L29/423 ; H01L29/66 ; H01L29/51 ; H01L29/49 ; H01L21/3105 ; H01L29/08 ; H01L21/3213 ; H01L27/092 ; H01L21/28 ; H01L29/45
摘要：
Various embodiments of the present disclosure are directed towards an integrated chip including a gate dielectric structure over a substrate. A metal layer overlies the gate dielectric structure. A conductive layer overlies the metal layer. A polysilicon layer contacts opposing sides of the conductive layer. A bottom surface of the polysilicon layer is aligned with a bottom surface of the conductive layer. A dielectric layer overlies the polysilicon layer. The dielectric layer continuously extends from sidewalls of the polysilicon layer to an upper surface of the conductive layer.
公开/授权文献
- US20210384082A1 FUSI GATED DEVICE FORMATION 公开/授权日：2021-12-09
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