- 专利标题: Dual-sided routing in 3D SiP structure
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申请号: US17690206申请日: 2022-03-09
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公开(公告)号: US11824007B2公开(公告)日: 2023-11-21
- 发明人: Po-Hao Tsai , Po-Yao Chuang , Meng-Liang Lin , Yi-Wen Wu , Shin-Puu Jeng , Techi Wong
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 分案原申请号: US16811465 2020.03.06
- 主分类号: H01L23/538
- IPC分类号: H01L23/538 ; H01L21/48 ; H01L21/56 ; H01L21/768 ; H01L23/00
摘要:
A semiconductor package is fabricated by attaching a first component to a second component. The first component is assembled by forming a first redistribution structure over a substrate. A through via is then formed over the first redistribution structure, and a die is attached to the first redistribution structure active-side down. The second component includes a second redistribution structure, which is then attached to the through via. A molding compound is deposited between the first redistribution structure and the second redistribution structure and further around the sides of the second component.
公开/授权文献
- US20220199541A1 Dual-sided Routing in 3D SiP Structure 公开/授权日:2022-06-23
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