Invention Grant
- Patent Title: Word line zoned adaptive initial program voltage for non-volatile memory
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Application No.: US17351533Application Date: 2021-06-18
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Publication No.: US11854620B2Publication Date: 2023-12-26
- Inventor: Erika Penzo , Han-Ping Chen , Henry Chin
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/08 ; G11C11/56 ; G11C16/10 ; G11C16/34 ; H10B41/27 ; H10B43/27

Abstract:
An apparatus is provided that includes a plurality of word lines that include a plurality of word line zones, a plurality of non-volatile memory cells coupled to the plurality of word lines, and a control circuit coupled to the non-volatile memory cells. The control circuit is configured to determine a corresponding initial program voltage for each of the word line zones. Each corresponding initial program voltage is determined based on a number of program erase cycles.
Public/Granted literature
- US20220406380A1 WORD LINE ZONED ADAPTIVE INITIAL PROGRAM VOLTAGE FOR NON-VOLATILE MEMORY Public/Granted day:2022-12-22
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