NONVOLATILE MEMORY WITH ONGOING PROGRAM READ

    公开(公告)号:US20240221803A1

    公开(公告)日:2024-07-04

    申请号:US18360273

    申请日:2023-07-27

    IPC分类号: G11C7/10

    摘要: An apparatus includes control circuits configured to connect to a plurality of non-volatile memory cells. The control circuits are configured to receive a read command directed to at least one logical page of data during a program operation to store the at least one logical page of data in a plurality of non-volatile memory cells. The control circuits are further configured to stop the program operation at an intermediate stage of programming, read the plurality of non-volatile memory cells at the intermediate stage to obtain first partial data of at least one logical page and obtain the at least one logical page of data by combining the first partial data with second partial data of the at least one logical page stored in data latches.

    PRECHARGE SCHEME DURING PROGRAMMING OF A MEMORY DEVICE

    公开(公告)号:US20240079062A1

    公开(公告)日:2024-03-07

    申请号:US17903618

    申请日:2022-09-06

    IPC分类号: G11C16/10 G11C11/56 G11C16/34

    摘要: The memory device includes at least one memory block with source and drain sides and a plurality of memory cells arranged in a plurality of word lines. The word lines are arranged in a plurality of independently programmable and erasable sub-blocks. Control circuitry is configured to program the memory cells of a selected sub-block and determine a location of the within the at least one memory block and determine a programming condition of at least one unselected sub-block. The control circuitry is also configured to program at least one word line in the selected sub-block in a plurality of program loops that include pre-charging processes. The control circuitry pre-charges a plurality of channels from either the source or drain side based on at least one of the location of the selected sub-block within the memory block and the programming condition of the at least one unselected sub-block.

    MODIFIED VERIFY SCHEME FOR PROGRAMMING A MEMORY APPARATUS

    公开(公告)号:US20210202022A1

    公开(公告)日:2021-07-01

    申请号:US16728716

    申请日:2019-12-27

    摘要: A memory apparatus and method of operation is provided. The apparatus includes memory cells coupled to a control circuit. The control circuit is configured to perform a first programming stage including iteratively programming each of the memory cells to first program states and verifying that the memory cells have a threshold voltage above one of a plurality of first verify voltages corresponding to the first program states. The first programming stage ends before all of the memory cells are verified thereby leaving a fraction of the memory cells below the one of the plurality of first verify voltages. The control circuit also performs a second programming stage including iteratively programming each of the memory cells to second program states and verifying that at least a predetermined number of the memory cells have the threshold voltage above one of a plurality of second verify voltages corresponding to the second program states.

    State adaptive predictive programming

    公开(公告)号:US10748622B2

    公开(公告)日:2020-08-18

    申请号:US16283464

    申请日:2019-02-22

    摘要: Techniques are provided for predictively programming of non-volatile memory, which may reduce the number of verify operations. In one aspect, a programming circuit is configured to program memory cells to a verify low voltage and to program a set of the memory cells to target states. The set comprises memory cells having a threshold voltage between the verify low voltage and a verify high voltage. To program the set of the memory cells to the target states, the programming circuit is configured to apply two or more program pulses to memory cells in the set without verifying whether the memory cells have reached their respective target states, including: apply a first and second program enable voltages to the bit lines associated with the memory cells having different strengths.