Invention Grant
- Patent Title: DC bias in plasma process
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Application No.: US17869557Application Date: 2022-07-20
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Publication No.: US11854766B2Publication Date: 2023-12-26
- Inventor: Sheng-Liang Pan , Bing-Hung Chen , Chia-Yang Hung , Jyu-Horng Shieh , Shu-Huei Suen , Syun-Ming Jang , Jack Kuo-Ping Kuo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/321
- IPC: H01L21/321 ; H01L21/311 ; H01J37/32 ; H01L21/02

Abstract:
Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.
Public/Granted literature
- US20220359158A1 DC Bias in Plasma Process Public/Granted day:2022-11-10
Information query
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