公开(公告)号：US20190267211A1

公开(公告)日：2019-08-29

申请号：US16177530

申请日：2018-11-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Liang Pan ,  Bing-Hung Chen ,  Chia-Yang Hung ,  Jyu-Horng Shieh ,  Shu-Huei Suen ,  Syun-Ming Jang ,  Jack Kuo-Ping Kuo

IPC: H01J37/32 ,  H01L21/02

Abstract: Embodiments described herein relate to plasma processes. A tool includes a pedestal. The pedestal is configured to support a semiconductor substrate. The tool includes a bias source. The bias source is electrically coupled to the pedestal. The bias source is operable to bias the pedestal with a direct current (DC) voltage. The tool includes a plasma generator. The plasma generator is operable to generate a plasma remote from the pedestal. A method for semiconductor processing includes performing a plasma process on a substrate in a tool. The plasma process includes flowing a gas into the tool. The plasma process includes biasing a pedestal that supports the substrate in the tool. The plasma process includes igniting a plasma in the tool using the gas.

公开(公告)号：US20240071722A1

公开(公告)日：2024-02-29

申请号：US18504415

申请日：2023-11-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Liang Pan ,  Bing-Hung Chen ,  Chia-Yang Hung ,  Jyu-Horng Shieh ,  Shu-Huei Suen ,  Syun-Ming Jang ,  Jack Kuo-Ping Kuo

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/321

CPC classification number: H01J37/32027 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32715 ,  H01L21/02063 ,  H01L21/0212 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31138 ,  H01L21/321 ,  H01J2237/3341

Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

公开(公告)号：US11227788B2

公开(公告)日：2022-01-18

申请号：US16921015

申请日：2020-07-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Teng-Chun Tsai ,  Bing-Hung Chen ,  Chien-Hsun Wang ,  Cheng-Tung Lin ,  Chih-Tang Peng ,  De-Fang Chen ,  Huan-Just Lin ,  Li-Ting Wang ,  Yung-Cheng Lu

IPC: H01L29/66 ,  H01L21/762 ,  H01L21/3105 ,  H01L29/78 ,  H01L21/311 ,  B82Y10/00 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/775 ,  H01L29/06 ,  H01L29/41

Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.

公开(公告)号：US20220359158A1

公开(公告)日：2022-11-10

申请号：US17869557

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Liang Pan ,  Bing-Hung Chen ,  Chia-Yang Hung ,  Jyu-Horng Shieh ,  Shu-Huei Suen ,  Syun-Ming Jang ,  Jack Kuo-Ping Kuo

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/321 ,  H01L21/311

Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

公开(公告)号：US11699574B2

公开(公告)日：2023-07-11

申请号：US17027304

申请日：2020-09-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ru-Chien Chiu ,  Bing-Hung Chen ,  Keith Kuang-Kuo Koai

IPC: H01J37/32 ,  C25D11/24 ,  C25D11/04 ,  C25D11/08 ,  C25D11/16

CPC classification number: H01J37/32495 ,  C25D11/04 ,  C25D11/045 ,  C25D11/08 ,  C25D11/16 ,  C25D11/246 ,  H01J37/32467

Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

公开(公告)号：US12217936B2

公开(公告)日：2025-02-04

申请号：US18504415

申请日：2023-11-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Liang Pan ,  Bing-Hung Chen ,  Chia-Yang Hung ,  Jyu-Horng Shieh ,  Shu-Huei Suen ,  Syun-Ming Jang ,  Jack Kuo-Ping Kuo

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311 ,  H01L21/321

Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

公开(公告)号：US11854766B2

公开(公告)日：2023-12-26

申请号：US17869557

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Liang Pan ,  Bing-Hung Chen ,  Chia-Yang Hung ,  Jyu-Horng Shieh ,  Shu-Huei Suen ,  Syun-Ming Jang ,  Jack Kuo-Ping Kuo

IPC: H01L21/321 ,  H01L21/311 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32027 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32715 ,  H01L21/0212 ,  H01L21/02063 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31138 ,  H01L21/321 ,  H01J2237/3341

Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

公开(公告)号：US10784087B2

公开(公告)日：2020-09-22

申请号：US16383548

申请日：2019-04-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ru-Chien Chiu ,  Bing-Hung Chen ,  Keith Kuang-Kuo Koai

IPC: H01J37/32 ,  C25D11/04 ,  C25D11/24

Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75 ° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

公开(公告)号：US10707114B2

公开(公告)日：2020-07-07

申请号：US16049520

申请日：2018-07-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Teng-Chun Tsai ,  Bing-Hung Chen ,  Chien-Hsun Wang ,  Cheng-Tung Lin ,  Chih-Tang Peng ,  De-Fang Chen ,  Huan-Just Lin ,  Li-Ting Wang ,  Yung-Cheng Lu

IPC: H01L29/66 ,  H01L21/762 ,  H01L21/3105 ,  H01L29/78 ,  H01L21/311 ,  B82Y10/00 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/775 ,  H01L29/06 ,  H01L29/41

Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.

公开(公告)号：US10262839B2

公开(公告)日：2019-04-16

申请号：US15182334

申请日：2016-06-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ru-Chien Chiu ,  Bing-Hung Chen ,  Keith Kuang-Kuo Koai

IPC: H01J37/32 ,  C25D11/04 ,  C25D11/24

Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.