Invention Grant
- Patent Title: Footing removal in cut-metal process
-
Application No.: US17073784Application Date: 2020-10-19
-
Publication No.: US11854903B2Publication Date: 2023-12-26
- Inventor: Ming-Chi Huang , Kuo-Bin Huang , Ying-Liang Chuang , Ming-Hsi Yeh
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L27/092 ; H01L21/8234 ; H01L21/8238 ; H01L21/3213 ; H01L21/311
Abstract:
A method includes forming a gate stack, which includes a first portion over a portion of a first semiconductor fin, a second portion over a portion of a second semiconductor fin, and a third portion connecting the first portion to the second portion. An anisotropic etching is performed on the third portion of the gate stack to form an opening between the first portion and the second portion. A footing portion of the third portion remains after the anisotropic etching. The method further includes performing an isotropic etching to remove a metal gate portion of the footing portion, and filling the opening with a dielectric material.
Public/Granted literature
- US20210057287A1 Footing Removal in Cut-Metal Process Public/Granted day:2021-02-25
Information query
IPC分类:
