Invention Grant
- Patent Title: Semiconductor package and method of forming same
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Application No.: US17333399Application Date: 2021-05-28
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Publication No.: US11854927B2Publication Date: 2023-12-26
- Inventor: Ting-Chen Tseng , Sih-Hao Liao , Yu-Hsiang Hu , Hung-Jui Kuo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/00 ; H01L21/311 ; H01L21/56

Abstract:
A package and a method forming the same are provided. The package includes an integrated circuit die. A sidewall of the integrated circuit die has a first facet and a second facet. The first facet and the second facet have different slopes. The package includes an encapsulant surrounding the integrated circuit die and in physical contact with the first facet and the second facet and an insulating layer over the integrated circuit die and the encapsulant. An upper surface of the integrated circuit die is lower than an upper surface of the encapsulant. A sidewall of the insulating layer is substantially coplanar with the first facet.
Public/Granted literature
- US20220310467A1 SEMICONDUCTOR PACKAGE AND METHOD OF FORMING SAME Public/Granted day:2022-09-29
Information query
IPC分类: