Invention Grant
- Patent Title: Three-dimensional semiconductor memory devices and methods of fabricating the same
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Application No.: US18094484Application Date: 2023-01-09
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Publication No.: US11888042B2Publication Date: 2024-01-30
- Inventor: Kwang Soo Seol , Chanjin Park , Kihyun Hwang , Hanmei Choi , Sunghoi Hur , Wansik Hwang , Toshiro Nakanishi , Kwangmin Park , Juyul Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR 20100027449 2010.03.26 KR 20100055098 2010.06.10 KR 20100064413 2010.07.05 KR 20100064415 2010.07.05 KR 20100084971 2010.08.31
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/423 ; H01L21/3213 ; H10B41/20 ; H10B41/27 ; H10B43/20 ; H10B43/27 ; H01L29/792 ; H01L29/51

Abstract:
Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.
Public/Granted literature
- US20230163182A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2023-05-25
Information query
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