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公开(公告)号：US09768266B2
公开(公告)日：2017-09-19
申请号：US14796569
申请日：2015-07-10
发明人： Kwang Soo Seol , Chanjin Park , Kihyun Hwang , Hanmei Choi , Sunghoi Hur , Wansik Hwang , Toshiro Nakanishi , Kwangmin Park , Juyul Lee
IPC分类号： H01L29/423 , H01L21/3213 , H01L27/06 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/792 , H01L27/11582 , H01L29/51
CPC分类号： H01L29/42348 , H01L21/32137 , H01L27/0688 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L27/11582 , H01L29/511 , H01L29/517 , H01L29/792 , H01L2924/0002 , H01L2924/00
摘要： Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.
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公开(公告)号：US10903327B2
公开(公告)日：2021-01-26
申请号：US16859437
申请日：2020-04-27
发明人： Kwang Soo Seol , Chanjin Park , Kihyun Hwang , Hanmei Choi , Sunghoi Hur , Wansik Hwang , Toshiro Nakanishi , Kwangmin Park , Juyul Lee
IPC分类号： H01L21/3213 , H01L29/423 , H01L27/06 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/792 , H01L27/11582 , H01L29/51
摘要： Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.
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公开(公告)号：US11888042B2
公开(公告)日：2024-01-30
申请号：US18094484
申请日：2023-01-09
发明人： Kwang Soo Seol , Chanjin Park , Kihyun Hwang , Hanmei Choi , Sunghoi Hur , Wansik Hwang , Toshiro Nakanishi , Kwangmin Park , Juyul Lee
IPC分类号： H01L27/06 , H01L29/423 , H01L21/3213 , H10B41/20 , H10B41/27 , H10B43/20 , H10B43/27 , H01L29/792 , H01L29/51
CPC分类号： H01L29/42348 , H01L21/32137 , H01L27/0688 , H01L29/511 , H01L29/517 , H01L29/792 , H10B41/20 , H10B41/27 , H10B43/20 , H10B43/27 , H01L2924/0002 , H01L2924/0002 , H01L2924/00
摘要： Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.
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4.发明授权公开(公告)号：US09564499B2
公开(公告)日：2017-02-07
申请号：US13972533
申请日：2013-08-21
发明人： Kwang-Soo Seol , Chanjin Park , Ki-Hyun Hwang , Hanmei Choi , Sunghoi Hur , Wansik Hwang , Toshiro Nakanishi , Kwangmin Park , Ju-Yul Lee
IPC分类号： H01L29/423 , H01L21/3213 , H01L27/06 , H01L27/115 , H01L29/792 , H01L29/51
CPC分类号： H01L29/42348 , H01L21/32137 , H01L27/0688 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L27/11582 , H01L29/511 , H01L29/517 , H01L29/792 , H01L2924/0002 , H01L2924/00
摘要： Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.
摘要翻译： 三维半导体存储器件及其制造方法。 三维半导体器件包括具有布置在衬底上的顺序层叠电极的电极结构，穿透电极结构的半导体图案，以及插入在半导体图案和电极结构之间的包括第一图案和第二图案的存储元件，第一 垂直延伸以横过电极的图案和第二图案水平延伸以跨越半导体图案。
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公开(公告)号：US20230163182A1
公开(公告)日：2023-05-25
申请号：US18094484
申请日：2023-01-09
发明人： Kwang Soo Seol , Chanjin Park , Kihyun Hwang , Hanmei Choi , Sunghoi Hur , Wansik Hwang , Toshiro Nakanishi , Kwangmin Park , Juyul Lee
IPC分类号： H01L29/423 , H01L21/3213 , H01L27/06 , H10B41/20 , H10B41/27 , H10B43/20 , H10B43/27 , H01L29/792 , H01L29/51
CPC分类号： H01L29/42348 , H01L21/32137 , H01L27/0688 , H10B41/20 , H10B41/27 , H10B43/20 , H10B43/27 , H01L29/792 , H01L29/511 , H01L29/517 , H01L2924/0002
摘要： Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.
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公开(公告)号：US11588032B2
公开(公告)日：2023-02-21
申请号：US17129667
申请日：2020-12-21
发明人： Kwang Soo Seol , Chanjin Park , Kihyun Hwang , Hanmei Choi , Sunghoi Hur , Wansik Hwang , Toshiro Nakanishi , Kwangmin Park , Juyul Lee
IPC分类号： H01L29/51 , H01L29/423 , H01L21/3213 , H01L27/06 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/792 , H01L27/11582
摘要： Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.
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公开(公告)号：US20230044895A1
公开(公告)日：2023-02-09
申请号：US17969022
申请日：2022-10-19
发明人： Kwang Soo Seol , Chanjin Park , Kihyun Hwang , Hanmei Choi , Sunghoi Hur , Wansik Hwang , Toshiro Nakanishi , Kwangmin Park , Juyul Lee
IPC分类号： H01L29/423 , H01L21/3213 , H01L27/06 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/792 , H01L27/11582 , H01L29/51
摘要： Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.
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公开(公告)号：US20210111260A1
公开(公告)日：2021-04-15
申请号：US17129667
申请日：2020-12-21
发明人： Kwang Soo Seol , Chanjin Park , Kihyun Hwang , Hanmei Choi , Sunghoi Hur , Wansik Hwang , Toshiro Nakanishi , Kwangmin Park , Juyul Lee
IPC分类号： H01L29/423 , H01L21/3213 , H01L27/06 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/792 , H01L27/11582 , H01L29/51
摘要： Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.
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公开(公告)号：US20200258994A1
公开(公告)日：2020-08-13
申请号：US16859437
申请日：2020-04-27
发明人： Kwang Soo Seol , Chanjin Park , Kihyun Hwang , Hanmei Choi , Sunghoi Hur , Wansik Hwang , Toshiro Nakanishi , Kwangmin Park , Juyul Lee
IPC分类号： H01L29/423 , H01L29/51 , H01L27/11582 , H01L29/792 , H01L27/11578 , H01L27/11556 , H01L27/11551 , H01L27/06 , H01L21/3213
摘要： Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.
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