Invention Grant
- Patent Title: Film forming apparatus and film forming method
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Application No.: US17354121Application Date: 2021-06-22
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Publication No.: US11894222B2Publication Date: 2024-02-06
- Inventor: Atsushi Takeuchi , Toru Kitada , Kanto Nakamura , Atsushi Gomi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Venjuris, P.C.
- Priority: JP 20108738 2020.06.24
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/52 ; C23C14/35 ; H10N50/01 ; H10N50/85

Abstract:
A film forming apparatus for forming a film on a substrate by using a magnetron sputtering method. The film forming apparatus includes: a substrate holder configured to hold a substrate; a target holder configured to hold a target made of a ferromagnetic material to face the substrate holder; a magnet provided on a surface of the target holder opposite to the substrate holder, and configured to leak a magnetic field to a front surface of the target held by the target holder that is a surface close to the substrate holder; and a magnetic field strength measurement device configured to measure a strength of the magnetic field.
Public/Granted literature
- US20210407779A1 FILM FORMING APPARATUS AND FILM FORMING METHOD Public/Granted day:2021-12-30
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