公开(公告)号：US11894222B2

公开(公告)日：2024-02-06

申请号：US17354121

申请日：2021-06-22

申请人： Tokyo Electron Limited

发明人： Atsushi Takeuchi ,  Toru Kitada ,  Kanto Nakamura ,  Atsushi Gomi

IPC分类号： H01J37/34 ,  C23C14/52 ,  C23C14/35 ,  H10N50/01 ,  H10N50/85

CPC分类号： H01J37/3461 ,  C23C14/35 ,  C23C14/52 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3479 ,  H10N50/01 ,  H10N50/85 ,  H01J2237/24564 ,  H01J2237/332

摘要： A film forming apparatus for forming a film on a substrate by using a magnetron sputtering method. The film forming apparatus includes: a substrate holder configured to hold a substrate; a target holder configured to hold a target made of a ferromagnetic material to face the substrate holder; a magnet provided on a surface of the target holder opposite to the substrate holder, and configured to leak a magnetic field to a front surface of the target held by the target holder that is a surface close to the substrate holder; and a magnetic field strength measurement device configured to measure a strength of the magnetic field.