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公开(公告)号：US20240363410A1
公开(公告)日：2024-10-31
申请号：US18620326
申请日：2024-03-28
发明人： Ryota Yonezawa , Kai-Hung Yu , Yuji Otsuki , Kenichi Imakita , Atsushi Gomi , Kohichi Satoh , Tadahiro Ishizaka , Takashi Sakuma , Hidenao Suzuki
IPC分类号： H01L21/768
CPC分类号： H01L21/76897 , H01L21/76804 , H01L21/76805
摘要： A method for forming a semiconductor device can include providing a substrate including a via in a dielectric layer, forming a ruthenium metal plug in the via, and at least part of the ruthenium metal plug can be formed directly on the dielectric layer in the via, forming a metal cap layer directly on the ruthenium metal plug, and forming a metallization layer, such as a copper-containing trench, over the ruthenium metal plug, such that the metal cap layer is between the metallization layer and the ruthenium metal plug, which can prevent intermixing of the ruthenium of the ruthenium metal plug with the metal or metals in the metallization layer.
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公开(公告)号：US11894222B2
公开(公告)日：2024-02-06
申请号：US17354121
申请日：2021-06-22
发明人： Atsushi Takeuchi , Toru Kitada , Kanto Nakamura , Atsushi Gomi
CPC分类号： H01J37/3461 , C23C14/35 , C23C14/52 , H01J37/3405 , H01J37/3426 , H01J37/3479 , H10N50/01 , H10N50/85 , H01J2237/24564 , H01J2237/332
摘要： A film forming apparatus for forming a film on a substrate by using a magnetron sputtering method. The film forming apparatus includes: a substrate holder configured to hold a substrate; a target holder configured to hold a target made of a ferromagnetic material to face the substrate holder; a magnet provided on a surface of the target holder opposite to the substrate holder, and configured to leak a magnetic field to a front surface of the target held by the target holder that is a surface close to the substrate holder; and a magnetic field strength measurement device configured to measure a strength of the magnetic field.
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公开(公告)号：US20150187549A1
公开(公告)日：2015-07-02
申请号：US14404143
申请日：2013-03-28
发明人： Toru Kitada , Kanto Nakamura , Atsushi Gomi , Tetsuya Miyashita
IPC分类号： H01J37/34
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3405 , H01J37/3417 , H01J37/3447 , H01J37/3452 , H01J2237/332
摘要： To provide technology that can increase the productivity of an apparatus when magnetron sputtering is carried out using a target formed from magnetic material. The present disclosure is an apparatus provided with: a cylindrical body that is a target formed from magnetic material, disposed above a substrate; a rotating mechanism that rotates this cylindrical body around the axis of the cylindrical body; a magnet array provided inside a hollow part of the cylindrical body; and a power supply that applies voltage to the cylindrical body. Furthermore, the magnet array has a cross sectional profile, orthogonal to the axis of the cylindrical body. Thus, even if a target with a comparatively large thickness is used, reductions in the intensity of the magnetic field that leaks from the target can be suppressed, and local progress in erosion can be suppressed.
摘要翻译： 提供使用由磁性材料形成的靶进行磁控溅射时能够提高装置的生产率的技术。 本公开是一种设备，其具有：设置在基板上方的由磁性材料形成的靶的圆筒体; 旋转机构，其使该圆筒体围绕圆柱体的轴线旋转; 设置在所述圆筒体的中空部内的磁体阵列; 以及向圆柱体施加电压的电源。 此外，磁体阵列具有与圆柱体的轴线正交的横截面轮廓。 因此，即使使用厚度较大的靶，也能够抑制从目标泄漏的磁场强度的降低，能够抑制局部的侵蚀。
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公开(公告)号：US20150044368A1
公开(公告)日：2015-02-12
申请号：US14511399
申请日：2014-10-10
发明人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Kaoru Yamamoto , Satoshi Taga
IPC分类号： C23C16/52 , C23C16/455 , C23C16/16
CPC分类号： C23C16/52 , C23C16/16 , C23C16/45514 , C23C16/45521 , C23C16/45597 , C23C16/4585 , H01L21/67017 , H01L21/68785
摘要： Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for the purpose of placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition suppressing gas supply means which is arranged in the placing table for the purpose of supplying decomposition suppressing gas, which suppresses thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table.
摘要翻译： 提供一种放置台结构，其设置在处理容器中并且要对其进行处理，以便通过使用产生具有可逆性的热分解反应的原料气体在处理容器中在被检体上形成薄膜。 放置台结构设置有用于将待处理对象放置在放置表面（即，放置台结构的上表面）和布置在放置台中的分解抑制气体供应装置的放置台 用于将抑制原料气体的热分解的分解抑制气体朝向放置在放置台的放置面的被处理体的周边部分的目的。
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公开(公告)号：US20230411142A1
公开(公告)日：2023-12-21
申请号：US18198355
申请日：2023-05-17
发明人： Ryota Yonezawa , Kai-Hung Yu , Tadahiro Ishizaka , Atsushi Gomi , Hidenao Suzuki
IPC分类号： H01L21/02 , H01L21/3205
CPC分类号： H01L21/02068 , H01L21/32051
摘要： Improved process flows and methods are provided for processing a semiconductor substrate have exposed dielectric and metal-containing surfaces. More specifically, improved process flows and methods are provided for pre-cleaning the metal-containing surfaces prior to depositing a metal material onto the metal-containing surfaces. Hot vapor-phase etching is used to remove a native oxide film from the metal-containing surfaces. Prior to hot vapor-phase etching, the semiconductor substrate is exposed to a first silicon-containing gas to deposit an inhibitor film onto the exposed dielectric and metal-containing surfaces. The inhibitor film protects the dielectric surfaces while the native oxide film is being removed via the hot vapor-phase etching. In some embodiments, the semiconductor substrate is exposed to a second silicon-containing gas, after hot vapor-phase etching, to remove residues of the hot vapor-phase etching process from the pre-cleaned metal-containing surfaces.
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6.发明申请公开(公告)号：US20220415634A1
公开(公告)日：2022-12-29
申请号：US17843076
申请日：2022-06-17
发明人： Kenichi Imakita , Hiroaki Chihaya , Toru Kitada , Atsushi Gomi
摘要： A film forming apparatus for forming a film by magnetron sputtering includes a substrate support supporting the substrate, a holder holding a target for emitting sputtered particles, a magnet unit having a magnet, first and second movement mechanisms configured to periodically move the substrate support and the magnet unit, respectively, and a controller. The controller is configured to control the first movement mechanism and the second movement mechanism so that a phase in a periodic movement of the substrate support remains the same at a start of film formation and at an end of film formation, a phase in a periodic movement of the magnet unit remains the same at a start of film formation and at an end of film formation, and the phase in the periodic movement of the substrate support and the phase in the periodic movement of the magnet unit do not match during film formation.
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7.发明申请公开(公告)号：US20150187546A1
公开(公告)日：2015-07-02
申请号：US14403833
申请日：2013-04-30
CPC分类号： C23C14/5853 , C23C14/08 , C23C14/14 , C23C14/3464 , C23C14/352 , C23C14/564 , H01J37/34 , H01J37/3405 , H01J37/3426 , H01J37/3429 , H01J37/3447 , H01J2237/3322 , H01L43/12
摘要： The present disclosure provides a vacuum-processing apparatus for forming a metal film on a substrate by sputtering targets with ions of plasma, and then oxidizing the metal film, the apparatus including: a first target composed of a material having a property of adsorbing oxygen; a second target composed of a metal; a power supply unit configured to apply a voltage to the targets; a shutter configured to prevent particles generated from one of the targets from adhering to the other of the targets; a shielding member; an oxygen supply unit configured to supply an oxygen-containing gas to the substrate mounted on the mounting unit; and a control unit configured to perform supplying a plasma-generating voltage to the targets and sputtering the targets and supplying the oxygen-containing gas from the oxygen supply unit to the substrate.
摘要翻译： 本发明提供一种真空处理装置，用于通过用等离子体离子溅射靶材在基板上形成金属膜，然后氧化金属膜，该装置包括：由具有吸附氧性质的材料构成的第一靶; 由金属组成的第二个目标; 配置为向所述目标施加电压的电源单元; 构造成防止从一个靶产生的颗粒粘附到另一个靶的快门; 屏蔽构件; 供氧单元，被配置为向安装在所述安装单元上的所述基板供给含氧气体; 以及控制单元，其被配置为执行向所述目标提供等离子体产生电压并溅射所述目标物并将所述含氧气体从所述供氧单元供应到所述基板。
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8.发明授权公开(公告)号：US12018928B2
公开(公告)日：2024-06-25
申请号：US17853455
申请日：2022-06-29
发明人： Kazunaga Ono , Kanto Nakamura , Toru Kitada , Atsushi Gomi
CPC分类号： G01B11/0675 , G01N21/9501 , G01N2021/213
摘要： There is provided a film thickness measurement method which measures a film thickness of a specific film to be measured in a multilayer film in situ in a film formation system that forms the multilayer film on a substrate, the method comprising: regarding a plurality of films located under the film to be measured as one underlayer film, measuring a film thickness of the underlayer film, and deriving an optical constant of the underlayer film by spectroscopic interferometry; and after the film to be measured is formed, deriving a film thickness of the film to be measured by spectroscopic interferometry using the film thickness and the optical constant of the underlayer film.
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公开(公告)号：US20240011148A1
公开(公告)日：2024-01-11
申请号：US18339920
申请日：2023-06-22
发明人： Atsushi TAKEUCHI , Kazunaga Ono , Kanto Nakamura , Atsushi Gomi
CPC分类号： C23C14/547 , C23C14/042 , C23C14/34
摘要： There is provided a film forming position misalignment correction method comprising: replacing a shielding member; loading a substrate into a film forming module by a transfer mechanism and forming a film on the substrate; detecting an amount of film forming position misalignment by transferring the substrate on which the film has been formed to a film thickness measuring device; correcting a transfer position of the substrate for the transfer mechanism; and checking the correction by transferring the substrate used for measuring the amount of film forming position misalignment to the film forming module by the transfer mechanism for which the transfer position has been corrected to form a film and determining the amount of film forming position misalignment by measuring a film thickness of the formed film by the film thickness measuring device in the same manner.
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公开(公告)号：US11551918B2
公开(公告)日：2023-01-10
申请号：US16883543
申请日：2020-05-26
摘要： A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.
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