中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.016 seconds)

    Film forming position misalignment correction method and film forming system
    1.
    发明授权
    Film forming position misalignment correction method and film forming system 有权

    公开(公告)号：US12180580B2

    公开(公告)日：2024-12-31

    申请号：US18339920

    申请日：2023-06-22

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Atsushi Takeuchi ,  Kazunaga Ono ,  Kanto Nakamura ,  Atsushi Gomi

    IPC: C23C14/34 ,  C23C14/04 ,  C23C14/54 ,  H01J37/34 ,  H01J37/32

    Abstract: There is provided a film forming position misalignment correction method comprising: replacing a shielding member; loading a substrate into a film forming module by a transfer mechanism and forming a film on the substrate; detecting an amount of film forming position misalignment by transferring the substrate on which the film has been formed to a film thickness measuring device; correcting a transfer position of the substrate for the transfer mechanism; and checking the correction by transferring the substrate used for measuring the amount of film forming position misalignment to the film forming module by the transfer mechanism for which the transfer position has been corrected to form a film and determining the amount of film forming position misalignment by measuring a film thickness of the formed film by the film thickness measuring device in the same manner.

    MAGNETRON SPUTTERING APPARATUS
    3.
    发明申请
    MAGNETRON SPUTTERING APPARATUS 审中-公开
    MAGNETRON喷射装置

    公开(公告)号：US20150187549A1

    公开(公告)日：2015-07-02

    申请号：US14404143

    申请日：2013-03-28

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Toru Kitada ,  Kanto Nakamura ,  Atsushi Gomi ,  Tetsuya Miyashita

    IPC: H01J37/34

    CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3447 ,  H01J37/3452 ,  H01J2237/332

    Abstract: To provide technology that can increase the productivity of an apparatus when magnetron sputtering is carried out using a target formed from magnetic material. The present disclosure is an apparatus provided with: a cylindrical body that is a target formed from magnetic material, disposed above a substrate; a rotating mechanism that rotates this cylindrical body around the axis of the cylindrical body; a magnet array provided inside a hollow part of the cylindrical body; and a power supply that applies voltage to the cylindrical body. Furthermore, the magnet array has a cross sectional profile, orthogonal to the axis of the cylindrical body. Thus, even if a target with a comparatively large thickness is used, reductions in the intensity of the magnetic field that leaks from the target can be suppressed, and local progress in erosion can be suppressed.

    Abstract translation: 提供使用由磁性材料形成的靶进行磁控溅射时能够提高装置的生产率的技术。 本公开是一种设备，其具有：设置在基板上方的由磁性材料形成的靶的圆筒体; 旋转机构，其使该圆筒体围绕圆柱体的轴线旋转; 设置在所述圆筒体的中空部内的磁体阵列; 以及向圆柱体施加电压的电源。 此外，磁体阵列具有与圆柱体的轴线正交的横截面轮廓。 因此，即使使用厚度较大的靶，也能够抑制从目标泄漏的磁场强度的降低，能够抑制局部的侵蚀。

    Magnetron sputtering apparatus and magnetron sputtering method
    4.
    发明授权
    Magnetron sputtering apparatus and magnetron sputtering method 有权

    公开(公告)号：US11901166B2

    公开(公告)日：2024-02-13

    申请号：US17490574

    申请日：2021-09-30

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Tetsuya Miyashita ,  Kanto Nakamura ,  Yusuke Kikuchi

    IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34

    CPC classification number: H01J37/3405 ,  C23C14/3407 ,  H01J37/3244 ,  H01J37/3455

    Abstract: A magnetron sputtering apparatus is provided. The apparatus comprises: a vacuum chamber storing a substrate; a plurality of sputtering mechanisms, each including a target having one surface facing the inside of the vacuum chamber, a magnet array, and a moving mechanism for reciprocating the magnet array between a first position and a second position on the other surface of the target; a power supply for forming plasma by supplying power to targets of selected sputtering mechanisms for film formation; a gas supplier for supplying a gas for plasma formation into the vacuum chamber; and a controller for outputting a control signal, in performing the film formation, such that magnet arrays of selected and unselected sputtering mechanisms, extension lines of moving paths of the magnet arrays thereof intersecting each other in plan view, move synchronously or are located at certain positions so as to be distinct from each other.

    Vacuum-Processing Apparatus, Vacuum-Processing Method, and Storage Medium
    5.
    发明申请
    Vacuum-Processing Apparatus, Vacuum-Processing Method, and Storage Medium 有权
    真空处理设备，真空处理方法和存储介质

    公开(公告)号：US20150187546A1

    公开(公告)日：2015-07-02

    申请号：US14403833

    申请日：2013-04-30

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Shinji Furukawa ,  Atsushi Gomi ,  Tetsuya Miyashita ,  Toru Kitada ,  Kanto Nakamura

    IPC: H01J37/34 ,  C23C14/08 ,  C23C14/34

    CPC classification number: C23C14/5853 ,  C23C14/08 ,  C23C14/14 ,  C23C14/3464 ,  C23C14/352 ,  C23C14/564 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3447 ,  H01J2237/3322 ,  H01L43/12

    Abstract: The present disclosure provides a vacuum-processing apparatus for forming a metal film on a substrate by sputtering targets with ions of plasma, and then oxidizing the metal film, the apparatus including: a first target composed of a material having a property of adsorbing oxygen; a second target composed of a metal; a power supply unit configured to apply a voltage to the targets; a shutter configured to prevent particles generated from one of the targets from adhering to the other of the targets; a shielding member; an oxygen supply unit configured to supply an oxygen-containing gas to the substrate mounted on the mounting unit; and a control unit configured to perform supplying a plasma-generating voltage to the targets and sputtering the targets and supplying the oxygen-containing gas from the oxygen supply unit to the substrate.

    Abstract translation: 本发明提供一种真空处理装置，用于通过用等离子体离子溅射靶材在基板上形成金属膜，然后氧化金属膜，该装置包括：由具有吸附氧性质的材料构成的第一靶; 由金属组成的第二个目标; 配置为向所述目标施加电压的电源单元; 构造成防止从一个靶产生的颗粒粘附到另一个靶的快门; 屏蔽构件; 供氧单元，被配置为向安装在所述安装单元上的所述基板供给含氧气体; 以及控制单元，其被配置为执行向所述目标提供等离子体产生电压并溅射所述目标物并将所述含氧气体从所述供氧单元供应到所述基板。

    Method for manufacturing magnetoresistive element
    6.
    发明授权
    Method for manufacturing magnetoresistive element 有权

    公开(公告)号：US10566525B2

    公开(公告)日：2020-02-18

    申请号：US16008659

    申请日：2018-06-14

    Applicant: Tokyo Electron Limited

    Inventor： Hiroki Maehara ,  Naoki Watanabe ,  Kanto Nakamura

    IPC: H01L43/12 ,  H01L43/10

    Abstract: A method for manufacturing a magnetoresistive element, includes: a first step of preparing a wafer including a first ferromagnetic layer and a first oxide layer provided directly on the first ferromagnetic layer; a second step of forming, after the first step, a second ferromagnetic layer directly on the first oxide layer; a third step of forming, after the second step, an absorbing layer directly on the second ferromagnetic layer; and a fourth step of crystallizing, after the third step, the second ferromagnetic layer by heat treatment. The second ferromagnetic layer contains boron, and the absorbing layer contains a material for absorbing boron from the second ferromagnetic layer by the heat treatment in the fourth step.

    Film forming apparatus and film forming method
    9.
    发明授权
    Film forming apparatus and film forming method 有权
    成膜装置及成膜方法

    公开(公告)号：US09551060B2

    公开(公告)日：2017-01-24

    申请号：US14810239

    申请日：2015-07-27

    Applicant: Tokyo Electron Limited

    Inventor： Atsushi Gomi ,  Kanto Nakamura ,  Tooru Kitada ,  Yasunobu Suzuki ,  Shinji Furukawa

    IPC: C23C14/34 ,  H01J37/34 ,  C23C14/00 ,  H01J37/32 ,  C23C14/08 ,  C23C14/54

    CPC classification number: C23C14/0063 ,  C23C14/081 ,  C23C14/3464 ,  C23C14/3492 ,  C23C14/541 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/3405

    Abstract: A film forming apparatus, for forming a metal oxide film on an object, includes a holding unit and a heating unit. The holding unit includes a first heater and holds the object in a processing chamber. A first heater power supply supplies power to the first heater. A target electrode is electrically connected to a metal target provided above the holding unit. A sputtering power supply is electrically connected to the target electrode. An introduction mechanism supplies an oxygen gas toward the holding unit. The heating unit includes a second heater for heating the object and a moving mechanism for moving the second heater between a region in a first space disposed above the holding unit and a region in a second space separated from the first space. A second heater power supply supplies power to the second heater.

    Abstract translation: 用于在物体上形成金属氧化物膜的成膜装置包括保持单元和加热单元。 保持单元包括第一加热器并将物体保持在处理室中。 第一加热器电源向第一加热器供电。 目标电极与设置在保持单元上方的金属靶电连接。 溅射电源电连接到目标电极。 导入机构向保持单元供给氧气。 加热单元包括用于加热物体的第二加热器和用于在设置在保持单元上方的第一空间中的区域和与第一空间分离的第二空间中的区域之间移动第二加热器的移动机构。 第二加热器电源向第二加热器供电。

Patent Agency Ranking