Invention Grant
- Patent Title: Semiconductor memory device and fabrication method thereof
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Application No.: US17319106Application Date: 2021-05-13
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Publication No.: US11895927B2Publication Date: 2024-02-06
- Inventor: Chia-Chang Hsu , Tang-Chun Weng , Cheng-Yi Lin , Yung-Shen Chen , Chia-Hung Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2110446979.5 2021.04.25
- Main IPC: H10N50/80
- IPC: H10N50/80 ; H10B61/00 ; H10N50/01
Abstract:
A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.
Public/Granted literature
- US20220344579A1 SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2022-10-27
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