Invention Grant
- Patent Title: Method of determining defective die containing non-volatile memory cells
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Application No.: US17576754Application Date: 2022-01-14
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Publication No.: US12020762B2Publication Date: 2024-06-25
- Inventor: Yuri Tkachev , Jinho Kim , Cynthia Fung , Gilles Festes , Bernard Bertello , Parviz Ghazavi , Bruno Villard , Jean Francois Thiery , Catherine Decobert , Serguei Jourba , Fan Luo , Latt Tee , Nhan Do
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP (US)
- Main IPC: G11C29/50
- IPC: G11C29/50
Abstract:
A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RC1 for the memory cells and a first number N1 of the memory cells having the lowest read current RC1. A second read operation is performed to determine a second number N2 of the memory cells having a read current not exceeding a target read current RC2. The target read current RC2 is equal to the lowest read current RC1 plus a predetermined current value. The die is determined to be acceptable if the second number N2 is determined to exceed the first number N1 plus a predetermined number. The die is determined to be defective if the second number N2 is determined not to exceed the first number N1 plus the predetermined number.
Public/Granted literature
- US20230101585A1 Method of Determining Defective Die Containing Non-volatile Memory Cells Public/Granted day:2023-03-30
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