Invention Grant
- Patent Title: Ferroelectric capacitors and methods of fabrication
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Application No.: US16914140Application Date: 2020-06-26
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Publication No.: US12048165B2Publication Date: 2024-07-23
- Inventor: Nazila Haratipour , Sou-Chi Chang , Shriram Shivaraman , I-Cheng Tung , Tobias Brown-Heft , Devin R. Merrill , Che-Yun Lin , Seung Hoon Sung , Jack Kavalieros , Uygar Avci , Matthew V. Metz
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: H10B53/00
- IPC: H10B53/00 ; G11C11/22 ; H01G4/008 ; H01L27/08 ; H01L49/02 ; H10B53/10

Abstract:
An integrated circuit capacitor structure, includes a first electrode includes a cylindrical column, a ferroelectric layer around an exterior sidewall of the cylindrical column and a plurality of outer electrodes. The plurality of outer electrodes include a first outer electrode laterally adjacent to a first portion of an exterior of the ferroelectric layer and a second outer electrode laterally adjacent to a second portion of the exterior of the ferroelectric layer, wherein the second outer electrode is above the first outer electrode.
Public/Granted literature
- US20210408018A1 FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION Public/Granted day:2021-12-30
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