Invention Grant
- Patent Title: Method of depositing silicon film and film deposition apparatus
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Application No.: US17654628Application Date: 2022-03-14
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Publication No.: US12080552B2Publication Date: 2024-09-03
- Inventor: Tatsuya Miyahara , Yoshihiro Takezawa , Daisuke Suzuki , Hiroyuki Hayashi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP 21064987 2021.04.06
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/24 ; C23C16/52 ; C30B28/02
Abstract:
To provide a method of depositing a silicon film that can crystallize the silicon film at low temperature and in a short time, and also can deposit the silicon film with high flatness. A method of depositing a silicon film includes supplying a silicon-containing gas on a seed layer, depositing an amorphous silicon film on the seed layer, supplying chlorosilane gas to the amorphous silicon film, and crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film.
Public/Granted literature
- US20220319845A1 METHOD OF DEPOSITING SILICON FILM AND FILM DEPOSITION APPARATUS Public/Granted day:2022-10-06
Information query
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