公开(公告)号：US11658028B2

公开(公告)日：2023-05-23

申请号：US16539157

申请日：2019-08-13

申请人： TOKYO ELECTRON LIMITED

发明人： Rui Kanemura ,  Hiroyuki Hayashi

IPC分类号： H01L21/02 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/24 ,  C23C16/56 ,  C23C16/52

CPC分类号： H01L21/02532 ,  C23C16/24 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0262 ,  H01L21/02592 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/67069

摘要： A film forming method for forming a silicon film having a step coverage on a substrate having a recess in a surface of the substrate, the film forming method comprising: forming a silicon film such that a film thickness on an upper portion of a side wall of the recess is thicker than a film thickness on a lower portion of the side wall of the recess by supplying a silicon-containing gas to the substrate; and etching a portion of the silicon film conformally by supplying an etching gas to the substrate, wherein the act of forming the silicon film and the act of etching the portion of the silicon film are performed a number of times which is determined depending on the step coverage.

公开(公告)号：US11410847B2

公开(公告)日：2022-08-09

申请号：US16830835

申请日：2020-03-26

申请人： TOKYO ELECTRON LIMITED

发明人： Hiroyuki Hayashi ,  Sena Fujita ,  Keita Kumagai ,  Keisuke Fujita

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/46 ,  C23C16/455

摘要： There is provided a film forming method including: supplying a halogen-free silicon raw material gas and a halogen-containing silicon raw material gas into a processing container while lowering a temperature of a substrate accommodated in the processing container from a first temperature to a second temperature in a temperature lowering process; and supplying the halogen-free silicon raw material gas and the halogen-containing silicon raw material gas into the processing container while maintaining the temperature of the substrate at a third temperature in a temperature stabilizing process, that occurs after the temperature lowering process.

公开(公告)号：US11260433B2

公开(公告)日：2022-03-01

申请号：US16744637

申请日：2020-01-16

申请人： TOKYO ELECTRON LIMITED

发明人： Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi ,  Sena Fujita ,  Tatsuya Miyahara ,  Jyunji Ariga ,  Shinya Kikuchi

IPC分类号： B08B9/027 ,  B08B5/00 ,  H01L21/67

摘要： There is provided a cleaning method of a substrate processing apparatus comprising cleaning an inside of an exhaust pipe through which a gas of an inside of a processing container is exhausted. The cleaning the inside of the exhaust pipe includes: removing a deposit on a downstream side of an opening/closing valve in the exhaust pipe by supplying a first exhaust pipe cleaning gas containing fluorine to the downstream side of the opening/closing valve in the exhaust pipe in a state in which the opening/closing valve provided in a middle of the exhaust pipe is closed; and removing a deposit on an upstream side of the opening/closing valve in the exhaust pipe by supplying a second exhaust pipe cleaning gas not containing fluorine as a gas constituent element to the inside of the processing container in a state in which the opening/closing valve is opened.

公开(公告)号：US20190318945A1

公开(公告)日：2019-10-17

申请号：US16379990

申请日：2019-04-10

申请人： Tokyo Electron Limited

发明人： Satoshi Takagi ,  Hiroyuki Hayashi ,  Hsiulin Tsai

IPC分类号： H01L21/67

摘要： A heat treatment apparatus includes a processing container that accommodates a plurality of substrates, a gas supply unit that supplies a raw material gas into the processing container, an exhaust unit that exhausts the raw material gas in the processing container, and a heating unit that heats the plurality of substrates. The gas supply unit includes a gas supply pipe including: a first straight pipe portion that extends upward along a longitudinal direction of an inner wall surface of the processing container; a bent portion where a distal end side that extends above the first straight pipe portion is bent downward; a second straight pipe portion that extends downward from the bent portion; and a plurality of gas ejecting holes formed on the second straight pipe portion. The first straight pipe portion has a larger cross-sectional area than the second straight pipe portion.

公开(公告)号：US12080552B2

公开(公告)日：2024-09-03

申请号：US17654628

申请日：2022-03-14

申请人： Tokyo Electron Limited

发明人： Tatsuya Miyahara ,  Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi

IPC分类号： H01L21/02 ,  C23C16/24 ,  C23C16/52 ,  C30B28/02

CPC分类号： H01L21/02667 ,  C23C16/24 ,  C23C16/52 ,  C30B28/02 ,  H01L21/02532 ,  H01L21/02592

摘要： To provide a method of depositing a silicon film that can crystallize the silicon film at low temperature and in a short time, and also can deposit the silicon film with high flatness. A method of depositing a silicon film includes supplying a silicon-containing gas on a seed layer, depositing an amorphous silicon film on the seed layer, supplying chlorosilane gas to the amorphous silicon film, and crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film.

公开(公告)号：US11424143B2

公开(公告)日：2022-08-23

申请号：US16297858

申请日：2019-03-11

申请人： Tokyo Electron Limited

发明人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Hiroyuki Hayashi ,  Mitsuhiro Okada ,  Satoshi Takagi ,  Toshihiko Takahashi ,  Masafumi Shoji ,  Kazuya Kitamura

IPC分类号： H01L21/67 ,  H01L21/673

摘要： Provided is a heat insulation structure used for a vertical heat treatment apparatus that performs a heat treatment on a substrate. The vertical heat treatment apparatus includes: a processing container having a double tube structure including an inner tube and an outer tube closed upward, the processing container having an opening at a lower end thereof; a gas supply section and exhaust section provided on a lower side of the processing container; a lid configured to introduce or discharge the substrate into or from the opening and to open/close the opening; and a heating section provided to cover the processing container from an outside. The heat insulation structure is provided between the inner tube and the outer tube.

公开(公告)号：US10854449B2

公开(公告)日：2020-12-01

申请号：US16046222

申请日：2018-07-26

申请人： TOKYO ELECTRON LIMITED

发明人： Satoshi Takagi ,  Hiroyuki Hayashi ,  Hsiulin Tsai

IPC分类号： H01L21/02 ,  C23C16/52 ,  C23C16/40 ,  C23C16/455 ,  C23C16/04 ,  C23C16/02 ,  C23C16/24

摘要： A method of forming a silicon film in a recess formed in a target substrate includes: preparing a target substrate having a recess in which a plurality of different bases is exposed; forming an atomic layer seed on at least an inner surface of the recess by sequentially supplying a raw material gas adapted to the plurality of different bases and a reaction gas reacting with the raw material gas to the target substrate one or more times while heating the target substrate to a first temperature; and forming a silicon film on a surface of the atomic layer seed so as to fill the recess by supplying a first silicon raw material gas to the target substrate while heating the target substrate to a second temperature.

公开(公告)号：US20190287828A1

公开(公告)日：2019-09-19

申请号：US16297858

申请日：2019-03-11

申请人： Tokyo Electron Limited

发明人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Hiroyuki Hayashi ,  Mitsuhiro Okada ,  Satoshi Takagi ,  Toshihiko Takahashi ,  Masafumi Shoji ,  Kazuya Kitamura

IPC分类号： H01L21/67 ,  H01L21/673

摘要： Provided is a heat insulation structure used for a vertical heat treatment apparatus that performs a heat treatment on a substrate. The vertical heat treatment apparatus includes: a processing container having a double tube structure including an inner tube and an outer tube closed upward, the processing container having an opening at a lower end thereof; a gas supply section and exhaust section provided on a lower side of the processing container; a lid configured to introduce or discharge the substrate into or from the opening and to open/close the opening; and a heating section provided to cover the processing container from an outside. The heat insulation structure is provided between the inner tube and the outer tube.

公开(公告)号：US09758865B2

公开(公告)日：2017-09-12

申请号：US14447060

申请日：2014-07-30

申请人： TOKYO ELECTRON LIMITED

发明人： Kazuhide Hasebe ,  Kazuya Takahashi ,  Katsuhiko Komori ,  Yoshikazu Furusawa ,  Mitsuhiro Okada ,  Hiroyuki Hayashi ,  Akinobu Kakimoto

IPC分类号： C23C16/00 ,  C23C16/04 ,  C23C16/24 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

CPC分类号： C23C16/045 ,  C23C16/24 ,  H01L21/28556 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.

公开(公告)号：US11251034B2

公开(公告)日：2022-02-15

申请号：US16281418

申请日：2019-02-21

申请人： TOKYO ELECTRON LIMITED

发明人： Hiroyuki Hayashi ,  Rui Kanemura ,  Satoshi Takagi ,  Mitsuhiro Okada

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/24

摘要： There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.