公开(公告)号：US11587787B2

公开(公告)日：2023-02-21

申请号：US17132656

申请日：2020-12-23

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi ,  Yutaka Motoyama

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/306

Abstract: A film forming method includes: forming a laminated film, in which an interface layer, a bulk layer, and a surface layer are laminated in this order, on a base; and crystallizing the laminated film, wherein the bulk layer is formed of a film that is easier to crystallize than the interface layer in crystallizing the laminated film, and wherein the surface layer is formed of a film that is easier to crystallize than the bulk layer in crystallizing the laminated film.

公开(公告)号：US12080552B2

公开(公告)日：2024-09-03

申请号：US17654628

申请日：2022-03-14

Applicant: Tokyo Electron Limited

Inventor： Tatsuya Miyahara ,  Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/52 ,  C30B28/02

CPC classification number: H01L21/02667 ,  C23C16/24 ,  C23C16/52 ,  C30B28/02 ,  H01L21/02532 ,  H01L21/02592

Abstract: To provide a method of depositing a silicon film that can crystallize the silicon film at low temperature and in a short time, and also can deposit the silicon film with high flatness. A method of depositing a silicon film includes supplying a silicon-containing gas on a seed layer, depositing an amorphous silicon film on the seed layer, supplying chlorosilane gas to the amorphous silicon film, and crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film.

公开(公告)号：US11486043B2

公开(公告)日：2022-11-01

申请号：US16526088

申请日：2019-07-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro Takezawa ,  Shigeru Nakajima ,  Katsushige Harada ,  Yusuke Tachino

IPC: C23F4/02 ,  C23C8/80 ,  C23C8/06

Abstract: There is provided a metal contamination prevention method performed by passing a metal chloride gas through a metal component having a surface covered with an inactive film formed of a chromium oxide, the method including: generating a chromium chloride (III) hexahydrate by supplying a hydrochloric acid to the inactive film covering the surface of the metal component and allowing the chromium oxide to react with the hydrochloric acid; removing a chromium from the inactive film by evaporating the chromium chloride (III) hexahydrate; and covering a surface of the inactive film with a compound containing a metal contained in the metal chloride gas.

公开(公告)号：US12112947B2

公开(公告)日：2024-10-08

申请号：US17655247

申请日：2022-03-17

Applicant: Tokyo Electron Limited

Inventor： Tatsuya Miyahara ,  Daisuke Suzuki ,  Yoshihiro Takezawa ,  Yuki Tanabe

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/24 ,  C23C16/52 ,  C23C16/56

CPC classification number: H01L21/02667 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02645

Abstract: A method of crystallizing an amorphous silicon film includes depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film at a first temperature, and forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film at a second temperature higher than the first temperature.

公开(公告)号：US10734221B2

公开(公告)日：2020-08-04

申请号：US16028656

申请日：2018-07-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taiki Kato ,  Hisashi Higuchi ,  Kosuke Yamamoto ,  Ayuta Suzuki ,  Kazuyoshi Matsuzaki ,  Yuji Seshimo ,  Susumu Takada ,  Yoshihiro Takezawa

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/51 ,  H01L29/423 ,  C23C16/455 ,  C23C16/04 ,  C23C16/40 ,  H01L21/28 ,  H01L49/02 ,  H01L21/443

Abstract: A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H2O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H2O by reaction with the functional group; supplying an H2O removal gas containing alcohols or amines into the chamber to remove H2O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H2O removal gas.

公开(公告)号：US12252786B2

公开(公告)日：2025-03-18

申请号：US17753004

申请日：2020-08-06

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi ,  Tatsuya Miyahara ,  Keisuke Fujita ,  Masami Oikawa ,  Sena Fujita

IPC: B08B5/00 ,  B08B9/08 ,  B08B13/00 ,  C23C16/44 ,  H01L21/02

Abstract: A cleaning method according to an aspect of the present disclosure includes: supplying a halogen-containing gas that does not contain fluorine to an interior of a processing container that is capable of being exhausted via an exhaust pipe to perform a cleaning; and supplying a fluorine-containing gas to at least one of the interior of the processing container and an interior of the exhaust pipe to perform the cleaning after the supplying the halogen-containing gas to perform the cleaning.

公开(公告)号：US12027384B2

公开(公告)日：2024-07-02

申请号：US17450327

申请日：2021-10-08

Applicant: Tokyo Electron Limited

Inventor： Yutaka Motoyama ,  Yoshihiro Takezawa

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/677

CPC classification number: H01L21/67098 ,  H01L21/02554 ,  H01L21/67757

Abstract: A heat treatment apparatus for applying a heat treatment to a plurality of substrates including a product substrate and a dummy substrate includes: a process container configured to accommodate the plurality of substrates; a storage container provided outside the process container and configured to store the dummy substrate; and an oxidation mechanism configured to oxidize the dummy substrate stored in the storage container.

公开(公告)号：US11749530B2

公开(公告)日：2023-09-05

申请号：US17304116

申请日：2021-06-15

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Takezawa ,  Masahisa Watanabe

IPC: H01L21/311 ,  H01L21/306 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/31111 ,  H01L21/02236 ,  H01L21/30604 ,  H01L21/67063

Abstract: A method of removing a phosphorus-doped silicon film doped with phosphorus, includes: forming a silicon oxide film by oxidizing the phosphorus-doped silicon film in a substrate including the phosphorus-doped silicon film and an undoped silicon film which is not been doped with the phosphorus, wherein at least the phosphorus-doped silicon film is exposed to a surface of the substrate; and selectively etching and removing the silicon oxide film from the silicon oxide film and the undoped silicon film.

公开(公告)号：US11260433B2

公开(公告)日：2022-03-01

申请号：US16744637

申请日：2020-01-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi ,  Sena Fujita ,  Tatsuya Miyahara ,  Jyunji Ariga ,  Shinya Kikuchi

IPC: B08B9/027 ,  B08B5/00 ,  H01L21/67

Abstract: There is provided a cleaning method of a substrate processing apparatus comprising cleaning an inside of an exhaust pipe through which a gas of an inside of a processing container is exhausted. The cleaning the inside of the exhaust pipe includes: removing a deposit on a downstream side of an opening/closing valve in the exhaust pipe by supplying a first exhaust pipe cleaning gas containing fluorine to the downstream side of the opening/closing valve in the exhaust pipe in a state in which the opening/closing valve provided in a middle of the exhaust pipe is closed; and removing a deposit on an upstream side of the opening/closing valve in the exhaust pipe by supplying a second exhaust pipe cleaning gas not containing fluorine as a gas constituent element to the inside of the processing container in a state in which the opening/closing valve is opened.

公开(公告)号：US11047044B2

公开(公告)日：2021-06-29

申请号：US15841084

申请日：2017-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro Takezawa ,  Kuniyasu Sakashita ,  Shigeru Nakajima

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/44 ,  H01L21/673 ,  H01L21/02 ,  C23C16/40 ,  H01L21/67

Abstract: A film forming apparatus includes: a substrate holding member for vertically holding target substrates at predetermined intervals in multiple stages; a process vessel for accommodating the substrate holding member; a processing gas introduction member each having gas discharge holes which discharge a processing gas for film formation in a direction parallel to each target substrate and introduce the processing gas into the process vessel; an exhaust mechanism for exhausting the interior of the process vessel; and a plurality of gas flow adjustment members installed to face the target substrates, respectively. Each of the gas flow adjustment members adjusts a gas flow of the processing gas discharged horizontally above each of the target substrates from the gas discharge holes of the processing gas introduction member, to be directed from above the respective target substrate located below the respective gas flow adjustment member toward the surface of the respective target substrate.