公开(公告)号：US11967505B2

公开(公告)日：2024-04-23

申请号：US18137572

申请日：2023-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Masashi Oota ,  Yoichi Kurosawa ,  Noritaka Ishihara

IPC: H01L29/04 ,  B82Y30/00 ,  C01G15/00 ,  C23C14/08 ,  C23C14/34 ,  C30B1/04 ,  C30B23/08 ,  C30B28/02 ,  C30B29/22 ,  C30B29/68 ,  H01J37/34 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/02631 ,  B82Y30/00 ,  C01G15/006 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  C30B1/04 ,  C30B23/08 ,  C30B28/02 ,  C30B29/22 ,  C30B29/68 ,  H01J37/3429 ,  H01L21/02565 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  C01P2002/32 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  H01J2237/081 ,  H01J2237/3322 ,  H01J2237/3323

Abstract: A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

公开(公告)号：US11567223B2

公开(公告)日：2023-01-31

申请号：US17454688

申请日：2021-11-12

Applicant: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES

Inventor： Dongzhou Ding ,  Shuwen Zhao ,  Fan Yang ,  Junjie Shi ,  Chen Yuan ,  Linwei Wang ,  Zhongjun Xue

IPC: G01T1/20 ,  G01T1/202 ,  C04B35/16 ,  C30B28/02 ,  C30B29/22

Abstract: The invention relates to a scintillation material of rare earth orthosilicate doped with a strong electron-affinitive element and its preparation method and application thereof. The chemical formula of the scintillation material of rare earth orthosilicate doped with the strong electron-affinitive element is: RE2(1−x−y+δ/2)Ce2xM(2y−δ)Si(1−δ)MδO5. In the formula, RE is rare earth ions and M is strong electron-affinitive doping elements; the value of x is 0

公开(公告)号：US11133502B2

公开(公告)日：2021-09-28

申请号：US16170581

申请日：2018-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyunghoon Cho ,  Seunghoon Nam ,  Hwiyeol Park ,  Hojung Yang ,  Huisu Jeong ,  Jin S. Heo

IPC: H01M4/525 ,  H01M4/131 ,  H01M4/04 ,  H01M4/505 ,  H01M4/1391 ,  C30B28/02 ,  C30B29/22 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/38 ,  H01M10/0525 ,  H01M10/0562 ,  H01M10/052 ,  H01M10/0583 ,  H01M4/02

Abstract: A cathode includes a cathode collector layer, and a cathode active material layer on a surface of the cathode collector layer. The cathode active material layer includes a sintered polycrystalline material having a plurality of crystal grains of a lithium-based oxide, and each of the plurality of crystal grains includes a seed template, and a matrix crystal around the seed template, where the seed template is a single crystal and having a shape of a plate.

公开(公告)号：US10147944B2

公开(公告)日：2018-12-04

申请号：US15047740

申请日：2016-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyunghoon Cho ,  Seunghoon Nam ,  Hwiyeol Park ,  Hojung Yang ,  Huisu Jeong ,  Jin S. Heo

IPC: H01M4/525 ,  H01M4/131 ,  H01M4/04 ,  H01M4/1391 ,  H01M4/505 ,  C30B28/02 ,  C30B29/22 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/38 ,  H01M10/0525 ,  H01M10/0562 ,  H01M10/052 ,  H01M10/0583 ,  H01M4/02

Abstract: A cathode includes a cathode collector layer, and a cathode active material layer on a surface of the cathode collector layer. The cathode active material layer includes a sintered polycrystalline material having a plurality of crystal grains of a lithium-based oxide, and each of the plurality of crystal grains includes a seed template, and a matrix crystal around the seed template, where the seed template is a single crystal and having a shape of a plate.

公开(公告)号：US09932689B2

公开(公告)日：2018-04-03

申请号：US14155546

申请日：2014-01-15

Applicant: Massachusetts Institute of Technology

Inventor： Emanuel M Sachs ,  James G. Serdy ,  Eerik T. Hantsoo

IPC: C30B13/00 ,  C30B1/02 ,  C30B28/02 ,  C30B29/06 ,  H01L21/02 ,  H01L23/31 ,  H01L29/04

CPC classification number: C30B13/00 ,  C30B1/02 ,  C30B28/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02667 ,  H01L23/3171 ,  H01L29/04 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. At least one support element supports the wafer at the time the capsule is provided and blocks only minimal surface area from contact with the film forming atmosphere. There may be a plurality of support elements, or a surface may provide such support. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. After recrystallization, the capsule is removed.

公开(公告)号：US20170114473A1

公开(公告)日：2017-04-27

申请号：US15290092

申请日：2016-10-11

Applicant: Xianfeng CHEN

Inventor： Xianfeng CHEN

IPC: C30B1/02 ,  H01L41/39 ,  C30B29/32 ,  C30B28/02 ,  C30B30/02 ,  C30B1/08

CPC classification number: C30B1/023 ,  C30B1/08 ,  C30B28/02 ,  C30B29/32 ,  C30B30/02 ,  H01L41/1876 ,  H01L41/257 ,  H01L41/318 ,  H01L41/39

Abstract: A polarizing apparatus includes an electromagnetic wave irradiator to irradiate a target film with an electromagnetic wave to heat the target film; and an electric charge generator to apply an electric field to the target film.

公开(公告)号：US08506703B2

公开(公告)日：2013-08-13

申请号：US12359687

申请日：2009-01-26

Applicant: Young-sang Cho ,  Mi-jeong Song ,  Hong-seok Lee

Inventor： Young-sang Cho ,  Mi-jeong Song ,  Hong-seok Lee

IPC: C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B28/02

CPC classification number: C30B29/68

Abstract: A method for forming colloidal photonic crystals comprises; surrounding an outer circumference of a cylinder with a flexible substrate, spacing the cylinder a predetermined distance from a panel coated with a colloidal solution, and rotating the cylinder to form colloidal photonic crystals on the flexible panel.

Abstract translation: 形成胶体光子晶体的方法包括： 围绕具有柔性基板的圆筒的外周，将圆筒与涂有胶体溶液的面板隔开预定距离，并旋转圆筒以在柔性面板上形成胶体光子晶体。

公开(公告)号：US07803340B2

公开(公告)日：2010-09-28

申请号：US11663586

申请日：2005-09-22

Applicant: Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki ,  Takashi Kawasaki ,  Masahiro Ibukiyama

Inventor： Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki ,  Takashi Kawasaki ,  Masahiro Ibukiyama

IPC: C01B15/14 ,  C01B33/20 ,  C01B33/12 ,  C01B25/00 ,  C01B33/00 ,  C01B35/00 ,  C01B15/00 ,  C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B28/02 ,  C07C1/00 ,  C07C2/00 ,  C07C4/00 ,  C07C5/00 ,  C07C6/00 ,  B01J19/12

CPC classification number: C01B33/113 ,  B82Y30/00 ,  C01P2004/64 ,  C09C1/30 ,  C09C1/3009 ,  C09K11/592

Abstract: Crystalline silicon particles of nanometer order usable as a semiconductor element are provided by a method for producing SiOx particles, comprising irradiating SiOx (X is 0.5 or more and less than 2.0) particles each including therein an amorphous silicon particle having a particle diameter of 0.5 to 5 nm with light, and preferably a laser beam, to produce SiOx (X is 0.5 or more and less than 2.0) particles each including therein a crystalline silicon particle having a particle diameter of 1 to 10 nm.

Abstract translation: 通过制造SiO x粒子的方法提供可用作半导体元件的结晶硅粒子，其包括将包含粒径为0.5的非晶硅粒子的SiOx（X为0.5以上且小于等于2.0）的粒子照射到 5nm，优选为激光束，生成SiO x（X为0.5以上且小于2.0）的粒子，各粒径粒径为1〜10nm的结晶硅粒子。

公开(公告)号：US20070044706A1

公开(公告)日：2007-03-01

申请号：US11509735

申请日：2006-08-25

Applicant: Sung-Kwan Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Yong-Hoon Son

Inventor： Sung-Kwan Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Yong-Hoon Son

IPC: C30B1/00 ,  C30B28/02 ,  C30B3/00 ,  C30B5/00

CPC classification number: C30B23/02 ,  C30B23/025 ,  C30B25/18 ,  C30B29/06 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02658 ,  H01L21/28525

Abstract: In a method of forming a single crystalline structure and a method of manufacturing a semiconductor device by using the method of forming the single crystalline structure, a single crystalline seed having elements combining with oxygen to form a network former capable of being easily connected to a network of oxide glass is formed. The single crystalline seed is epitaxially grown to form a single crystalline structure.

Abstract translation: 在通过使用形成单晶结构的方法形成单晶结构的方法和制造半导体器件的方法中，具有与氧结合的元件以形成能够容易地连接到网络的网络形成器的单晶种子 形成氧化物玻璃。 将单晶种子外延生长以形成单晶结构。

公开(公告)号：US20060174818A1

公开(公告)日：2006-08-10

申请号：US11371442

申请日：2006-03-09

Applicant: Eugene Fitzgerald ,  Richard Westhoff ,  Matthew Currie ,  Christopher Vineis ,  Thomas Langdo

Inventor： Eugene Fitzgerald ,  Richard Westhoff ,  Matthew Currie ,  Christopher Vineis ,  Thomas Langdo

IPC: C30B1/00 ,  C30B28/02 ,  C30B3/00 ,  C30B5/00

CPC classification number: C30B29/52 ,  C23C16/029 ,  C23C16/22 ,  C23C16/4401 ,  C30B25/02 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262

Abstract: A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.