公开(公告)号：US09824919B2

公开(公告)日：2017-11-21

申请号：US15450595

申请日：2017-03-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoichiro Chiba ,  Daisuke Suzuki ,  Atsushi Endo

IPC: H01L21/4763 ,  H01L21/768 ,  C23C16/24 ,  C23C16/06 ,  C23C16/02 ,  C23C16/46 ,  C23C16/458 ,  C23C16/455 ,  C23C16/04 ,  C23C16/44

CPC classification number: H01L21/76879 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/06 ,  C23C16/24 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76876

Abstract: There is provided a method of filling a recess with a germanium-based film composed of germanium or silicon germanium in a substrate to be processed on which an insulating film having the recess formed therein is formed, the method including: forming a silicon film on a surface of the insulating film at a thickness as not to completely fill the recess; subsequently, etching the silicon film such that the silicon film remains only in a bottom portion of the recess; and subsequently, selectively growing the germanium-based film composed of germanium or silicon germanium on the silicon film remaining in the bottom portion of the recess and selectively filling the recess with the germanium-based film.

公开(公告)号：US09799577B2

公开(公告)日：2017-10-24

申请号：US15342242

申请日：2016-11-03

Applicant: Tokyo Electron Limited

Inventor： Yuichi Takenaga ,  Daisuke Suzuki ,  Katsuhiko Komori

IPC: H01L21/24 ,  H01L21/66 ,  H01L21/3215 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L22/26 ,  H01L21/2252 ,  H01L21/32155 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67253 ,  H01L22/10 ,  H01L22/20

Abstract: A heat treatment system includes a heat treatment condition storing unit that stores a heat treatment condition with respect to a doping processing and a diffusion processing; a model storing unit that stores a model representing a relationship between a change of the heat treatment condition and a change of an impurity concentration in an impurity-doped thin film; a heat treatment unit that forms the impurity-doped thin film under the heat treatment condition; a calculating unit that calculates a heat treatment condition of the doping processing and the diffusion processing that causes the impurity concentration in the impurity-doped film to be included within the predetermined range, based on the impurity concentration in the impurity-doped thin film and the model; and an adjusting unit that adjusts the impurity concentration in the impurity-doped thin film to be included within the predetermined range.

公开(公告)号：US09797067B2

公开(公告)日：2017-10-24

申请号：US14197359

申请日：2014-03-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Suzuki ,  Akinobu Kakimoto ,  Satoshi Onodera

IPC: C30B25/16 ,  C30B29/06 ,  H01L21/02

CPC classification number: C30B25/16 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639

Abstract: A selective epitaxial growth method includes preparing a target object including a single crystal substrate in which an epitaxial growth region is partitioned by a suppression film; and growing the epitaxial layer on the epitaxial growth region of the target object until a predetermined film thickness is obtained. The growing the epitaxial layer includes first source gas supply process of supplying a source gas onto the target object under a first pressure to grow a first epitaxial layer on the epitaxial growth region, first removing process of removing deposits on the suppression film, second source gas supply process of supplying the source gas onto the target object under a second pressure higher than the first pressure, and second removing process of removing the deposits on the suppression film. The second source gas supply process and the second removing process are repeated until the predetermined film thickness is obtained.

公开(公告)号：US12080552B2

公开(公告)日：2024-09-03

申请号：US17654628

申请日：2022-03-14

Applicant: Tokyo Electron Limited

Inventor： Tatsuya Miyahara ,  Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/52 ,  C30B28/02

CPC classification number: H01L21/02667 ,  C23C16/24 ,  C23C16/52 ,  C30B28/02 ,  H01L21/02532 ,  H01L21/02592

Abstract: To provide a method of depositing a silicon film that can crystallize the silicon film at low temperature and in a short time, and also can deposit the silicon film with high flatness. A method of depositing a silicon film includes supplying a silicon-containing gas on a seed layer, depositing an amorphous silicon film on the seed layer, supplying chlorosilane gas to the amorphous silicon film, and crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film.

公开(公告)号：US20200312677A1

公开(公告)日：2020-10-01

申请号：US16821133

申请日：2020-03-17

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Keita KUMAGAI ,  Keisuke FUJITA ,  Hiroyuki HAYASHI ,  Daisuke Suzuki ,  Rui KANEMURA ,  Sena FUJITA

IPC: H01L21/67 ,  H01L21/04 ,  H01L21/768

Abstract: A substrate processing apparatus includes a processing container configured to accommodate a plurality of substrates therein, a gas supply configured to supply a first raw material gas of a compound containing Si or Ge and H and a second raw material gas of a compound containing Si or Ge and a halogen element into the processing container; and an exhauster configured to evacuate an inside of the processing container, wherein the gas supply has a dispersion nozzle provided with a plurality of gas holes for discharging the first raw material gas and the second raw material gas, and the substrate processing apparatus further comprises a heater configured to heat the first raw material gas and the second raw material gas in the dispersion nozzle.

公开(公告)号：US10312078B2

公开(公告)日：2019-06-04

申请号：US15466264

申请日：2017-03-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki Murakami ,  Daisuke Suzuki ,  Takahiro Miyahara

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/46 ,  C23C16/02 ,  C23C16/04

Abstract: There is provided a nitride film forming method which includes: performing a pretreatment in which a chlorine-containing gas is supplied while heating a substrate to be processed having a first base film and a second base film formed on the substrate to a predetermined temperature, and is adsorbed onto a surface of the first base film and a surface of the second base film; and forming a nitride film on the first base film and the second base film subjected to the pretreatment, by an ALD method or a CVD method, using a raw material gas and a nitriding gas, while heating the substrate to be processed to a predetermined temperature.

公开(公告)号：US09972486B2

公开(公告)日：2018-05-15

申请号：US15465789

申请日：2017-03-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki Murakami ,  Takahiro Miyahara ,  Daisuke Suzuki

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/52 ,  H01L21/02211 ,  H01L21/0228

Abstract: There is provided a method for forming a nitride film on a substrate to be processed by a thermal ALD which repeats: supplying a film forming raw material gas to the substrate to be processed while heating the substrate to be processed to a predetermined temperature; and supplying a nitriding gas to the substrate to be processed, the nitride film forming method comprises supplying a chlorine-containing gas to the substrate to be processed after the supplying the film forming raw material gas.

公开(公告)号：US09966256B2

公开(公告)日：2018-05-08

申请号：US14844193

申请日：2015-09-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi Takagi ,  Kazuya Takahashi ,  Hiroki Murakami ,  Daisuke Suzuki

IPC: C23C16/00 ,  H01L21/02 ,  C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C30B1/02 ,  C30B1/04 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52

CPC classification number: H01L21/02532 ,  C23C16/02 ,  C23C16/22 ,  C23C16/24 ,  C30B1/026 ,  C30B1/04 ,  C30B29/08 ,  C30B29/52 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/02669

Abstract: There is provided a method of forming a film on a surface to be processed of a workpiece, the method including: accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece.

公开(公告)号：US09653555B2

公开(公告)日：2017-05-16

申请号：US15041144

申请日：2016-02-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Youichirou Chiba ,  Takumi Yamada ,  Daisuke Suzuki

IPC: H01L21/20 ,  H01L29/40 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/3215

CPC classification number: H01L29/401 ,  C30B25/00 ,  H01L21/223 ,  H01L21/32055 ,  H01L21/32135 ,  H01L21/32155 ,  H01L21/3247

Abstract: A method of filling a depression of a workpiece is provided. The depression passes through an insulating film and extends up to an inside of a semiconductor substrate. The method includes forming a first thin film made of a semiconductor material along a wall surface which defines the depression, performing gas phase doping on the first thin film, by annealing the workpiece within a vessel, forming an epitaxial region from the semiconductor material of the first thin film along a surface of the semiconductor substrate which defines the depression, without moving the first thin film with the gas phase doping performed, forming a second thin film made of a semiconductor material along the wall surface which defines the depression; and by annealing the workpiece within the vessel, further forming an epitaxial region from the semiconductor material of the second thin film moved toward a bottom of the depression.

公开(公告)号：US12112947B2

公开(公告)日：2024-10-08

申请号：US17655247

申请日：2022-03-17

Applicant: Tokyo Electron Limited

Inventor： Tatsuya Miyahara ,  Daisuke Suzuki ,  Yoshihiro Takezawa ,  Yuki Tanabe

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/24 ,  C23C16/52 ,  C23C16/56

CPC classification number: H01L21/02667 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02645

Abstract: A method of crystallizing an amorphous silicon film includes depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film at a first temperature, and forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film at a second temperature higher than the first temperature.