Invention Grant
- Patent Title: System and method for monitoring and controlling extreme ultraviolet photolithography processes
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Application No.: US17150685Application Date: 2021-01-15
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Publication No.: US12085860B2Publication Date: 2024-09-10
- Inventor: Tai-Yu Chen , Heng-Hsin Liu , Li-Jui Chen , Shang-Chieh Chien
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G21K1/06 ; H05G2/00

Abstract:
A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. An array of sensors sense the extreme ultraviolet radiation and charged particles emitted by the droplets. A control system analyses sensor signals from the sensors and adjusts plasma generation parameters responsive to the sensor signals.
Public/Granted literature
- US20220229371A1 SYSTEM AND METHOD FOR MONITORING AND CONTROLLING EXTREME ULTRAVIOLET PHOTOLITHOGRAPHY PROCESSES Public/Granted day:2022-07-21
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