Invention Grant
- Patent Title: Gallium nitride integrated circuits including non-gold-based metallic materials
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Application No.: US18148982Application Date: 2022-12-30
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Publication No.: US12087713B2Publication Date: 2024-09-10
- Inventor: Daniel Piedra , James G. Fiorenza , Puneet Srivastava , Andrew Proudman , Kenneth Flanders , Denis Michael Murphy , Leslie P. Green , Peter R. Stubler
- Applicant: Analog Devices, Inc.
- Applicant Address: US MA Wilmington
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Wilmington
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L21/285 ; H01L21/8252 ; H01L23/48 ; H01L27/06 ; H01L29/20 ; H01L29/205 ; H01L29/45 ; H01L29/66 ; H01L29/778 ; H01L49/02 ; H01L23/532 ; H01L29/417
Abstract:
Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.
Public/Granted literature
- US20230154875A1 GALLIUM NITRIDE INTEGRATED CIRCUITS Public/Granted day:2023-05-18
Information query
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