公开(公告)号：US20240421217A1

公开(公告)日：2024-12-19

申请号：US18209977

申请日：2023-06-14

Applicant: Analog Devices, Inc.

Inventor： James G. Fiorenza ,  Daniel Piedra ,  Justin Scott Reiter ,  Michael Gurr

IPC: H01L29/778 ,  H01L23/373 ,  H01L29/20 ,  H01L29/66

Abstract: Techniques that separate the heat generation from the active device and that add a thermal heat shield layer between the heat generation and the active device to reduce the channel temperature in the areas that determine the reliability of a semiconductor device.

公开(公告)号：US20230122090A1

公开(公告)日：2023-04-20

申请号：US17504391

申请日：2021-10-18

Applicant: Analog Devices, Inc.

Inventor： James G. Fiorenza ,  Daniel Piedra

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/66

Abstract: Electric field management techniques in GaN based semiconductors that utilize patterned regions of differing conductivity under the active GaN device, such as a GaN high electron mobility transistor (HEMT), are described. As an example, a patterned layer of oxidized silicon can be formed superjacent a layer of silicon dioxide during or prior to the heteroepitaxy of GaN or another semiconductor material. These techniques can be useful for back-side electric field management because a silicon layer, for example, can be made conductive to act as a back-side field plate.

公开(公告)号：US20210091061A1

公开(公告)日：2021-03-25

申请号：US17020189

申请日：2020-09-14

Applicant: Analog Devices, Inc.

Inventor： James G. Fiorenza ,  Puneet Srivastava ,  Daniel Piedra

IPC: H01L25/18 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00

Abstract: A hybrid silicon carbide (SiC) device includes a first device structure having a first substrate comprising SiC of a first conductivity type and a first SiC layer of the first conductivity type, where the first SiC layer is formed on a face of the first substrate. The first device structure also includes a second SiC layer of a second conductivity type that is formed on a face of the first SiC layer and a first contact region of the first conductivity type, where the first contact region traverses the second SiC layer and contacts the first SiC. The device also includes a second device structure that is bonded to the first device structure. The second device structure includes a switching device formed on a second substrate and a second contact region that traverses a first terminal region of the switching device and contacts the first contact region.

公开(公告)号：US20250098200A1

公开(公告)日：2025-03-20

申请号：US18940279

申请日：2024-11-07

Applicant: Analog Devices, Inc.

Inventor： James G. Fiorenza ,  Puneet Srivastava ,  Daniel Piedra

IPC: H01L29/778 ,  H01L21/265 ,  H01L21/266 ,  H01L27/088 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: An enhancement mode compound semiconductor field-effect transistor (FET) includes a source, a drain, and a gate located therebetween. The transistor further includes a first gallium nitride-based hetero-interface located under the gate and a buried region, located under the first hetero-interface, the buried p-type region configured to determine an enhancement mode FET turn-on threshold voltage to permit current flow between the source and the drain.

公开(公告)号：US12230699B2

公开(公告)日：2025-02-18

申请号：US17067988

申请日：2020-10-12

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava

IPC: H01L29/778 ,  H01L29/10 ,  H01L29/16 ,  H01L29/20 ,  H01L29/66

Abstract: Integrated circuits can include semiconductor devices with back-side field plates. The semiconductor devices can be formed on substrates that have conductive layers located within the substrates. The conductive layers can include at least one of a conducting material or a semi-conducting material that modifies an electric field produced by the semiconductor devices. The semiconductor devices can include one or more semiconductor layers that include one or more materials having a compound material that includes at least one Group 13 element and at least one Group 15 element.

公开(公告)号：US20240213239A1

公开(公告)日：2024-06-27

申请号：US18069777

申请日：2022-12-21

Applicant: Analog Devices, Inc.

Inventor： James G. Fiorenza ,  Daniel Piedra

IPC: H01L27/02 ,  H01L29/20 ,  H01L29/40 ,  H01L29/45 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L27/0255 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/45 ,  H01L29/66462 ,  H01L29/7786

Abstract: Techniques to integrate a p-n diode with a GaN HEMT, such as in a silicon carbide (SiC) substrate. The p-n diode provides avalanche robustness to the device and over voltage protection to the transistor.

公开(公告)号：US20230154875A1

公开(公告)日：2023-05-18

申请号：US18148982

申请日：2022-12-30

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L23/48 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/778

CPC classification number: H01L23/66 ,  H01L21/8252 ,  H01L21/28575 ,  H01L23/481 ,  H01L27/0605 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/205 ,  H01L29/452 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/66462 ,  H01L23/53214 ,  H01L2223/6616 ,  H01L2223/6683

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20230133481A1

公开(公告)日：2023-05-04

申请号：US18148996

申请日：2022-12-30

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L23/48 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/778

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US12261134B2

公开(公告)日：2025-03-25

申请号：US18148996

申请日：2022-12-30

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L21/285 ,  H01L21/8252 ,  H01L23/48 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L29/66 ,  H01L29/778 ,  H01L49/02 ,  H01L23/532 ,  H01L29/417

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20240282848A1

公开(公告)日：2024-08-22

申请号：US18560066

申请日：2021-12-08

Applicant: Analog Devices, Inc.

Inventor： James G. Fiorenza ,  Christopher John Day ,  Guanghai Ding ,  Daniel Piedra

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/40 ,  H03K17/687

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/407 ,  H03K17/687

Abstract: A semiconductor device including a transistor having a threshold voltage for switching the transistor from a first conductive state to a second conductive state. The transistor includes a first region formed by a first compound semiconductor material and a second region formed by a second compound semiconductor material, where the second region overlying the first region and forming a two-dimensional electron gas (2DEG) at a junction with the first region. The transistor further includes a buried field plate disposed proximate to the first region so that the 2DEG is interposed between the buried field plate and the second region. The semiconductor device further includes a control circuit configured to adjust the threshold voltage of the transistor by providing a bias voltage to the buried field plate responsive to an input signal received at the transistor.