公开(公告)号：US12087713B2

公开(公告)日：2024-09-10

申请号：US18148982

申请日：2022-12-30

申请人： Analog Devices, Inc.

发明人： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC分类号： H01L23/66 ,  H01L21/285 ,  H01L21/8252 ,  H01L23/48 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L29/66 ,  H01L29/778 ,  H01L49/02 ,  H01L23/532 ,  H01L29/417

CPC分类号： H01L23/66 ,  H01L21/28575 ,  H01L21/8252 ,  H01L23/481 ,  H01L27/0605 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L23/53214 ,  H01L29/4175 ,  H01L2223/6616 ,  H01L2223/6683 ,  H01L2924/1423

摘要： Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US11569182B2

公开(公告)日：2023-01-31

申请号：US17061075

申请日：2020-10-01

申请人： Analog Devices, Inc.

发明人： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC分类号： H01L23/66 ,  H01L27/06 ,  H01L49/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L23/48 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/778 ,  H01L23/532 ,  H01L29/417

摘要： Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20230154875A1

公开(公告)日：2023-05-18

申请号：US18148982

申请日：2022-12-30

申请人： Analog Devices, Inc.

发明人： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC分类号： H01L23/66 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L23/48 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/778

CPC分类号： H01L23/66 ,  H01L21/8252 ,  H01L21/28575 ,  H01L23/481 ,  H01L27/0605 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/205 ,  H01L29/452 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/66462 ,  H01L23/53214 ,  H01L2223/6616 ,  H01L2223/6683

摘要： Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20230133481A1

公开(公告)日：2023-05-04

申请号：US18148996

申请日：2022-12-30

申请人： Analog Devices, Inc.

发明人： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC分类号： H01L23/66 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L23/48 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/778

摘要： Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.