公开(公告)号：US12087713B2

公开(公告)日：2024-09-10

申请号：US18148982

申请日：2022-12-30

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L21/285 ,  H01L21/8252 ,  H01L23/48 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L29/66 ,  H01L29/778 ,  H01L49/02 ,  H01L23/532 ,  H01L29/417

CPC classification number: H01L23/66 ,  H01L21/28575 ,  H01L21/8252 ,  H01L23/481 ,  H01L27/0605 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L23/53214 ,  H01L29/4175 ,  H01L2223/6616 ,  H01L2223/6683 ,  H01L2924/1423

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US12261134B2

公开(公告)日：2025-03-25

申请号：US18148996

申请日：2022-12-30

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L21/285 ,  H01L21/8252 ,  H01L23/48 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L29/66 ,  H01L29/778 ,  H01L49/02 ,  H01L23/532 ,  H01L29/417

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20240253979A1

公开(公告)日：2024-08-01

申请号：US18632802

申请日：2024-04-11

Applicant: Analog Devices, Inc.

Inventor： Xin Zhang ,  Christopher Needham ,  Andrew Proudman ,  Nikolay Pokrovskiy ,  George M. Molnar, II ,  Laura Cornelia Popa

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00325 ,  B81B7/0048 ,  B81C1/00063 ,  B81B2203/01

Abstract: A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.

公开(公告)号：US11569182B2

公开(公告)日：2023-01-31

申请号：US17061075

申请日：2020-10-01

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L27/06 ,  H01L49/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L23/48 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/778 ,  H01L23/532 ,  H01L29/417

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20210118871A1

公开(公告)日：2021-04-22

申请号：US17061075

申请日：2020-10-01

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter A. Stubler

IPC: H01L27/06 ,  H01L49/02 ,  H01L29/20 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/45 ,  H01L23/66 ,  H01L29/205 ,  H01L23/48 ,  H01L29/778

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20240300808A1

公开(公告)日：2024-09-12

申请号：US18596223

申请日：2024-03-05

Applicant: Analog Devices, Inc.

Inventor： Kemiao Jia ,  Gaurav Vohra ,  Xin Zhang ,  Christine H. Tsau ,  Chen Yang ,  Andrew Proudman ,  Matthew Kent Emsley ,  George M. Molnar, II ,  Nikolay Pokrovskiy ,  Ali Mohammed Shakir ,  Michael Judy

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00666 ,  B81B3/0072 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81C2201/0111 ,  B81C2201/019

Abstract: Described herein are manufacturing techniques for achieving stress isolation in microelectromechanical systems (MEMS) devices that involve isolation trenches formed from the backside of the substrate. The techniques described herein involve etching a trench in the bottom side of the substrate subsequent to forming a MEMS platform, and processing the MEMS platform to form a MEMS device on the top side of the substrate subsequent to etching the trench.

公开(公告)号：US11981560B2

公开(公告)日：2024-05-14

申请号：US17342442

申请日：2021-06-08

Applicant: Analog Devices, Inc.

Inventor： Xin Zhang ,  Christopher Needham ,  Andrew Proudman ,  Nikolay Pokrovskiy ,  George M. Molnar, II ,  Laura Cornelia Popa ,  Michael Judy

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00325 ,  B81B7/0048 ,  B81C1/00063 ,  B81B2203/01

Abstract: A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.

公开(公告)号：US20230154875A1

公开(公告)日：2023-05-18

申请号：US18148982

申请日：2022-12-30

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L23/48 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/778

CPC classification number: H01L23/66 ,  H01L21/8252 ,  H01L21/28575 ,  H01L23/481 ,  H01L27/0605 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/205 ,  H01L29/452 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/66462 ,  H01L23/53214 ,  H01L2223/6616 ,  H01L2223/6683

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20230133481A1

公开(公告)日：2023-05-04

申请号：US18148996

申请日：2022-12-30

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L23/48 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/778

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20210380403A1

公开(公告)日：2021-12-09

申请号：US17342442

申请日：2021-06-08

Applicant: Analog Devices, Inc.

Inventor： Xin Zhang ,  Christopher Needham ,  Andrew Proudman ,  Nikolay Pokrovskiy ,  George M. Molnar, II ,  Laura Cornelia Popa ,  Michael Judy

IPC: B81B7/00 ,  B81C1/00

Abstract: A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.