- 专利标题： Method of manufacturing semiconductor device
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申请号： US17445436申请日： 2021-08-19
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公开(公告)号： US12100616B2公开(公告)日： 2024-09-24
- 发明人: Kazuo Kibi , Shigetsugu Fujita , Kenji Suzuki , Mitsuhiro Okada
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Armstrong Teasdale LLP
- 优先权： JP 19027948 2019.02.20
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/027
摘要：
A method of manufacturing a semiconductor device includes: planarizing a surface of a substrate having a conductive material embedded in a first hole so as to expose the conductive material embedded in the first hole, wherein the first hole is formed in a region which is on an insulating film laminated on the substrate and is surrounded by a spacer film; laminating a mask film on the surface of the substrate; forming a second hole in the mask film such that at least a portion of an upper surface of the conductive material embedded in the first hole is exposed; embedding the conductive material in the second hole; and removing the mask film.
公开/授权文献
- US20210384071A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2021-12-09
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