公开(公告)号：US12100616B2

公开(公告)日：2024-09-24

申请号：US17445436

申请日：2021-08-19

Applicant: Tokyo Electron Limited

Inventor： Kazuo Kibi ,  Shigetsugu Fujita ,  Kenji Suzuki ,  Mitsuhiro Okada

IPC: H01L21/768 ,  H01L21/027

CPC classification number: H01L21/76805 ,  H01L21/0274 ,  H01L21/76877

Abstract: A method of manufacturing a semiconductor device includes: planarizing a surface of a substrate having a conductive material embedded in a first hole so as to expose the conductive material embedded in the first hole, wherein the first hole is formed in a region which is on an insulating film laminated on the substrate and is surrounded by a spacer film; laminating a mask film on the surface of the substrate; forming a second hole in the mask film such that at least a portion of an upper surface of the conductive material embedded in the first hole is exposed; embedding the conductive material in the second hole; and removing the mask film.

公开(公告)号：US09640404B2

公开(公告)日：2017-05-02

申请号：US15080281

申请日：2016-03-24

Applicant: Tokyo Electron Limited

Inventor： Kenji Suzuki ,  Koji Maekawa ,  Takanobu Hotta

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/46 ,  C23C16/08 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/46 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

Abstract: In a method of forming a tungsten film, an initial tungsten film and a main tungsten film are formed on an underlying film of a substrate. The initial tungsten film is formed on the underlying film by sequentially supplying a tungsten chloride gas and a reduction gas into a chamber while supplying a purging gas between the supplies of the tungsten chloride gas and the reduction gas, or by simultaneously supplying the tungsten chloride gas and the reduction gas. The main tungsten film is formed on the initial tungsten film by sequentially supplying the tungsten chloride gas and the reduction gas into the chamber while purging an inside of the chamber between the supplies of the tungsten chloride gas and the reduction gas. A supply amount of the tungsten chloride gas in forming the initial film is smaller than that in forming the main tungsten film.

公开(公告)号：US09313895B2

公开(公告)日：2016-04-12

申请号：US14098465

申请日：2013-12-05

Applicant: Tokyo Electron Limited

Inventor： Tadahiro Ishizaka ,  Kenji Suzuki ,  Atsushi Shimada

IPC: H05K3/10 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3105 ,  C23C14/35 ,  H05K1/03

CPC classification number: H05K3/107 ,  C23C14/358 ,  H01L21/02063 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K2201/0338 ,  H01L2924/00

Abstract: There is provided a Cu wiring forming method for forming a Cu wiring by filling Cu in a recess, which is formed in a predetermined pattern in a Si-containing film of a substrate. The Cu wiring forming method includes forming a Mn film, which becomes a self-aligned barrier film by reaction with an underlying base, at least on a surface of the recess by chemical vapor deposition, forming a Cu film by a physical vapor deposition to fill the recess with the Cu film, and forming a Cu wiring in the recess by polishing the entire surface of the substrate by a chemical mechanical polishing.

Abstract translation: 提供了一种用于通过在基板的含Si膜中以预定图案形成的凹部中填充Cu来形成Cu布线的Cu布线形成方法。 Cu布线形成方法包括通过化学气相沉积在至少在凹部的表面上形成通过与下面的基底反应而成为自对准阻挡膜的Mn膜，通过物理气相沉积形成Cu膜以填充 具有Cu膜的凹部，并且通过化学机械抛光对基板的整个表面进行抛光来在凹部中形成Cu布线。

公开(公告)号：US20140377947A1

公开(公告)日：2014-12-25

申请号：US14374879

申请日：2013-01-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenji Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  C23C16/0272 ,  C23C16/16 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: When a recess is formed in a SiCOH film, C is removed from the film to form a damage layer. If the damage layer is removed by hydrofluoric acid or the like, the surface becomes hydrophobic. By supplying a boron compound gas, a silicon compound gas or a gas containing trimethyl aluminum to the SiCOH film, B, Si or Al is adsorbed on the SiCOH film. These atoms bond with Ru and a Ru film is easily formed on the SiCOH film. The Ru film is formed using, for example, Ru3(CO)12 gas and CO gas. Copper is filled in the recess and an upper side wiring structure is formed by carrying out CMP processing.

Abstract translation: 当在SiCOH膜中形成凹部时，从膜中除去C以形成损伤层。 如果通过氢氟酸等去除损伤层，则表面变得疏水。 通过供给硼化合物气体，硅化合物气体或含有三甲基铝的气体到SiCOH膜，B，Si或Al被吸附在SiCOH膜上。 这些原子与Ru结合，容易在SiCOH膜上形成Ru膜。 Ru膜使用例如Ru 3（CO）12气体和CO气体形成。 铜填充在凹部中，并且通过进行CMP处理形成上侧布线结构。

公开(公告)号：US10026616B2

公开(公告)日：2018-07-17

申请号：US15165524

申请日：2016-05-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji Suzuki ,  Takanobu Hotta ,  Koji Maekawa ,  Yasushi Aiba

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/455 ,  C23C16/02 ,  C23C16/14 ,  H01L21/321 ,  H01L21/3205

Abstract: There is provided a method of reducing stress in a metal film that is highly stressed, the method including: processing the metal film by supplying a metal chloride gas containing a metal of the metal film and a reduction gas for reducing the metal chloride gas onto the metal film; and forming a process film on the metal film to reduce stress in the metal film.

公开(公告)号：US20140045329A1

公开(公告)日：2014-02-13

申请号：US13962327

申请日：2013-08-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro ISHIZAKA ,  Atsushi Gomi ,  Kenji Suzuki ,  Tatsuo Hatano ,  Hiroyuki Toshima ,  Yasushi Mizusawa

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/312 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A Cu wiring forming method forms Cu wiring in a recess of a predetermined pattern including a trench formed in an insulating film on a substrate surface. The method includes: forming a barrier film at least on a surface of the recess; forming a Cu film by PVD to fill the recess with the Cu film; forming an additional layer on the Cu film; polishing an entire surface by CMP to form the Cu wiring in the recess; forming a metal cap including a manganese oxide film on an entire surface including the insulating film and the Cu wiring of the substrate after performing the CMP polishing; and forming a dielectric cap on the metal cap.

Abstract translation: Cu布线形成方法在包括形成在基板表面上的绝缘膜中的沟槽的预定图案的凹部中形成Cu布线。 该方法包括：至少在凹部的表面上形成阻挡膜; 通过PVD形成Cu膜以用Cu膜填充凹部; 在Cu膜上形成附加层; 通过CMP抛光整个表面以在凹槽中形成Cu布线; 在进行CMP抛光之后，在包括绝缘膜和基板的Cu布线的整个表面上形成包括氧化锰膜的金属盖; 以及在所述金属盖上形成电介质盖。

公开(公告)号：US10815567B2

公开(公告)日：2020-10-27

申请号：US15520820

申请日：2015-09-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsuhito Hirose ,  Kunihiro Tada ,  Kenji Suzuki ,  Takeshi Shinohara

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/34

Abstract: A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of the ceiling part in circumferential directions of the placement part and the ceiling part. A reaction gas supplied from the reaction gas supply part into the process space via the ceiling part flows outside of the process space via the annular gap. A plurality of gas flow channels, which is used for forming gas-flow walls, is formed in the outer peripheral portion of the ceiling part which provides the annular gap.

公开(公告)号：US10400330B2

公开(公告)日：2019-09-03

申请号：US15473993

申请日：2017-03-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji Suzuki ,  Takanobu Hotta ,  Tomohisa Maruyama ,  Masayuki Nasu ,  Junya Miyahara ,  Koji Maekawa

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/14 ,  C23C16/08 ,  C23C16/455 ,  H01L21/3205 ,  C23C16/452

Abstract: There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiH4 gas treatment with respect to the target substrate having the base film formed thereon by supplying an SiH4 gas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.

公开(公告)号：US11840759B2

公开(公告)日：2023-12-12

申请号：US17653690

申请日：2022-03-07

Applicant: Tokyo Electron Limited

Inventor： Masafumi Takahashi ,  Kenji Suzuki ,  Tsuyoshi Takahashi ,  Masaki Sano

IPC: C23C16/02 ,  C23C16/455 ,  C23C16/14

CPC classification number: C23C16/0272 ,  C23C16/14 ,  C23C16/45527

Abstract: A method includes: forming a titanium nitride base film containing silicon by alternately repeating: precipitation of titanium nitride by alternately and repeatedly supplying a titanium-containing gas, and supplying a nitriding gas to a substrate on which a recess is formed; and precipitation of silicon nitride by alternately and repeatedly supplying a silicon-containing gas, and supplying a nitriding gas to the substrate; and subsequently, forming a tungsten film so as to bury tungsten in the recess in which the titanium nitride base film is formed, by alternately and repeatedly supplying a raw material gas containing a tungsten raw material and a reaction gas reacting with the raw material gas, to the substrate. A supply flow rate of the silicon-containing gas is adjusted so that a content of the silicon in the titanium nitride base film is high on an opening side rather than on an inner side of the recess.

公开(公告)号：US09406557B2

公开(公告)日：2016-08-02

申请号：US14316251

申请日：2014-06-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Osamu Yokoyama ,  Cheonsoo Han ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Tatsuo Hirasawa ,  Tadahiro Ishizaka ,  Kenji Suzuki

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/288

CPC classification number: H01L21/76877 ,  H01L21/2885 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76867 ,  H01L21/76876 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring.

Abstract translation: 提供了在形成在基板表面上的绝缘膜中形成为具有预定图案的凹部中形成铜（Cu）布线的方法。 所述方法包括：至少在所述凹部的表面上形成阻挡膜，所述阻挡膜用作阻挡Cu的扩散的阻挡层; 通过化学机械沉积（CVD）在阻挡膜上形成Ru膜; 通过物理气相沉积（PVD）在Ru膜上形成Cu合金膜以埋藏凹槽; 使用埋在凹部中的Cu合金膜形成Cu布线; 并在Cu布线上形成电介质膜。