- 专利标题: Quasi-volatile system-level memory
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申请号: US18087661申请日: 2022-12-22
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公开(公告)号: US12105650B2公开(公告)日: 2024-10-01
- 发明人: Robert D. Norman , Eli Harari , Khandker Nazrul Quader , Frank Sai-keung Lee , Richard S. Chernicoff , Youn Cheul Kim , Mehrdad Mofidi
- 申请人: SUNRISE MEMORY CORPORATION
- 申请人地址: US CA San Jose
- 专利权人: SUNRISE MEMORY CORPORATION
- 当前专利权人: SUNRISE MEMORY CORPORATION
- 当前专利权人地址: US CA San Jose
- 代理机构: VLP Law Group LLP
- 代理商 Edward C. Kwok
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F9/4401 ; G06F9/54 ; G06F12/0893 ; G06F12/10 ; G06F13/16 ; G06F13/28 ; G06F13/42 ; H01L25/065 ; H01L25/18
摘要:
A high-capacity system memory may be built from both quasi-volatile (QV) memory circuits, logic circuits, and static random-access memory (SRAM) circuits. Using the SRAM circuits as buffers or cache for the QV memory circuits, the system memory may achieve access latency performance of the SRAM circuits and may be used as code memory. The system memory is also capable of direct memory access (DMA) operations and includes an arithmetic logic unit for performing computational memory tasks. The system memory may include one or more embedded processor. In addition, the system memory may be configured for multi-channel memory accesses by multiple host processors over multiple host ports. The system memory may be provided in the dual-in-line memory module (DIMM) format.
公开/授权文献
- US20230131169A1 QUASI-VOLATILE SYSTEM-LEVEL MEMORY 公开/授权日:2023-04-27
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