Invention Grant
- Patent Title: Slurry composition, semiconductor structure and method for forming the same
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Application No.: US17460929Application Date: 2021-08-30
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Publication No.: US12131944B2Publication Date: 2024-10-29
- Inventor: Chun-Wei Hsu , Chih-Chieh Chang , Yi-Sheng Lin , Jian-Ci Lin , Jeng-Chi Lin , Ting-Hsun Chang , Liang-Guang Chen , Ji Cui , Kei-Wei Chen , Chi-Jen Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- Main IPC: H01L21/768
- IPC: H01L21/768 ; C09G1/02 ; H01L23/522
Abstract:
A slurry composition, a semiconductor structure and a method for forming a semiconductor structure are provided. The slurry composition includes a slurry and a precipitant dispensed in the slurry. The semiconductor structure comprises a blocking layer including at least one element of the precipitant. The method includes using the slurry composition with the precipitant to polish a conductive layer and causing the precipitant to flow into the gap.
Public/Granted literature
- US20230064918A1 SLURRY COMPOSITION, SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2023-03-02
Information query
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