Invention Grant
- Patent Title: Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant
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Application No.: US17573452Application Date: 2022-01-11
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Publication No.: US12176203B2Publication Date: 2024-12-24
- Inventor: Fei Zhou , Rahul Sharangpani , Raghuveer S. Makala , Yujin Terasawa , Naoki Takeguchi , Kensuke Yamaguchi , Masaaki Higashitani
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: THE MARBURY LAW GROUP PLLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/458
Abstract:
A method of depositing a metal includes providing a structure a process chamber, and providing a metal fluoride gas and a growth-suppressant gas into the process chamber to deposit the metal over the structure. The metal may comprise a word line or another conductor of a three-dimensional memory device.
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