Invention Grant
- Patent Title: Ion beam sputtering with ion assisted deposition for coatings on chamber components
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Application No.: US18101273Application Date: 2023-01-25
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Publication No.: US12195839B2Publication Date: 2025-01-14
- Inventor: Jennifer Y. Sun , Vahid Firouzdor , Biraja Prasad Kanungo , Tom K Cho , Vedapuram S. Achutharaman , Ying Zhang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: LOWENSTEIN SANDLER LLP
- Main IPC: C23C14/08
- IPC: C23C14/08 ; C04B35/00 ; C04B35/505 ; C04B35/622 ; C04B41/00 ; C04B41/45 ; C04B41/50 ; C04B41/52 ; C04B41/87 ; C04B41/89 ; C23C14/46 ; C23C14/58 ; H01J37/32

Abstract:
A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 μm. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.
Public/Granted literature
- US20230167540A1 ION BEAM SPUTTERING WITH ION ASSISTED DEPOSITION FOR COATINGS ON CHAMBER COMPONENTS Public/Granted day:2023-06-01
Information query
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