Invention Publication
- Patent Title: ION BEAM SPUTTERING WITH ION ASSISTED DEPOSITION FOR COATINGS ON CHAMBER COMPONENTS
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Application No.: US18101273Application Date: 2023-01-25
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Publication No.: US20230167540A1Publication Date: 2023-06-01
- Inventor: Jennifer Y. Sun , Vahid Firouzdor , Biraja Prasad Kanungo , Tom K. Cho , Vedapuram S. Achutharaman , Ying Zhang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- The original application number of the division: US15844251 2017.12.15
- Main IPC: C23C14/08
- IPC: C23C14/08 ; C04B41/50 ; C23C14/46 ; C23C14/58 ; H01J37/32 ; C04B41/87 ; C04B41/89 ; C04B41/00 ; C04B41/52 ; C04B35/505 ; C04B35/622 ; C04B41/45 ; C04B35/00

Abstract:
A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 µm. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol% to less than 100 mol% of Y2O3, over 0 mol% to 60 mol% of ZrO2, and 0 mol% to 9 mol% of Al2O3.
Public/Granted literature
- US12195839B2 Ion beam sputtering with ion assisted deposition for coatings on chamber components Public/Granted day:2025-01-14
Information query
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