公开(公告)号：US10604831B2

公开(公告)日：2020-03-31

申请号：US16231139

申请日：2018-12-21

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Yikai Chen ,  Biraja Prasad Kanungo

IPC分类号： C23C4/134 ,  C23C4/11 ,  C04B35/505 ,  C04B35/48 ,  C04B35/10

摘要： A ceramic coating is coated on a body of an article, wherein the ceramic coating includes Y2O3, Y4Al2O9, Y3Al5O12, or a solid-solution of Y2O3 mixed with at least one of ZrO2, Al2O3, HfO2, Er2O3, Nd2O3, Nb2O5, CeO2, Sm2O3 or Yb2O3. The ceramic coating is applied to the body by a method including providing a plasma spraying system having a plasma current in the range of between about 100 A to about 1000 A, positioning a torch standoff of the plasma spraying system a distance from the body between about 60 mm and about 250 mm, flowing a first gas through the plasma spraying system at a rate of between about 30 L/min and about 400 L/min, and plasma spray coating the body to form a ceramic coating, wherein splats of the coating are amorphous and have a pancake shape.

公开(公告)号：US09725799B2

公开(公告)日：2017-08-08

申请号：US14562339

申请日：2014-12-05

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K. Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC分类号： C23C14/34 ,  C23C14/08 ,  C04B41/50 ,  C23C14/46 ,  C23C14/58 ,  H01J37/32 ,  C04B41/87 ,  C04B41/89 ,  C04B41/00 ,  C04B41/52 ,  C04B35/505 ,  C04B35/622

CPC分类号： C23C14/088 ,  C04B35/00 ,  C04B35/505 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/4529 ,  C04B41/5045 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3246 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/3873 ,  C04B2235/428 ,  C04B2235/445 ,  C23C14/08 ,  C23C14/083 ,  C23C14/46 ,  C23C14/5806 ,  H01J37/32477 ,  Y10T428/26 ,  Y10T428/265 ,  C04B35/10 ,  C04B35/50 ,  C04B35/14 ,  C04B35/584 ,  C04B35/565 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/5035 ,  C04B2103/54

摘要： A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 μm.

公开(公告)号：US09343289B2

公开(公告)日：2016-05-17

申请号：US13830608

申请日：2013-03-14

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Biraja Prasad Kanungo ,  Dmitry Lubomirsky

IPC分类号： C23C4/10 ,  H01L21/02 ,  H01J37/32 ,  C04B41/87 ,  C04B41/00 ,  C04B41/50

CPC分类号： H01J37/32495 ,  C04B41/009 ,  C04B41/5042 ,  C04B41/87 ,  C23C4/11 ,  C23C4/134 ,  H01J37/32477 ,  H01L21/02 ,  H01L21/67017 ,  Y10T428/24413 ,  Y10T428/2495 ,  Y10T428/24975 ,  Y10T428/252 ,  C04B35/10 ,  C04B35/565 ,  C04B41/4527 ,  C04B41/5032

摘要： To manufacture a coating for an article for a semiconductor processing chamber, the article including a body of at least one of Al, Al2O3, or SiC, and a ceramic coating on the body. The ceramic coating includes a compound comprising Y2O3 in a range from about 50 mol % to about 75 mol %, ZrO2 in a range from about 10 mol % to about 30 mol %, and Al2O3 in a range from about 10 mol % to about 30 mol %, wherein the number of nodules per inch is in a range from about 30 nodules to about 45 nodules and the porosity is in a range from about 2.5% to about 3.2%.

摘要翻译： 为了制造用于半导体处理室的制品的涂层，该制品包括Al，Al 2 O 3或SiC中的至少一种的主体和在主体上的陶瓷涂层。 陶瓷涂层包括包含约50mol％至约75mol％范围内的Y 2 O 3，约10mol％至约30mol％范围内的ZrO 2和约10mol％至约30mol％范围内的Al 2 O 3的化合物 mol％，其中每英寸的结节数在约30个结节到约45个结节的范围内，孔隙率在约2.5％至约3.2％的范围内。

公开(公告)号：US11566317B2

公开(公告)日：2023-01-31

申请号：US15711885

申请日：2017-09-21

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K. Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC分类号： C04B41/89 ,  C04B41/00 ,  C04B41/52 ,  C04B35/505 ,  C04B35/622 ,  C04B41/45 ,  C04B35/00 ,  C23C14/08 ,  C04B41/50 ,  C23C14/46 ,  C23C14/58 ,  H01J37/32 ,  C04B41/87

摘要： An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF3, Er4Al2O9, ErAlO3, and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

公开(公告)号：US20180105922A1

公开(公告)日：2018-04-19

申请号：US15844251

申请日：2017-12-15

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K. Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC分类号： C23C14/08 ,  C04B35/505 ,  C04B35/622 ,  C04B41/00 ,  C04B41/45 ,  C04B41/50 ,  C23C14/46 ,  C04B41/87 ,  C04B41/89 ,  H01J37/32 ,  C23C14/58 ,  C04B41/52

CPC分类号： C23C14/088 ,  C04B35/00 ,  C04B35/505 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/4529 ,  C04B41/5045 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3246 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/3873 ,  C04B2235/428 ,  C04B2235/445 ,  C23C14/08 ,  C23C14/083 ,  C23C14/46 ,  C23C14/5806 ,  H01J37/32477 ,  Y10T428/26 ,  Y10T428/265 ,  C04B35/10 ,  C04B35/50 ,  C04B35/14 ,  C04B35/584 ,  C04B35/565 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/5035 ,  C04B2103/54

摘要： An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.

公开(公告)号：US09797037B2

公开(公告)日：2017-10-24

申请号：US15211993

申请日：2016-07-15

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K. Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC分类号： C23C14/08 ,  C23C14/46 ,  C04B41/50 ,  C04B41/52 ,  C23C14/58 ,  C04B41/89 ,  C04B35/505 ,  C04B35/622 ,  H01J37/32 ,  C04B41/87 ,  C04B41/00

CPC分类号： C23C14/088 ,  C04B35/00 ,  C04B35/505 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/4529 ,  C04B41/5045 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3246 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/3873 ,  C04B2235/428 ,  C04B2235/445 ,  C23C14/08 ,  C23C14/083 ,  C23C14/46 ,  C23C14/5806 ,  H01J37/32477 ,  Y10T428/26 ,  Y10T428/265 ,  C04B35/10 ,  C04B35/50 ,  C04B35/14 ,  C04B35/584 ,  C04B35/565 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/5035 ,  C04B2103/54

摘要： An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide has a composition of 40-45 mol % of Y2O3, 5-10 mol % of ZrO2, 35-40 mol % of Er2O3, 5-10 mol % of Gd2O3, and 5-15 mol % of SiO2.

公开(公告)号：US20150329430A1

公开(公告)日：2015-11-19

申请号：US14712059

申请日：2015-05-14

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Yikai Chen ,  Biraja Prasad Kanungo

IPC分类号： C04B35/622 ,  B32B9/04 ,  C04B35/505 ,  C23C24/10 ,  B32B37/06

CPC分类号： C23C24/10 ,  B32B9/048 ,  B32B18/00 ,  B32B37/06 ,  B32B2305/77 ,  B32B2315/02 ,  C04B35/62222 ,  C04B2235/5454 ,  C04B2235/604 ,  C04B2235/666 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/348 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/368 ,  C23C28/042

摘要： Disclosed herein are methods for fabricating layered ceramic materials via field assisted sintering technology. A method includes forming a ceramic green body on a surface of a substrate, and sintering the ceramic green body using a field-assisted sintering process to form a ceramic layer joined to the substrate.

摘要翻译： 本文公开了通过场辅助烧结技术制造层状陶瓷材料的方法。 一种方法包括在基板的表面上形成陶瓷生坯，并使用场辅助烧结工艺烧结陶瓷生坯以形成与基板接合的陶瓷层。

公开(公告)号：US20150158775A1

公开(公告)日：2015-06-11

申请号：US14562339

申请日：2014-12-05

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K. Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC分类号： C04B41/50 ,  C23C14/22 ,  C04B41/00

CPC分类号： C23C14/088 ,  C04B35/00 ,  C04B35/505 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/4529 ,  C04B41/5045 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3246 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/3873 ,  C04B2235/428 ,  C04B2235/445 ,  C23C14/08 ,  C23C14/083 ,  C23C14/46 ,  C23C14/5806 ,  H01J37/32477 ,  Y10T428/26 ,  Y10T428/265 ,  C04B35/10 ,  C04B35/50 ,  C04B35/14 ,  C04B35/584 ,  C04B35/565 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/5035 ,  C04B2103/54

摘要： A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 μm.

摘要翻译： 制造制品的方法包括提供用于蚀刻反应器的部件。 然后进行离子辅助沉积（IBS-IAD）的离子束溅射，以在组件的至少一个表面上沉积保护层，其中保护层是厚度小于1000μm的耐等离子体膜。

公开(公告)号：US11566318B2

公开(公告)日：2023-01-31

申请号：US15712094

申请日：2017-09-21

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K. Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC分类号： C04B41/89 ,  C04B41/00 ,  C04B41/52 ,  C04B35/505 ,  C04B35/622 ,  C04B41/45 ,  C04B35/00 ,  C23C14/08 ,  C04B41/50 ,  C23C14/46 ,  C23C14/58 ,  H01J37/32 ,  C04B41/87

摘要： An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

公开(公告)号：US20190105751A1

公开(公告)日：2019-04-11

申请号：US16216796

申请日：2018-12-11

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Vahid Firouzdor ,  David Koonce ,  Biraja Prasad Kanungo

IPC分类号： B24B31/00 ,  B24B33/02 ,  B24B5/40 ,  B24B31/116

摘要： Disclosed herein are systems and methods for polishing internal surfaces of apertures in semiconductor processing chamber components. A method includes providing a ceramic article having at least one aperture, the ceramic article being a component for a semiconductor processing chamber. The method further includes polishing the at least one aperture based on flowing an abrasive media through the at least one aperture of the ceramic article, the abrasive media including a polymer base and a plurality of abrasive particles.