Invention Grant
- Patent Title: Apparatus and method for processing substrate using plasma
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Application No.: US17885543Application Date: 2022-08-11
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Publication No.: US12237151B2Publication Date: 2025-02-25
- Inventor: Seong Gil Lee , Young Je Um , Myoung Sub Noh , Dong Sub Oh , Min Sung Han , Dong Hun Kim , Wan Jae Park
- Applicant: SEMES CO., LTD.
- Applicant Address: KR Chungcheongnam-do
- Assignee: SEMES CO., LTD.
- Current Assignee: SEMES CO., LTD.
- Current Assignee Address: KR Chungcheongnam-do
- Agency: WOMBLE BOND DICKINSON (US) LLP
- Priority: KR10-2021-0182227 20211217
- Main IPC: H01J37/32
- IPC: H01J37/32 ; B08B7/00 ; H01L21/02 ; H01L21/3065

Abstract:
A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.
Public/Granted literature
- US20230197412A1 APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING PLASMA Public/Granted day:2023-06-22
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