公开(公告)号：US20210013049A1

公开(公告)日：2021-01-14

申请号：US16918212

申请日：2020-07-01

申请人： SEMES CO., LTD.

发明人： Seong Gil Lee ,  Sehoon Oh ,  Dong Sub Oh ,  Ji-Hwan Lee ,  Dong-Hun Kim ,  Wan Jae Park

IPC分类号： H01L21/3213 ,  H01L21/67 ,  H01J37/32

摘要： An apparatus and method for processing a substrate using plasma, which has high plasma stability and process reproducibility, is provided. The method includes providing an apparatus for processing a substrate comprising a plasma generating region and a process region separate from the plasma generating region, placing the substrate including a silicon layer and an oxide layer in the process region, forming a hydrogen atmosphere in the process region by providing a hydrogen-based gas to the process region without passing through the plasma generating region, generating plasma by providing a fluorine-based gas to the plasma generating region, and providing the generated plasma to the process region to selectively remove the silicon layer compared to the oxide layer.

公开(公告)号：US20220090861A1

公开(公告)日：2022-03-24

申请号：US17366247

申请日：2021-07-02

申请人： SEMES Co., Ltd.

发明人： Young Je Um ,  Joun Taek Koo ,  Wan Jae Park ,  Dong Hun Kim ,  Seong Gil Lee ,  Ji Hwan Lee ,  Dong Sub Oh ,  Myoung Sub Noh ,  Du Ri Kim

IPC分类号： F27B9/02 ,  F27B17/00

摘要： A substrate treating apparatus and a substrate treating system including the same are disclosed, in which the number of heat treatment chambers such as anneal chambers may be varied. The substrate treating apparatus includes a first chamber heat-treating a substrate; and a second chamber treating the substrate in another way different from heat-treatment, wherein the number of the first chambers is varied depending on the number of the second chambers that need heat treatment for the substrate.

公开(公告)号：US11148150B2

公开(公告)日：2021-10-19

申请号：US16659355

申请日：2019-10-21

申请人： SEMES CO., LTD.

发明人： Byoungdoo Choi ,  Yangyeol Ryu ,  Dong Sub Oh ,  Hye Bin Baek

IPC分类号： B05B1/04 ,  B05B1/34 ,  B05C5/02 ,  B05C5/00

摘要： The inventive concept relates to a liquid dispensing nozzle and an apparatus for treating a substrate. The liquid dispensing nozzle includes a first fluid channel that is formed in the nozzle and through which a processing liquid flows and a second fluid channel in communication with the first fluid channel, the second fluid channel being connected to a dispensing end of the nozzle. The second fluid channel has a larger width than the first fluid channel, and a central axis of the first fluid channel and a central axis of the second fluid channel are connected with each other in a straight line.

公开(公告)号：US20220084829A1

公开(公告)日：2022-03-17

申请号：US17393601

申请日：2021-08-04

申请人： SEMES Co., Ltd.

发明人： Joun Taek Koo ,  Seong Gil Lee ,  Wan Jae Park ,  Young Je Um ,  Dong Hun Kim ,  Ji Hwan Lee ,  Dong Sub Oh ,  Myoung Sub Noh ,  Du Ri Kim

IPC分类号： H01L21/28 ,  H01L21/3065 ,  H01L21/67 ,  H01L27/11556 ,  H01L27/11582

摘要： A method of fabricating a semiconductor device with improved electrical characteristics and reliability is provided. The method of fabricating the semiconductor device includes providing a substrate, in which a first oxide film, a nitride film, and a second oxide film are sequentially stacked, and a trench penetrating the first oxide film, the nitride film, and the second oxide film is formed, chamfering the oxide film exposed by the trench while removing a part of the nitride film exposed by the trench by using a first plasma process, and removing the nitride film left after the first plasma process by using a second plasma process.

公开(公告)号：US20220076925A1

公开(公告)日：2022-03-10

申请号：US17392586

申请日：2021-08-03

申请人： SEMES Co., Ltd.

发明人： Joun Yaek Koo ,  Seong Gil Lee ,  Dong Sub Oh ,  Ji Hwan Lee ,  Young Je Um ,  Dong Hun Kim ,  Wan Jae Park ,  Myoung Sub Noh ,  Du Ri Kim

IPC分类号： H01J37/32 ,  H01L21/02 ,  B08B7/00 ,  H01L21/311

摘要： A substrate processing apparatus and a substrate processing method using plasma capable of controlling an etch rate and/or uniformity according to a position of a substrate are provided. The substrate processing apparatus includes a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space for processing a substrate under the shower head; a first gas supply module for providing a first gas for generating plasma in the first space; a second gas supply module for providing a second gas to be mixed with the effluent of the plasma in the processing space; and a third gas supply module for providing a third gas to be mixed with the effluent of the plasma in the processing space.