公开(公告)号：US20210013049A1

公开(公告)日：2021-01-14

申请号：US16918212

申请日：2020-07-01

Applicant: SEMES CO., LTD.

Inventor： Seong Gil Lee ,  Sehoon Oh ,  Dong Sub Oh ,  Ji-Hwan Lee ,  Dong-Hun Kim ,  Wan Jae Park

IPC: H01L21/3213 ,  H01L21/67 ,  H01J37/32

Abstract: An apparatus and method for processing a substrate using plasma, which has high plasma stability and process reproducibility, is provided. The method includes providing an apparatus for processing a substrate comprising a plasma generating region and a process region separate from the plasma generating region, placing the substrate including a silicon layer and an oxide layer in the process region, forming a hydrogen atmosphere in the process region by providing a hydrogen-based gas to the process region without passing through the plasma generating region, generating plasma by providing a fluorine-based gas to the plasma generating region, and providing the generated plasma to the process region to selectively remove the silicon layer compared to the oxide layer.

公开(公告)号：US20230352275A1

公开(公告)日：2023-11-02

申请号：US17733653

申请日：2022-04-29

Applicant: SEMES CO., LTD.

Inventor： Yoon Jong Ju ,  Min Sung Han ,  Jae Hoo Lee ,  Hyun Soo Kim ,  Seong Hak Bae ,  Wan Jae Park

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32091 ,  H01J2237/186

Abstract: A substrate processing apparatus and method for increasing substrate processing efficiency are provided. The substrate processing apparatus comprises a process chamber, in which a reaction gas is processed to have a first pressure therein, a first pumping module for pumping the process chamber to have a second pressure smaller than the first pressure, a second pumping module for pumping the process chamber to have a third pressure smaller than the second pressure, and a first automatic pressure control module for adjusting a magnitude of the second pressure by adjusting a pumping pressure of the first pumping module.

公开(公告)号：US12176185B2

公开(公告)日：2024-12-24

申请号：US17712055

申请日：2022-04-01

Applicant: SEMES CO., LTD.

Inventor： Min Sung Han ,  Jae Hoo Lee ,  Yoon Jong Ju ,  Wan Jae Park

IPC: H01J37/32 ,  H01L21/311

Abstract: Provided are a substrate processing apparatus and method for increasing the uniformity of substrate processing. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker, a second space disposed between the ion blocker and a shower head, and a processing space for processing a substrate under the shower head, wherein the ion blocker includes a first region and a second region that are separated from each other, and includes a plurality of first supply ports for supplying a first reaction gas to the second space, wherein the plurality of first supply ports are formed in the first region and not formed in the second region, wherein the shower head includes a third region corresponding to the first region, a fourth region corresponding to the second region, and a plurality of second supply ports for supplying a second reaction gas to the second space, wherein the plurality of second supply ports are not formed in the third region, and are formed in the fourth region.

公开(公告)号：US12237151B2

公开(公告)日：2025-02-25

申请号：US17885543

申请日：2022-08-11

Applicant: SEMES CO., LTD.

Inventor： Seong Gil Lee ,  Young Je Um ,  Myoung Sub Noh ,  Dong Sub Oh ,  Min Sung Han ,  Dong Hun Kim ,  Wan Jae Park

IPC: H01J37/32 ,  B08B7/00 ,  H01L21/02 ,  H01L21/3065

Abstract: A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

公开(公告)号：US12146710B2

公开(公告)日：2024-11-19

申请号：US17366247

申请日：2021-07-02

Applicant: SEMES Co., Ltd.

Inventor： Young Je Um ,  Joun Taek Koo ,  Wan Jae Park ,  Dong Hun Kim ,  Seong Gil Lee ,  Ji Hwan Lee ,  Dong Sub Oh ,  Myoung Sub Noh ,  Du Ri Kim

IPC: F27B9/02 ,  F27B17/00

Abstract: A substrate treating apparatus and a substrate treating system including the same are disclosed, in which the number of heat treatment chambers such as anneal chambers may be varied. The substrate treating apparatus includes a first chamber heat-treating a substrate; and a second chamber treating the substrate in another way different from heat-treatment, wherein the number of the first chambers is varied depending on the number of the second chambers that need heat treatment for the substrate.

公开(公告)号：US20220084829A1

公开(公告)日：2022-03-17

申请号：US17393601

申请日：2021-08-04

Applicant: SEMES Co., Ltd.

Inventor： Joun Taek Koo ,  Seong Gil Lee ,  Wan Jae Park ,  Young Je Um ,  Dong Hun Kim ,  Ji Hwan Lee ,  Dong Sub Oh ,  Myoung Sub Noh ,  Du Ri Kim

IPC: H01L21/28 ,  H01L21/3065 ,  H01L21/67 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method of fabricating a semiconductor device with improved electrical characteristics and reliability is provided. The method of fabricating the semiconductor device includes providing a substrate, in which a first oxide film, a nitride film, and a second oxide film are sequentially stacked, and a trench penetrating the first oxide film, the nitride film, and the second oxide film is formed, chamfering the oxide film exposed by the trench while removing a part of the nitride film exposed by the trench by using a first plasma process, and removing the nitride film left after the first plasma process by using a second plasma process.

公开(公告)号：US20220076925A1

公开(公告)日：2022-03-10

申请号：US17392586

申请日：2021-08-03

Applicant: SEMES Co., Ltd.

Inventor： Joun Yaek Koo ,  Seong Gil Lee ,  Dong Sub Oh ,  Ji Hwan Lee ,  Young Je Um ,  Dong Hun Kim ,  Wan Jae Park ,  Myoung Sub Noh ,  Du Ri Kim

IPC: H01J37/32 ,  H01L21/02 ,  B08B7/00 ,  H01L21/311

Abstract: A substrate processing apparatus and a substrate processing method using plasma capable of controlling an etch rate and/or uniformity according to a position of a substrate are provided. The substrate processing apparatus includes a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space for processing a substrate under the shower head; a first gas supply module for providing a first gas for generating plasma in the first space; a second gas supply module for providing a second gas to be mixed with the effluent of the plasma in the processing space; and a third gas supply module for providing a third gas to be mixed with the effluent of the plasma in the processing space.

公开(公告)号：US12142492B2

公开(公告)日：2024-11-12

申请号：US16952071

申请日：2020-11-18

Applicant: SEMES CO., LTD.

Inventor： Ji-Hwan Lee ,  Seong Gil Lee ,  Dong Sub Oh ,  Myoungsub Noh ,  Dong-Hun Kim ,  Wan Jae Park

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: A method for processing a substrate includes providing the substrate, a film being formed on the substrate, performing pretreatment to surface-treat the film formed on the substrate using a treatment gas in a plasma state, and performing, after the pretreatment, liquid treatment to remove the film from the substrate by supplying a treatment liquid onto the substrate.

公开(公告)号：US11978654B2

公开(公告)日：2024-05-07

申请号：US17082634

申请日：2020-10-28

Applicant: SEMES Co. Ltd.

Inventor： Min Sung Han ,  Wan Jae Park ,  Yoon Jong Ju ,  Jaehoo Lee

IPC: H01L21/687 ,  B25J11/00 ,  B25J15/00 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H05B1/02 ,  H05B3/00

CPC classification number: H01L21/68707 ,  B25J11/0095 ,  B25J15/0014 ,  H01J37/32724 ,  H01J37/32733 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/67201 ,  H01L21/6833 ,  H05B1/0233 ,  H05B3/0047 ,  H01J2237/204 ,  H01J2237/334

Abstract: The present invention relates to a substrate processing apparatus capable of shortening a process time, and the substrate processing apparatus according to the present invention comprises an index chamber having a transfer robot loading/unloading a substrate; a process chamber having a heating means heating the substrate and processing the substrate; a loadlock chamber disposed between the index chamber and the process chamber; and a conveying chamber having a conveying robot conveying the substrate between the process chamber and the loadlock chamber, wherein a pre-heating means is provided in the conveying robot to pre-heat the substrate in a state before processing.

公开(公告)号：US20220090861A1

公开(公告)日：2022-03-24

申请号：US17366247

申请日：2021-07-02

Applicant: SEMES Co., Ltd.

Inventor： Young Je Um ,  Joun Taek Koo ,  Wan Jae Park ,  Dong Hun Kim ,  Seong Gil Lee ,  Ji Hwan Lee ,  Dong Sub Oh ,  Myoung Sub Noh ,  Du Ri Kim

IPC: F27B9/02 ,  F27B17/00

Abstract: A substrate treating apparatus and a substrate treating system including the same are disclosed, in which the number of heat treatment chambers such as anneal chambers may be varied. The substrate treating apparatus includes a first chamber heat-treating a substrate; and a second chamber treating the substrate in another way different from heat-treatment, wherein the number of the first chambers is varied depending on the number of the second chambers that need heat treatment for the substrate.