公开(公告)号：US20210013049A1

公开(公告)日：2021-01-14

申请号：US16918212

申请日：2020-07-01

Applicant: SEMES CO., LTD.

Inventor： Seong Gil Lee ,  Sehoon Oh ,  Dong Sub Oh ,  Ji-Hwan Lee ,  Dong-Hun Kim ,  Wan Jae Park

IPC: H01L21/3213 ,  H01L21/67 ,  H01J37/32

Abstract: An apparatus and method for processing a substrate using plasma, which has high plasma stability and process reproducibility, is provided. The method includes providing an apparatus for processing a substrate comprising a plasma generating region and a process region separate from the plasma generating region, placing the substrate including a silicon layer and an oxide layer in the process region, forming a hydrogen atmosphere in the process region by providing a hydrogen-based gas to the process region without passing through the plasma generating region, generating plasma by providing a fluorine-based gas to the plasma generating region, and providing the generated plasma to the process region to selectively remove the silicon layer compared to the oxide layer.

公开(公告)号：US12142492B2

公开(公告)日：2024-11-12

申请号：US16952071

申请日：2020-11-18

Applicant: SEMES CO., LTD.

Inventor： Ji-Hwan Lee ,  Seong Gil Lee ,  Dong Sub Oh ,  Myoungsub Noh ,  Dong-Hun Kim ,  Wan Jae Park

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: A method for processing a substrate includes providing the substrate, a film being formed on the substrate, performing pretreatment to surface-treat the film formed on the substrate using a treatment gas in a plasma state, and performing, after the pretreatment, liquid treatment to remove the film from the substrate by supplying a treatment liquid onto the substrate.

公开(公告)号：US20220090861A1

公开(公告)日：2022-03-24

申请号：US17366247

申请日：2021-07-02

Applicant: SEMES Co., Ltd.

Inventor： Young Je Um ,  Joun Taek Koo ,  Wan Jae Park ,  Dong Hun Kim ,  Seong Gil Lee ,  Ji Hwan Lee ,  Dong Sub Oh ,  Myoung Sub Noh ,  Du Ri Kim

IPC: F27B9/02 ,  F27B17/00

Abstract: A substrate treating apparatus and a substrate treating system including the same are disclosed, in which the number of heat treatment chambers such as anneal chambers may be varied. The substrate treating apparatus includes a first chamber heat-treating a substrate; and a second chamber treating the substrate in another way different from heat-treatment, wherein the number of the first chambers is varied depending on the number of the second chambers that need heat treatment for the substrate.

公开(公告)号：US12237151B2

公开(公告)日：2025-02-25

申请号：US17885543

申请日：2022-08-11

Applicant: SEMES CO., LTD.

Inventor： Seong Gil Lee ,  Young Je Um ,  Myoung Sub Noh ,  Dong Sub Oh ,  Min Sung Han ,  Dong Hun Kim ,  Wan Jae Park

IPC: H01J37/32 ,  B08B7/00 ,  H01L21/02 ,  H01L21/3065

Abstract: A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

公开(公告)号：US12146710B2

公开(公告)日：2024-11-19

申请号：US17366247

申请日：2021-07-02

Applicant: SEMES Co., Ltd.

Inventor： Young Je Um ,  Joun Taek Koo ,  Wan Jae Park ,  Dong Hun Kim ,  Seong Gil Lee ,  Ji Hwan Lee ,  Dong Sub Oh ,  Myoung Sub Noh ,  Du Ri Kim

IPC: F27B9/02 ,  F27B17/00

Abstract: A substrate treating apparatus and a substrate treating system including the same are disclosed, in which the number of heat treatment chambers such as anneal chambers may be varied. The substrate treating apparatus includes a first chamber heat-treating a substrate; and a second chamber treating the substrate in another way different from heat-treatment, wherein the number of the first chambers is varied depending on the number of the second chambers that need heat treatment for the substrate.

公开(公告)号：US20220084829A1

公开(公告)日：2022-03-17

申请号：US17393601

申请日：2021-08-04

Applicant: SEMES Co., Ltd.

Inventor： Joun Taek Koo ,  Seong Gil Lee ,  Wan Jae Park ,  Young Je Um ,  Dong Hun Kim ,  Ji Hwan Lee ,  Dong Sub Oh ,  Myoung Sub Noh ,  Du Ri Kim

IPC: H01L21/28 ,  H01L21/3065 ,  H01L21/67 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method of fabricating a semiconductor device with improved electrical characteristics and reliability is provided. The method of fabricating the semiconductor device includes providing a substrate, in which a first oxide film, a nitride film, and a second oxide film are sequentially stacked, and a trench penetrating the first oxide film, the nitride film, and the second oxide film is formed, chamfering the oxide film exposed by the trench while removing a part of the nitride film exposed by the trench by using a first plasma process, and removing the nitride film left after the first plasma process by using a second plasma process.

公开(公告)号：US20220076925A1

公开(公告)日：2022-03-10

申请号：US17392586

申请日：2021-08-03

Applicant: SEMES Co., Ltd.

Inventor： Joun Yaek Koo ,  Seong Gil Lee ,  Dong Sub Oh ,  Ji Hwan Lee ,  Young Je Um ,  Dong Hun Kim ,  Wan Jae Park ,  Myoung Sub Noh ,  Du Ri Kim

IPC: H01J37/32 ,  H01L21/02 ,  B08B7/00 ,  H01L21/311

Abstract: A substrate processing apparatus and a substrate processing method using plasma capable of controlling an etch rate and/or uniformity according to a position of a substrate are provided. The substrate processing apparatus includes a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space for processing a substrate under the shower head; a first gas supply module for providing a first gas for generating plasma in the first space; a second gas supply module for providing a second gas to be mixed with the effluent of the plasma in the processing space; and a third gas supply module for providing a third gas to be mixed with the effluent of the plasma in the processing space.