Invention Grant
- Patent Title: Substrate processing system and substrate processing method
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Application No.: US17259244Application Date: 2019-07-18
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Publication No.: US12255063B2Publication Date: 2025-03-18
- Inventor: Hayato Tanoue , Takashi Uno , Satoshi Ookawa , Suguru Enokida
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Shih IP Law Group, PLLC.
- Priority: JP2018-135424 20180719
- International Application: PCT/JP2019/028310 WO 20190718
- International Announcement: WO2020/017599 WO 20200123
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/02 ; H01L21/67 ; H01L21/687

Abstract:
A substrate processing system configured to process a substrate includes a first modifying apparatus configured to form, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, an internal modification layer elongated within the first substrate in a plane direction from a center of the first substrate toward at least an edge portion of the first substrate as a removing target; a second modifying apparatus configured to form, within the first substrate, an edge modification layer elongated in a thickness direction of the first substrate along a boundary between the edge portion and a central portion of the first substrate; and a separating apparatus configured to separate a portion of the first substrate at a rear surface side, starting from the internal modification layer.
Public/Granted literature
- US20210296119A1 SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD Public/Granted day:2021-09-23
Information query
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