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公开(公告)号:US12191149B2
公开(公告)日:2025-01-07
申请号:US17772163
申请日:2020-09-11
Applicant: Tokyo Electron Limited
Inventor: Hayato Tanoue , Yohei Yamashita
IPC: B23K26/53 , B24B7/22 , H01L21/268 , H01L21/304 , B23K103/00
Abstract: A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.
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公开(公告)号:US11450578B2
公开(公告)日:2022-09-20
申请号:US17049068
申请日:2019-04-15
Applicant: Tokyo Electron Limited
Inventor: Hayato Tanoue
IPC: H01L21/67 , H01L21/66 , H01L21/311
Abstract: A substrate processing system includes: a modification layer forming device configured to form a modification layer within a first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; an interface processing device configured to process an interface where the first substrate and a second substrate are bonded in the peripheral portion; a periphery removing device configured to remove the peripheral portion starting from the modification layer; a position detection device configured to detect a position of the modification layer or a position of the interface; and a control device configured to control the modification layer forming device and the interface processing device. The control device controls the position of the interface based on the detected position of the modification layer, or controls the position of the modification layer based on the detected position of the interface.
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公开(公告)号:US12255063B2
公开(公告)日:2025-03-18
申请号:US17259244
申请日:2019-07-18
Applicant: Tokyo Electron Limited
Inventor: Hayato Tanoue , Takashi Uno , Satoshi Ookawa , Suguru Enokida
IPC: H01L21/762 , H01L21/02 , H01L21/67 , H01L21/687
Abstract: A substrate processing system configured to process a substrate includes a first modifying apparatus configured to form, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, an internal modification layer elongated within the first substrate in a plane direction from a center of the first substrate toward at least an edge portion of the first substrate as a removing target; a second modifying apparatus configured to form, within the first substrate, an edge modification layer elongated in a thickness direction of the first substrate along a boundary between the edge portion and a central portion of the first substrate; and a separating apparatus configured to separate a portion of the first substrate at a rear surface side, starting from the internal modification layer.
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公开(公告)号:US12087588B2
公开(公告)日:2024-09-10
申请号:US17287558
申请日:2019-09-03
Applicant: Tokyo Electron Limited
Inventor: Hirotoshi Mori , Yoshihiro Kawaguchi , Kazuya Hisano , Hayato Tanoue
IPC: H01L21/304 , B23K26/53 , H01L21/306 , H01L21/67 , H01L21/68 , H01L21/687
CPC classification number: H01L21/304 , B23K26/53 , H01L21/30604 , H01L21/67092 , H01L21/67259 , H01L21/681 , H01L21/68764
Abstract: A substrate processing apparatus includes a holder configured to hold a combined substrate in which a first substrate and a second substrate are bonded to each other; a first detector configured to detect an outer end portion of the first substrate; a second detector configured to detect a boundary between a bonding region where the first substrate and the second substrate are bonded and a non-bonding region located at an outside of the bonding region; a periphery removing device configured to remove a peripheral portion of the first substrate as a removing target from the combined substrate held by the holder.
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公开(公告)号:US12142483B2
公开(公告)日:2024-11-12
申请号:US17295480
申请日:2019-11-11
Applicant: Tokyo Electron Limited
Inventor: Yoshihiro Kawaguchi , Seiji Nakano , Munehisa Kodama , Hirotoshi Mori , Hayato Tanoue , Yohei Yamawaki
IPC: H01L21/304 , B24B7/22 , H01L21/683
Abstract: A substrate processing apparatus configured to process a substrate includes a substrate holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate; a periphery removing unit configured to remove, starting from a periphery modification layer formed on the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate, the peripheral portion from the combined substrate held by the substrate holder; and a collection unit equipped with a collection mechanism configured to collect the peripheral portion removed by the periphery removing unit.
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公开(公告)号:US12076820B2
公开(公告)日:2024-09-03
申请号:US17413599
申请日:2019-12-09
Applicant: Tokyo Electron Limited
Inventor: Hirotoshi Mori , Hayato Tanoue
CPC classification number: B23K26/53 , B23K26/03 , B23K26/0604 , B23K26/083 , H01L21/67092 , B23K26/0876 , B23K2103/56
Abstract: A substrate processing apparatus includes a holder configured to hold a combined substrate; a peripheral modifying device configured to form a peripheral modification layer to an inside of a first substrate along a boundary between a peripheral portion and a central portion; an internal modifying device configured to form an internal modification layer to the inside of the first substrate along a plane direction; a holder moving mechanism configured to move the holder in a horizontal direction. The peripheral modifying device radiates laser light for periphery to the inside of the first substrate while moving the holder to perform eccentricity correction. The internal modifying device radiates laser light for internal surface without performing the eccentricity correction at least at a center portion of the inside of the first substrate.
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公开(公告)号:US12300495B2
公开(公告)日:2025-05-13
申请号:US17627706
申请日:2020-07-09
Applicant: Tokyo Electron Limited
Inventor: Hayato Tanoue , Yohei Yamashita
IPC: H01L21/268 , B23K26/53 , B23K103/00
Abstract: A processing apparatus configured to process a processing target object includes a modifying device configured to radiate laser light to an inside of the processing target object to form multiple modification layers along a plane direction of the processing target object; and a controller configured to control an operation of the modifying device at least. The controller controls the modifying device to form: a peripheral modification layer which serves as a starting point where a peripheral portion of the processing target object as a removing target is detached; a first internal modification layer in a ring shape to be concentric with the peripheral modification layer at a diametrically inner side than the peripheral modification layer; and a second internal modification layer in a spiral shape at a diametrically inner side than the first internal modification layer.
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公开(公告)号:US12191168B2
公开(公告)日:2025-01-07
申请号:US16979191
申请日:2019-03-27
Applicant: Tokyo Electron Limited
Inventor: Hirotoshi Mori , Yoshihiro Kawaguchi , Hayato Tanoue , Kazuya Hisano
IPC: H01L21/67 , B23K26/00 , B23K26/03 , B23K26/046 , B23K26/06 , B23K26/082 , B23K26/53 , G01B11/06 , H01L21/268 , H01L21/78 , H01L23/544
Abstract: A laser processing device includes a height measurement unit configured to measure a vertical direction position of an irradiation point of a processing laser beam on an upper surface of a substrate; and a controller configured to control a vertical direction position of a light condensing unit based on the vertical direction position of the irradiation point while moving the irradiation point along multiple dividing target lines. The height measurement unit includes a coaxial laser displacement meter and a separate-axis laser displacement meter. The controller controls the vertical direction position of the light condensing unit by using only one of the coaxial or the separate-axis laser displacement meter for each of the multiple dividing target lines while the substrate is processed and performs a switchover of a laser displacement meter for controlling the vertical direction position of the light condensing unit between the coaxial and the separate-axis laser displacement meters.
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公开(公告)号:US11969827B2
公开(公告)日:2024-04-30
申请号:US17627702
申请日:2020-07-09
Applicant: Tokyo Electron Limited
Inventor: Hayato Tanoue , Yohei Yamashita , Yohei Yamawaki , Hirotoshi Mori
IPC: B23K26/53 , B23K26/08 , B23K101/40
CPC classification number: B23K26/53 , B23K26/0823 , B23K26/083 , B23K2101/40
Abstract: A processing apparatus configured to process a processing target object includes a holder configured to hold the processing target object; a holder moving mechanism configured to move the holder in a horizontal direction; a modifying device configured to radiate laser light to an inside of the processing target object to form multiple internal modification layers in a spiral shape; a modifying device moving mechanism configured to move the modifying device in the horizontal direction; and a controller configured to control an operation of forming the internal modification layers. The controller controls operations of the holder and the modifying device such that a spiral processing movement according to the formation of the internal modification layers and an eccentricity follow-up movement of correcting an eccentric amount between the holder and the processing target object held by the holder are shared by the holder and the modifying device.
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公开(公告)号:US20240395573A1
公开(公告)日:2024-11-28
申请号:US18671145
申请日:2024-05-22
Applicant: Tokyo Electron Limited
Inventor: Atsushi Nagata , Takuro Masuzumi , Norifumi Kohama , Hayato Tanoue
IPC: H01L21/67 , H01L21/66 , H01L21/683
Abstract: A bonding method of bonding substrates to each other includes forming a combined substrate by gradually bonding, with a central portion of a first substrate and a central portion of a second substrate in contact with each other, the first substrate and the second substrate from the central portions toward outer peripheral portions thereof; measuring a bonding speed in the bonding from the central portions toward the outer peripheral portions; and estimating, based on the measured bonding speed, bonding strength of the bonded combined substrate from a relationship between bonding speed and bonding strength.
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