发明申请
US20020076939A1 High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers
失效
砷化镓晶片的高密度等离子体化学气相沉积（HDP-CVD）处理
- 专利标题： High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers
- 专利标题（中）： 砷化镓晶片的高密度等离子体化学气相沉积（HDP-CVD）处理
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申请号： US09968342申请日： 2001-09-28
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公开(公告)号： US20020076939A1公开(公告)日： 2002-06-20
- 发明人: Zhuang Li , Tzuyuan Yiin , Lung-Tien Han , Kent Rossman
- 申请人： APPLIED MATERIALS, INC.
- 申请人地址： null
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： null
- 主分类号： H01L021/20
- IPC分类号： H01L021/20 ; H01L021/36 ; C23C016/00
摘要：
Method for processing gallium arsenide (GaAs) wafers is provided. One embodiment of the invention provides a method for processing a substrate comprising disposing the substrate on a substrate support member in a high density plasma chemical vapor deposition chamber, depositing a film onto a surface of the substrate, and after deposition of the film, flowing a heat transfer gas in one or more channels on a substrate support surface of the substrate support member.
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