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    Multistep remote plasma clean process
    2.
    发明申请
    Multistep remote plasma clean process 失效
    多步远程等离子体清洁过程

    公开(公告)号：US20030029475A1

    公开(公告)日：2003-02-13

    申请号：US10153315

    申请日：2002-05-21

    申请人： APPLIED MATERIALS, INC., A Delaware corporation

    发明人： Zhong Qiang Hua ,  Zhengquan Tan ,  Zhuang Li ,  Kent Rossman

    IPC分类号： C25F003/30 ,  C25F001/00

    CPC分类号： B08B7/0035 ,  C23C16/4405 ,  Y10S438/905

    摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate out of the chamber; flowing a first gas into the substrate processing chamber and forming a plasma within the chamber from the first gas in order to heat the chamber; and thereafter, extinguishing the plasma, flowing an etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to etch the unwanted deposition build-up.

    摘要翻译： 一种在将材料层沉积在设置在腔室中的衬底上之后，从衬底处理室的一个或多个内表面去除不想要的沉积积累的过程。 在一个实施例中，该方法包括将衬底转移出腔室; 将第一气体流入基板处理室，并在第一气体内在室内形成等离子体，以便加热室; 然后熄灭等离子体，将蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应物质并将反应物质输送到衬底处理室中以蚀刻不需要的沉积物积聚。

    In situ wafer heat for reduced backside contamination
    3.
    发明申请
    In situ wafer heat for reduced backside contamination 失效
    原位晶片加热，减少背面污染

    公开(公告)号：US20020102864A1

    公开(公告)日：2002-08-01

    申请号：US09771085

    申请日：2001-01-26

    申请人： Applied Materials, Inc.

    发明人： Kent Rossman

    IPC分类号： H01L021/26 ,  B05C011/00

    CPC分类号： C23C16/0209 ,  C23C14/022 ,  C23C16/0245 ,  H01J2237/022

    摘要： A method is provided for preparing a substrate for processing in a chamber that has a substrate receiving portion. The substrate is positioned within the chamber in a location not on the substrate receiving portion. A gaseous flow is provided to the chamber, from which a plasma is struck to heat the substrate. After the substrate has been heated, it is moved to the substrate receiving portion for processing.

    摘要翻译： 提供了一种制备用于在具有基板接收部分的室中进行处理的基板的方法。 衬底位于不在衬底接收部分上的位置内的腔室内。 将气流提供到腔室，等离子体从该气体流过，以加热衬底。 在基板被加热之后，移动到基板接收部分进行处理。

    Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
    4.
    发明申请
    Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput 失效
    Si调味剂减少颗粒，延长清洁频率，阻止移动离子并增加室内产量

    公开(公告)号：US20030211735A1

    公开(公告)日：2003-11-13

    申请号：US10463703

    申请日：2003-06-16

    申请人： Applied Materials, Inc.

    发明人： Kent Rossman

    IPC分类号： H01L021/44

    CPC分类号： H01J37/32477 ,  C23C16/4404 ,  C23C30/00 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/905 ,  Y10S438/913

    摘要： Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2nnull2) process gas and/or is deposited from a plasma having a density of at least 1null1011 ions/cm3.

    摘要翻译： 本发明的实施例包括沉积改进的调味膜的方法。 在一个实施例中，该方法包括在执行基板处理操作之前，在与氧化硅层相反的基板处理室的内表面上形成硅层。 在某些实施方案中，硅层包含至少70％的原子硅，由高密度硅烷（SinH2n + 2）工艺气体沉积和/或从密度为至少1×10 11个/ cm 3。

    Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes
    5.
    发明申请
    Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes 失效
    使用原位粒子传感器监测等离子体沉积过程中的粒子性能的方法

    公开(公告)号：US20020163637A1

    公开(公告)日：2002-11-07

    申请号：US10122058

    申请日：2002-04-12

    申请人： Applied Materials Inc.

    发明人： Kent Rossman ,  Len Olmer ,  Phillip Nguyen

    IPC分类号： G01N021/00 ,  H01L021/66

    CPC分类号： C23C16/4404 ,  C23C30/00 ,  H01J37/32477 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801

    摘要： Methods are provided for identifying root causes of particle issues and for developing particle-robust process recipes in plasma deposition processes. The presence of in situ particles within the substrate processing system is detected over a period of time that spans multiple distinct processing steps in the recipe. The time dependence of in situ particle levels is determined from these results. Then, the processing steps are correlated with the time dependence to identify relative particle levels with the processing steps. This information provides a direct indication of which steps result in the production of particle contaminants so that those steps may be targeted for modification in the development of particle recipes.

    摘要翻译： 提供了用于确定颗粒问题的根本原因并开发等离子体沉积工艺中的粒子稳定工艺配方的方法。 在一段时间内检测基底处理系统内原位颗粒的存在，跨越食谱中的多个不同的处理步骤。 从这些结果确定原位颗粒水平的时间依赖性。 然后，处理步骤与时间依赖相关，以利用处理步骤来识别相对颗粒水平。 该信息提供了哪些步骤导致颗粒污染物的产生的直接指示，使得可以将这些步骤用于改进颗粒配方的开发。

    Method of cleaning a semiconductor processing chamber
    7.
    发明申请
    Method of cleaning a semiconductor processing chamber 失效
    清洗半导体处理室的方法

    公开(公告)号：US20030183244A1

    公开(公告)日：2003-10-02

    申请号：US10115830

    申请日：2002-04-02

    申请人： Applied Materials, Inc. ,  A Delaware corporation

    发明人： Kent Rossman

    IPC分类号： B08B005/00

    CPC分类号： C23C16/4405 ,  B08B7/0035 ,  Y10S134/902 ,  Y10S438/905

    摘要： A method of operating a substrate processing chamber. In one embodiment the method includes processing one or more substrates in the substrate processing chamber and subsequently cleaning the chamber using a dry cleaning process. This substrate processing and dry cleaning sequence is then repeated multiple times before chamber is further cleaned by flowing a cleaning gas into the chamber and forming a plasma within the chamber from the cleaning gas in an extended cleaning process. During the extended cleaning process the plasma is maintained within the chamber for a total of at least 5 minutes before the chamber is reused to process a substrate.

    摘要翻译： 一种操作基板处理室的方法。 在一个实施例中，该方法包括处理衬底处理室中的一个或多个衬底，并随后使用干式清洁工艺清洁腔室。 然后通过将清洁气体流入室中并且在延长的清洁过程中从清洁气体中在室内形成等离子体，在室进一步清洁之前，重复该基板处理和干洗顺序多次。 在延长的清洁过程中，等离子体在室再次用于处理衬底之前保持在室内总共至少5分钟。

    Staggered in-situ deposition and etching of a dielectric layer for HDP CVD
    8.
    发明申请
    Staggered in-situ deposition and etching of a dielectric layer for HDP CVD 失效
    用于HDP CVD的电介质层的交错原位沉积和蚀刻

    公开(公告)号：US20030003244A1

    公开(公告)日：2003-01-02

    申请号：US10234988

    申请日：2002-09-04

    申请人： APPLIED MATERIALS, INC.

    发明人： Kent Rossman

    IPC分类号： C23C016/00

    CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32302 ,  H01J37/32449 ,  H01J37/32862 ,  H01J37/3299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76837

    摘要： A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

    摘要翻译： 使用去蚀刻技术沉积保形介电层的方法和装置特征在于选择性地减少沉积气体流入处理室，其中设置具有被保形电介质层覆盖的台阶表面的基板。 通过选择性地减少沉积气体进入处理室的流量，在处理室中从其中形成等离子体的溅射气体的浓度增加而不增加其中的压力。 沉积气体的流动优选地周期性地终止，以提供接近100％的溅射气体浓度。 以这种方式，可以大大增加具有足够的间隙填充特性的保形介电层的蚀刻速率，同时允许其沉积速率的增加。

    High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers
    9.
    发明申请
    High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers 失效
    砷化镓晶片的高密度等离子体化学气相沉积（HDP-CVD）处理

    公开(公告)号：US20020076939A1

    公开(公告)日：2002-06-20

    申请号：US09968342

    申请日：2001-09-28

    申请人： APPLIED MATERIALS, INC.

    发明人： Zhuang Li ,  Tzuyuan Yiin ,  Lung-Tien Han ,  Kent Rossman

    IPC分类号： H01L021/20 ,  H01L021/36 ,  C23C016/00

    CPC分类号： C23C16/466 ,  C23C16/507 ,  C23C16/52 ,  C30B25/10 ,  H01J37/32935

    摘要： Method for processing gallium arsenide (GaAs) wafers is provided. One embodiment of the invention provides a method for processing a substrate comprising disposing the substrate on a substrate support member in a high density plasma chemical vapor deposition chamber, depositing a film onto a surface of the substrate, and after deposition of the film, flowing a heat transfer gas in one or more channels on a substrate support surface of the substrate support member.

    摘要翻译： 提供了处理砷化镓（GaAs）晶片的方法。 本发明的一个实施方案提供了一种用于处理衬底的方法，包括将衬底设置在高密度等离子体化学气相沉积室中的衬底支撑构件上，在衬底的表面上沉积膜，并且在沉积膜之后， 在衬底支撑构件的衬底支撑表面上的一个或多个通道中的传热气体。