公开(公告)号：US20040245091A1

公开(公告)日：2004-12-09

申请号：US10456611

申请日：2003-06-04

申请人： Applied Materials, Inc.

发明人： M Ziaul Karim ,  Bikram Kapoor ,  Anchuan Wang ,  DongQing Li ,  Katsunary Ozeki ,  Manoj Vellaikal ,  Zhuang Li

IPC分类号： C23C014/00 ,  C23C014/32 ,  C25B009/00 ,  C25B011/00

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/76837

摘要： Abstract of the Disclosure A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.

摘要翻译： 公开的摘要使用HDP-CVD沉积，蚀刻和沉积步骤的循环来提供间隙填充方法。 在第一沉积步骤期间的流体气体包括诸如He的惰性气体，但在剩余沉积步骤期间包括H 2。 在第一沉积步骤期间流动气体的较高的平均分子量提供了一些限定在蚀刻步骤期间保护它们的间隙的结构。 在剩余沉积步骤期间流动气体的较低平均分子量具有降低的溅射特性，并且在填充间隙的剩余部分时是有效的。

公开(公告)号：US20020076939A1

公开(公告)日：2002-06-20

申请号：US09968342

申请日：2001-09-28

申请人： APPLIED MATERIALS, INC.

发明人： Zhuang Li ,  Tzuyuan Yiin ,  Lung-Tien Han ,  Kent Rossman

IPC分类号： H01L021/20 ,  H01L021/36 ,  C23C016/00

CPC分类号： C23C16/466 ,  C23C16/507 ,  C23C16/52 ,  C30B25/10 ,  H01J37/32935

摘要： Method for processing gallium arsenide (GaAs) wafers is provided. One embodiment of the invention provides a method for processing a substrate comprising disposing the substrate on a substrate support member in a high density plasma chemical vapor deposition chamber, depositing a film onto a surface of the substrate, and after deposition of the film, flowing a heat transfer gas in one or more channels on a substrate support surface of the substrate support member.

摘要翻译： 提供了处理砷化镓（GaAs）晶片的方法。 本发明的一个实施方案提供了一种用于处理衬底的方法，包括将衬底设置在高密度等离子体化学气相沉积室中的衬底支撑构件上，在衬底的表面上沉积膜，并且在沉积膜之后， 在衬底支撑构件的衬底支撑表面上的一个或多个通道中的传热气体。

公开(公告)号：US20030029475A1

公开(公告)日：2003-02-13

申请号：US10153315

申请日：2002-05-21

申请人： APPLIED MATERIALS, INC., A Delaware corporation

发明人： Zhong Qiang Hua ,  Zhengquan Tan ,  Zhuang Li ,  Kent Rossman

IPC分类号： C25F003/30 ,  C25F001/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  Y10S438/905

摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate out of the chamber; flowing a first gas into the substrate processing chamber and forming a plasma within the chamber from the first gas in order to heat the chamber; and thereafter, extinguishing the plasma, flowing an etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to etch the unwanted deposition build-up.

摘要翻译： 一种在将材料层沉积在设置在腔室中的衬底上之后，从衬底处理室的一个或多个内表面去除不想要的沉积积累的过程。 在一个实施例中，该方法包括将衬底转移出腔室; 将第一气体流入基板处理室，并在第一气体内在室内形成等离子体，以便加热室; 然后熄灭等离子体，将蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应物质并将反应物质输送到衬底处理室中以蚀刻不需要的沉积物积聚。

公开(公告)号：US20030203637A1

公开(公告)日：2003-10-30

申请号：US10137132

申请日：2002-04-30

申请人： Applied Materials, Inc.

发明人： Zhong Qiang Hua ,  Dong Qing Li ,  Zhengquan Tan ,  Zhuang Li ,  Michael Chiu Kwan ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj

IPC分类号： H01L021/311

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229

摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.

摘要翻译： 一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。 在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。 氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。 在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

公开(公告)号：US20030050724A1

公开(公告)日：2003-03-13

申请号：US09949414

申请日：2001-09-05

申请人： Applied Materials, Inc.

发明人： Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

IPC分类号： G06F019/00 ,  C23C016/00

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

摘要： A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.

摘要翻译： 提供了一种用于在不影响硬度和压缩应力的机械性能的情况下形成具有较低介电常数的HDP-CVD的氟化硅酸盐玻璃层的方法。 将包含含硅气体，含氧气体和含氟气体的气体混合物提供到处理室。 含氟气体的流量与含硅气体的流量比大于0.65。 通过施加功率密度小于12W / cm 2的源RF功率，从气体混合物产生高密度等离子体。 以大于0.8W / cm 2且小于2.4W / cm 2的偏压功率密度对处理室中的衬底施加偏压。 使用高密度等离子体将氟化硅酸盐玻璃层沉积在基板上。