Invention Application
US20030015700A1 Suitable semiconductor structure for forming multijunction solar cell and method for forming the same
审中-公开
用于形成多结太阳能电池的合适的半导体结构及其形成方法
- Patent Title: Suitable semiconductor structure for forming multijunction solar cell and method for forming the same
- Patent Title (中): 用于形成多结太阳能电池的合适的半导体结构及其形成方法
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Application No.: US09908860Application Date: 2001-07-20
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Publication No.: US20030015700A1Publication Date: 2003-01-23
- Inventor: Kurt W. Eisenbeiser , Thomas Freeburg , E. James Prendergast , William J. Ooms , Ravindranath Droopad , Jamal Ramdani
- Applicant: MOTOROLA, INC.
- Applicant Address: US IL Schaumburg
- Assignee: MOTOROLA, INC.
- Current Assignee: MOTOROLA, INC.
- Current Assignee Address: US IL Schaumburg
- Main IPC: H01L029/04
- IPC: H01L029/04 ; H01L031/036 ; H01L031/0376

Abstract:
Multijunction solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Multiple and varied accommodating buffer layers can be used to achieve the monolithic integration of multiple non-lattice matched solar cell junctions.
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