公开(公告)号：US20030012249A1

公开(公告)日：2003-01-16

申请号：US09903740

申请日：2001-07-13

申请人： Motorola, Inc.

发明人： Kurt W. Eisenbeiser

IPC分类号： H01S003/08

CPC分类号： H01S5/0261 ,  H01S5/021 ,  H01S5/0607 ,  H01S5/183

摘要： The present invention provides a monolithic piezoelectrically-tunable optoelectronic device structure which includes an epitaxial piezoelectric material that is monolithically integrated with an optical device, such as a laser structure or a photodetector structure for example. In alternate embodiments, the epitaxial piezoelectric material may be monolithically integrated either above or below the active layer of the optical device or may be positioned adjacent to the optical device. A vertical cavity surface emitting laser diode which monolithically integrates a piezoelectric thin-film exhibits high tunability and improved performance.

摘要翻译： 本发明提供了一种单片压电可调谐光电子器件结构，其包括与例如激光结构或光电检测器结构的光学器件单片集成的外延压电材料。 在替代实施例中，外延压电材料可以单片地集成在光学器件的有源层的上方或下方，或者可以被定位成与光学器件相邻。 将压电薄膜单片集成的垂直腔表面发射激光二极管显示出高可调性和改善的性能。

公开(公告)号：US20020167981A1

公开(公告)日：2002-11-14

申请号：US09852109

申请日：2001-05-09

申请人： Motorola, Inc.

发明人： Kurt W. Eisenbeiser

IPC分类号： H01S005/00

CPC分类号： H01L33/0066 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

摘要： Light emitting devices (262) and optically-active material (264) can be formed overlying monocrystalline substrates such as large silicon wafers (266) using a compliant substrate for growing the devices (262). One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer (266). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer.

摘要翻译： 发光器件（262）和光学活性材料（264）可以使用用于生长器件（262）的柔性衬底形成在诸如大硅晶片（266）之类的单晶衬底上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片（266）上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。

公开(公告)号：US20040070312A1

公开(公告)日：2004-04-15

申请号：US10267817

申请日：2002-10-10

申请人： MOTOROLA, INC.

发明人： David Penunuri ,  Kurt W. Eisenbeiser ,  Jeffrey M. Finder ,  Steven Voight ,  Steven M. Smith ,  Albert Alec Talin

IPC分类号： H03H009/25

CPC分类号： H03H3/08 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L23/522 ,  H01L27/20 ,  H01L2924/0002 ,  H03H9/02566 ,  H03H9/0542 ,  H01L2924/00

摘要： High quality epitaxial layers of monocrystalline piezoelectric materials and compound semiconductor materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. An integrated circuit including at least one surface acoustic wave device can be formed in and over the high quality epitaxial layers.

摘要翻译： 单晶压电材料和化合物半导体材料的高质量外延层可通过形成用于生长单晶层的顺应衬底而生长在单晶衬底（22）如大硅晶片上。 容纳缓冲层（24）包括通过氧化硅的非晶界面层（28）与硅晶片隔开的单晶氧化物层。 包括至少一个表面声波装置的集成电路可以形成在高质量外延层中和上方。

公开(公告)号：US20030020114A1

公开(公告)日：2003-01-30

申请号：US09911455

申请日：2001-07-25

申请人： MOTOROLA, INC.

发明人： Zhiyi Yu ,  Ravindranath Droopad ,  Kurt W. Eisenbeiser ,  Jeffrey M. Finder

IPC分类号： H01L027/108

CPC分类号： H01L21/02197 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8258 ,  H01L27/0605 ,  H01L49/003

摘要： High-density metal-insulator transition field effect transistors are grown on an advanced substrate using buried channel or surface channel designs. With respect to the advanced substrate, high quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

摘要翻译： 高密度金属 - 绝缘体转换场效应晶体管使用埋入沟道或表面沟道设计在先进的衬底上生长。 对于先进的衬底，通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在单晶衬底例如大硅晶片上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。

公开(公告)号：US20030015700A1

公开(公告)日：2003-01-23

申请号：US09908860

申请日：2001-07-20

申请人： MOTOROLA, INC.

发明人： Kurt W. Eisenbeiser ,  Thomas Freeburg ,  E. James Prendergast ,  William J. Ooms ,  Ravindranath Droopad ,  Jamal Ramdani

IPC分类号： H01L029/04 ,  H01L031/036 ,  H01L031/0376

CPC分类号： H01L31/0693 ,  H01L21/02164 ,  H01L21/02197 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02488 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/31691 ,  H01L21/8221 ,  H01L23/66 ,  H01L31/0687 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

摘要： Multijunction solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Multiple and varied accommodating buffer layers can be used to achieve the monolithic integration of multiple non-lattice matched solar cell junctions.

摘要翻译： 公开了包括通过形成用于生长单晶层的柔性衬底生长在单晶衬底（102）如大硅晶片上的单质半导体材料的高质量外延层的多结太阳能电池结构（100）。 实现顺应性衬底的形成的一种方法包括首先在硅晶片上生长容纳缓冲层（104）。 容纳缓冲器（104）层是通过氧化硅的非晶界面层（112）与硅晶片间隔开的单晶材料层。 非晶界面层（112）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 可以使用多个不同的容纳缓冲层来实现多个非晶格匹配的太阳能电池接头的单片集成。

公开(公告)号：US20020136931A1

公开(公告)日：2002-09-26

申请号：US09813779

申请日：2001-03-20

申请人： Motorola, Inc.

发明人： Kurt W. Eisenbeiser ,  Jeffrey M. Finder

IPC分类号： B32B009/00

CPC分类号： H01L27/20 ,  G02F1/11 ,  G02F1/33 ,  Y10T428/12681

摘要： High quality epitaxial layers of monocrystalline piezoelectric materials (106) and acousto-optic materials (108) can be grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide (110). The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Acousto-Optic devices (1018) may be formed using the piezoelectric materials (106) and the acousto-optic materials (108) and integrated with devices formed within the substrate (102) or other devices (1016, 1018) formed using other epitaxially grown monocrystalline layers.

摘要翻译： 单晶压电材料（106）和声光材料（108）的高质量外延层可以通过形成用于生长单晶层的柔性衬底而生长在诸如大硅晶片的单晶衬底（102）上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（102）上生长容纳缓冲层（104）。 容纳缓冲层（104）是通过氧化硅（110）的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 声光器件（1018）可以使用压电材料（106）和声光材料（108）形成，并与形成在衬底（102）内的器件或其他器件（1016,1018）集成，所述器件使用其它外延生长 单晶层。

公开(公告)号：US20020072245A1

公开(公告)日：2002-06-13

申请号：US09733181

申请日：2000-12-08

申请人： Motorola, Inc.

发明人： William J. Ooms ,  Jeffrey M. Finder ,  Kurt W. Eisenbeiser ,  Jerald A. Hallmark

IPC分类号： H01L021/31

CPC分类号： H01L37/02 ,  C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/32 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L27/16

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of monocrystalline material spaced apart from the silicon wafer (102) by an amorphous interface layer (108) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Utilizing this technique permits the fabrication of thin film pyroelectric devices (150) on a monocrystalline silicon substrate.

摘要翻译： 通过首先在硅晶片（102）上生长容纳缓冲层（104），可以将高质量的单晶材料外延层生长在大的硅晶片上。 容纳缓冲层（104）是通过氧化硅的非晶界面层（108）与硅晶片（102）间隔开的单晶材料层。 非晶界面层消耗应变并允许高质量单晶容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 利用这种技术允许在单晶硅衬底上制造薄膜热释电器件（150）。

公开(公告)号：US20020030246A1

公开(公告)日：2002-03-14

申请号：US09911490

申请日：2001-07-25

申请人： MOTOROLA, INC.

发明人： Kurt W. Eisenbeiser ,  Jamal Ramdani

IPC分类号： H01L023/58

CPC分类号： H01L21/02381 ,  C23C16/26 ,  C30B25/02 ,  C30B25/18 ,  C30B29/04 ,  H01L21/02378 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/318 ,  H01L21/8221 ,  H01L21/8258 ,  H01L23/66 ,  H01L27/0605 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/80001

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24). The accommodating buffer layer (24) is substantially lattice matched to both the underlying silicon wafer (22) and the overlying monocrystalline material layer (26). Any lattice mismatch between the accommodating buffer layer (24) and the underlying silicon substrate (22) is taken care of by the amorphous interface layer (28). In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

摘要翻译： 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长成覆盖单晶衬底（22），例如大的硅晶片。 容纳缓冲层（24）包括通过硅氧化物的非晶界面层（28）与硅晶片间隔开的单晶氧化物层。 非晶界面层（28）耗散应变并允许高质量单晶氧化物容纳缓冲层（24）的生长。 容纳缓冲层（24）与下面的硅晶片（22）和上覆单晶材料层（26）基本上晶格匹配。 通过非晶界面层（28）处理容纳缓冲层（24）和底层硅衬底（22）之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。

公开(公告)号：US20020000584A1

公开(公告)日：2002-01-03

申请号：US09755340

申请日：2001-01-05

申请人： Motorola, Inc.

发明人： Kurt W. Eisenbeiser ,  Ravindranath Droopad ,  Zhiyi Yu

IPC分类号： H01L021/00 ,  H01L031/0328 ,  H01L029/76

CPC分类号： H01L21/02381 ,  C23C16/26 ,  C30B25/02 ,  C30B25/18 ,  C30B29/04 ,  H01L21/02378 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/31691 ,  H01L21/318 ,  H01L21/8221 ,  H01L21/8258 ,  H01L23/66 ,  H01L27/0605 ,  H01L2924/0002 ,  H01L2924/00

摘要： High quality epitaxial layers of conductive monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer(24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline material spaced apart from the silicon wafer (22) by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer (24).

摘要翻译： 通过形成用于生长单晶层的顺应性衬底，可以将导电单晶材料的高质量外延层生长在覆盖单晶衬底（22），例如大硅晶片上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24）。 容纳缓冲层（24）是通过氧化硅的非晶界面层（28）与硅晶片（22）间隔开的单晶材料层。 非晶界面层（28）耗散应变并允许高质量单晶容纳缓冲层（24）的生长。

公开(公告)号：US20030016895A1

公开(公告)日：2003-01-23

申请号：US09909906

申请日：2001-07-23

申请人： MOTOROLA, INC.

发明人： Paige M. Holm ,  Kurt W. Eisenbeiser ,  Joyce Yamamoto

IPC分类号： G02F001/035 ,  G02B006/10 ,  G02B006/12

CPC分类号： B82Y20/00 ,  G02B6/12004 ,  G02B6/1225 ,  G02B2006/12061 ,  G02B2006/12078 ,  G02B2006/12123 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Photonic crystal structures may be integrally provided with such semiconductor structures, which semiconductor structures may also include optically active devices and control circuitry.

摘要翻译： 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 光子晶体结构可以与这种半导体结构一体地设置，该半导体结构还可以包括光学有源器件和控制电路。