公开(公告)号：US20030057438A1

公开(公告)日：2003-03-27

申请号：US09960402

申请日：2001-09-24

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Dirk C. Jordan

IPC: H01L029/76 ,  H01L029/04

CPC classification number: H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include the use lateral epitaxial overgrowth to facilitate production of a high quality monocrystalline material layer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括使用横向外延过度生长以促进高质量单晶材料层的制备。

公开(公告)号：US20030024471A1

公开(公告)日：2003-02-06

申请号：US09921910

申请日：2001-08-06

Applicant: MOTOROLA, INC.

Inventor： Albert Alec Talin ,  Jay A. Curless ,  Ravindranath Droopad ,  Joyce Yamamoto

IPC: H01L021/00

CPC classification number: C30B25/18 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/268

Abstract: Semiconductor structures are provided with high quality epitaxial layers of monocrystalline materials grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and an overlying monocrystalline material layer. With laser assisted fabrication, a laser energy source is used to preclean the accommodating buffer layer, to excite the accommodating buffer layer to higher energy to promote two-dimensional growth, and to amorphize the accommodating buffer layer, without requiring transport of the semiconductor structure from one environment to another. When chemical vapor deposition is utilized, the laser radiation source can be employed to crack volatile chemical precursors while selectively heating the growth substrate to enable selective deposition.

Abstract translation: 半导体结构设置有通过形成用于生长单晶层的柔性衬底生长在诸如大硅晶片的单晶衬底上生长的单晶材料的高质量外延层。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 容纳缓冲层与下面的硅晶片和上覆单晶材料层晶格匹配。 通过激光辅助制造，使用激光能量源来清除容纳缓冲层，将容纳缓冲层激发到更高的能量以促进二维生长，并使收容缓冲层非晶化，而不需要将半导体结构从 一个环境到另一个环境。 当使用化学气相沉积时，可以使用激光辐射源来裂化挥发性化学前体，同时选择性地加热生长衬底以实现选择性沉积。

公开(公告)号：US20020197881A1

公开(公告)日：2002-12-26

申请号：US09885409

申请日：2001-06-21

Applicant: MOTOROLA, INC.

Inventor： Jamal Ramdani ,  Ravindranath Droopad ,  Zhiyi Yu

IPC: H01L021/31

CPC classification number: H01L21/3141 ,  H01L21/02172 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/316 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31645 ,  H01L21/31691

Abstract: A method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12), forming on the surface (12) of the silicon substrate (10), by atomic layer deposition (ALD), a monocrystalline seed layer (20;21null) comprising a silicate material and forming, by atomic layer deposition (ALD) one or more layers of a monocrystalline high dielectric constant oxide (42) on the seed layer (20;21null).

Abstract translation: 一种制造半导体结构的方法，包括以下步骤：提供具有表面（12）的硅衬底（10），通过原子层沉积（ALD）在硅衬底（10）的表面（12）上形成单晶 种子层（20; 21'），其包含硅酸盐材料，并通过原子层沉积（ALD）在种子层（20; 21'）上形成一层或多层单晶高介电常数氧化物（42）。

公开(公告)号：US20020158245A1

公开(公告)日：2002-10-31

申请号：US09842734

申请日：2001-04-26

Applicant: Motorola, Inc.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  William J. Ooms

IPC: H01L029/12 ,  H01L021/16 ,  H01L031/0392 ,  H01L027/12

CPC classification number: H01L21/02488 ,  C30B23/02 ,  C30B25/18 ,  C30B29/16 ,  H01L21/31604

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a complaint substrate includes first growing a monocrystalline binary metal oxide material layer (14) on a substrate (12). The binary metal oxide material layer (14) is lattice matched to both the underlying substrate (12) and the overlying monocrystalline material layer (16).

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现形成投诉基板的一种方式包括首先在基板（12）上生长单晶二元金属氧化物材料层（14）。 二元金属氧化物材料层（14）与下面的衬底（12）和上层的单晶材料层（16）晶格匹配。

公开(公告)号：US20020140013A1

公开(公告)日：2002-10-03

申请号：US09824388

申请日：2001-04-02

Applicant: Motorola, Inc.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Overgaard

IPC: H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

CPC classification number: C30B25/18 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/02538 ,  H01L21/02546

Abstract: High quality ionicly-bonded semiconductor materials can be grown overlying covalently-bonded substrates (22), such as large silicon wafers, by utilizing a stable template layer (24). The template layer is formed of material consisting of alkaline earth metal, alkaline earth metal silicide, alkaline earth metal silicate and/or Zintl-type phase material. A high-quality ionicly-bonded semiconductor material (26) may then be grown over the template layer.

Abstract translation: 通过利用稳定的模板层（24），可以将高质量离子键合的半导体材料生长成覆盖在共价键合的基板（22）上，例如大的硅晶片。 模板层由由碱土金属，碱土金属硅化物，碱土金属硅酸盐和/或Zintl型相材料构成的材料形成。 然后可以在模板层上生长高质量的离子键合的半导体材料（26）。

公开(公告)号：US20020089023A1

公开(公告)日：2002-07-11

申请号：US09755691

申请日：2001-01-05

Applicant: Motorola, Inc.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Overgaard ,  John Leonard Edwards JR.

IPC: H01L029/94 ,  H01L029/76 ,  H01L031/062 ,  H01L023/58 ,  H01L021/336 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02282 ,  H01L21/28194 ,  H01L21/31691 ,  H01L29/511 ,  H01L29/516 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate and an insulating layer formed of a metal oxide-nitride such as MnOmnullxNx, wherein M is a metallic or semi-metallic element or combination of metallic and/or semi-metallic elements and m and n are integers. Semiconductor devices formed in accordance with the present invention exhibit low leakage current density and improved chemical, thermal, and electrical stability over conventional metal oxides.

Abstract translation: 用于形成高介电常数器件结构的结构和方法包括单晶半导体衬底和由诸如MnOm-xNx的金属氧化物氮化物形成的绝缘层，其中M是金属或半金属元素或金属和/ 或半金属元素，m和n是整数。 根据本发明形成的半导体器件与常规金属氧化物相比表现出低的漏电流密度和改善的化学，热和电稳定性。

公开(公告)号：US20020072253A1

公开(公告)日：2002-06-13

申请号：US09983854

申请日：2001-10-26

Applicant: MOTOROLA, INC.

Inventor： John L. Edwards JR. ,  Yi Wei ,  Dirk C. Jordan ,  Xiaoming Hu ,  James Bradley Craigo ,  Ravindranath Droopad ,  Zhiyi Yu ,  Alexander A. Demkov

IPC: H01L021/26 ,  H01L021/324 ,  H01L021/302 ,  H01L021/42 ,  H01L021/477 ,  H01L021/461

CPC classification number: C30B25/18 ,  C30B33/00 ,  H01L21/02197 ,  H01L21/02299 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31111 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30

Abstract: A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxide layer decomposes into at least one volatile species that is liberated from the surface.

Abstract translation: 提供了从单晶衬底的表面去除非晶氧化物的方法。 该方法包括沉积覆盖无定形氧化物的钝化材料。 然后加热单晶衬底，使得无定形氧化物层分解成从表面释放出的至少一种挥发性物质。

公开(公告)号：US20040094801A1

公开(公告)日：2004-05-20

申请号：US10299801

申请日：2002-11-20

Applicant: MOTOROLA, INC.

Inventor： Yong Liang ,  Ravindranath Droopad ,  Hao Li ,  Zhiyi Yu

IPC: H01L027/01

CPC classification number: H01L27/22 ,  B82Y10/00 ,  H01L43/12

Abstract: A ferromagnetic semiconductor structure is provided. The structure includes a monocrystalline semiconductor substrate and a doped titanium oxide anatase layer overlying the semiconductor substrate.

Abstract translation: 提供了铁磁半导体结构。 该结构包括单晶半导体衬底和覆盖半导体衬底的掺杂氧化钛锐钛矿层。

公开(公告)号：US20040079285A1

公开(公告)日：2004-04-29

申请号：US10279078

申请日：2002-10-24

Applicant: MOTOROLA, INC.

Inventor： Hao Li ,  Ravindranath Droopad ,  Dirk Jordan ,  Corey Overgaard ,  Zhiyi Yu

IPC: C23C016/00 ,  H01L021/306

CPC classification number: H01L21/02269 ,  C30B23/002 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31604

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The growth of the monocrystalline oxide film for accommodating buffer layer (24) is achieved through an automated oxygen delivery system (200) that controls a variety of oxygen control parameters, such as pressure control, ramp control, and flow control. The oxygen delivery system (200) is preferably a dual stage pressure control system (204, 206) with the ability to precisely control the oxygen profile in the growth chamber. The oxygen delivery system (200) allows total automation of oxide film growth in an MBE chamber (102).

Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以将单晶材料（26）的高质量外延层生长成覆盖在单晶衬底（22）如大硅晶片上。 容纳缓冲层（24）包括通过氧化硅的非晶界面层（28）与硅晶片隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 用于容纳缓冲层（24）的单晶氧化物膜的生长通过控制各种氧气控制参数（例如压力控制，斜坡控制和流量控制）的自动氧气输送系统（200）来实现。 氧气输送系统（200）优选是双级压力控制系统（204,206），其能够精确地控制生长室中的氧气分布。 氧输送系统（200）允许在MBE室（102）中氧化膜生长的完全自动化。

公开(公告)号：US20020195599A1

公开(公告)日：2002-12-26

申请号：US09884150

申请日：2001-06-20

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad

IPC: H01L029/06 ,  H01L031/0328 ,  H01L031/0336 ,  H01L031/072 ,  H01L031/109 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02543 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02546 ,  H01L21/02598

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers (22) by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide spaced apart from the silicon wafer (22) by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer.

Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底例如大硅晶片（22）上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24）。 容纳缓冲层（24）是通过氧化硅的非晶界面层（28）与硅晶片（22）间隔开的单晶氧化物层。 非晶界面层（28）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。