公开(公告)号：US20020181827A1

公开(公告)日：2002-12-05

申请号：US09870836

申请日：2001-06-01

申请人： MOTOROLA, INC.

发明人： Timothy J. Johnson ,  Kevin B. Traylor ,  William J. Ooms

IPC分类号： G02B006/12

CPC分类号： G02B6/4246 ,  G02B6/4214 ,  G02B6/43 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L31/125 ,  H01L31/16 ,  H01L2924/00011 ,  H01S5/026 ,  H01S5/0264 ,  H01L2224/80001

摘要： A system of integrated circuits including a plurality of optical semiconductor devices formed in silicon substrates such that the devices optically communicate with one another. The optical semiconductor devices are preferably formed from compound semiconductor structures. Each substrate may be formed in a single plane.

摘要翻译： 一种集成电路的系统，包括形成在硅衬底中的多个光学半导体器件，使得器件彼此光学通信。 光半导体器件优选由化合物半导体结构形成。 每个基板可以形成在单个平面中。

公开(公告)号：US20010023660A1

公开(公告)日：2001-09-27

申请号：US09871958

申请日：2001-06-04

申请人： MOTOROLA, INC.

发明人： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Daniel Overgaard ,  Jamal Ramdani ,  Jay A. Curless ,  Jerald A. Hallmark ,  William J. Ooms ,  Jun Wang

IPC分类号： C30B025/00 ,  C30B023/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/30

摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.

公开(公告)号：US20030071327A1

公开(公告)日：2003-04-17

申请号：US09978096

申请日：2001-10-17

申请人： MOTOROLA, INC.

发明人： William J. Ooms ,  Jerald A Hallmark

IPC分类号： H01L029/00

CPC分类号： H01L28/55 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31691 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/94

摘要： A semiconductor apparatus includes a capacitor having a substrate, a conductive element and an insulator. The insulator comprises a substantially monocrystalline material having a relatively high dielectric constant. The semiconductor apparatus may further include a supplemental layer having a depletion zone, suitably comprised of a high-resistivity semiconductor material, for forming a voltage-variable capacitor. To facilitate the growth of the insulator and/or other layers, the various layers are suitably lattice matched. Further, the apparatus may include one or more interface layers to facilitate lattice-matching of the various layers.

摘要翻译： 半导体装置包括具有基板，导电元件和绝缘体的电容器。 绝缘体包括具有相对较高介电常数的基本单晶材料。 半导体装置还可以包括具有用于形成电压可变电容器的适当地由高电阻率半导体材料构成的耗尽区的补充层。 为了促进绝缘体和/或其它层的生长，各层适当地晶格匹配。 此外，该装置可以包括一个或多个界面层以促进各种层的网格匹配。

公开(公告)号：US20020158245A1

公开(公告)日：2002-10-31

申请号：US09842734

申请日：2001-04-26

申请人： Motorola, Inc.

发明人： Zhiyi Yu ,  Ravindranath Droopad ,  William J. Ooms

IPC分类号： H01L029/12 ,  H01L021/16 ,  H01L031/0392 ,  H01L027/12

CPC分类号： H01L21/02488 ,  C30B23/02 ,  C30B25/18 ,  C30B29/16 ,  H01L21/31604

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a complaint substrate includes first growing a monocrystalline binary metal oxide material layer (14) on a substrate (12). The binary metal oxide material layer (14) is lattice matched to both the underlying substrate (12) and the overlying monocrystalline material layer (16).

摘要翻译： 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现形成投诉基板的一种方式包括首先在基板（12）上生长单晶二元金属氧化物材料层（14）。 二元金属氧化物材料层（14）与下面的衬底（12）和上层的单晶材料层（16）晶格匹配。

公开(公告)号：US20040217444A1

公开(公告)日：2004-11-04

申请号：US10861467

申请日：2004-06-07

申请人： MOTOROLA, INC.

发明人： William J. Ooms ,  Jerald A. Hallmark

IPC分类号： H01L029/00

CPC分类号： H01L28/55 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31691 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/94

摘要： A semiconductor apparatus includes a capacitor having a substrate, a conductive element and an insulator. The insulator comprises a substantially monocrystalline material having a relatively high dielectric constant. The semiconductor apparatus may further include a supplemental layer having a depletion zone, suitably comprised of a high-resistivity semiconductor material, for forming a voltage-variable capacitor. To facilitate the growth of the insulator and/or other layers, the various layers are suitably lattice matched. Further, the apparatus may include one or more interface layers to facilitate lattice-matching of the various layers.

公开(公告)号：US20030015700A1

公开(公告)日：2003-01-23

申请号：US09908860

申请日：2001-07-20

申请人： MOTOROLA, INC.

发明人： Kurt W. Eisenbeiser ,  Thomas Freeburg ,  E. James Prendergast ,  William J. Ooms ,  Ravindranath Droopad ,  Jamal Ramdani

IPC分类号： H01L029/04 ,  H01L031/036 ,  H01L031/0376

CPC分类号： H01L31/0693 ,  H01L21/02164 ,  H01L21/02197 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02488 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/31691 ,  H01L21/8221 ,  H01L23/66 ,  H01L31/0687 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

摘要： Multijunction solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Multiple and varied accommodating buffer layers can be used to achieve the monolithic integration of multiple non-lattice matched solar cell junctions.

摘要翻译： 公开了包括通过形成用于生长单晶层的柔性衬底生长在单晶衬底（102）如大硅晶片上的单质半导体材料的高质量外延层的多结太阳能电池结构（100）。 实现顺应性衬底的形成的一种方法包括首先在硅晶片上生长容纳缓冲层（104）。 容纳缓冲器（104）层是通过氧化硅的非晶界面层（112）与硅晶片间隔开的单晶材料层。 非晶界面层（112）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 可以使用多个不同的容纳缓冲层来实现多个非晶格匹配的太阳能电池接头的单片集成。

公开(公告)号：US20010013313A1

公开(公告)日：2001-08-16

申请号：US09780119

申请日：2001-02-09

申请人： Motorola, Inc.

发明人： Ravindranath Droopad ,  Zhiyi Yu ,  William J. Ooms ,  Jamal Ramdani

IPC分类号： C30B035/00 ,  H01L029/04 ,  H01L031/036

CPC分类号： C30B25/18 ,  C23C14/024 ,  C23C14/568 ,  C30B23/02 ,  H01L21/02373 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30 ,  Y10T117/10

摘要： An apparatus (100) and method (800) for forming high quality epitaxial layers of monocrystalline materials grown overlying monocrystalline substrates (310) such as large silicon wafers is provided. The apparatus (100) includes at least two deposition chambers (110) and (140) that are coupled together. The first chamber (110) is used to form an accommodating buffer layer (320) on the substrate (310) and the second (140) is used to form a layer of monocrystalline material (330) overlying the accommodating buffer layer (320).

摘要翻译： 提供一种用于形成生长在单晶衬底（310）如大硅晶片上的单晶材料的高质量外延层的装置（100）和方法（800）。 装置（100）包括耦合在一起的至少两个沉积室（110）和（140）。 第一腔室（110）用于在衬底（310）上形成容纳缓冲层（320），并且第二腔室（140）用于形成覆盖容纳缓冲层（320）的单晶材料层（330）。

公开(公告)号：US20030102473A1

公开(公告)日：2003-06-05

申请号：US09929024

申请日：2001-08-15

申请人： MOTOROLA, INC.

发明人： Marc Chason ,  George Valliath ,  William J. Ooms

IPC分类号： H01L021/00 ,  H01L029/12 ,  H01L033/00 ,  H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

CPC分类号： H01S5/0261 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01L33/005 ,  H01L33/0066 ,  H01S5/0206 ,  H01S5/021 ,  H01S5/183

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying a monocrystalline layer of silicon formed on a low cost substrate, such as glass. The growth of the monocrystalline materials is accomplished by forming a compliant substrate for growing the monocrystalline materials. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon layer is taken care of by the amorphous interface layer.

摘要翻译： 高质量的单晶材料外延层可以生长在低成本基底如玻璃上形成的单晶硅层上。 单晶材料的生长通过形成用于生长单晶材料的柔性衬底来实现。 容纳缓冲层包括由氧化硅的非晶界面层与硅隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅层之间的任何晶格失配。

公开(公告)号：US20020153524A1

公开(公告)日：2002-10-24

申请号：US09838273

申请日：2001-04-19

申请人： Motorola Inc.

发明人： Zhiyi Yu ,  Ravindranath Droopad ,  William J. Ooms

IPC分类号： H01L029/12 ,  H01L021/00 ,  H01L027/12 ,  H01L031/0392

CPC分类号： H01L21/02507 ,  C30B25/18 ,  H01L21/02197 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/31691

摘要： A high quality semiconductor structure includes a monocrystalline substrate and a perovskite stack overlying the substrate. The perovskite stack may be formed of a first accommodating layer formed of a first perovskite oxide material having a first lattice constant. A second accommodating layer is formed on the first accommodating layer. The second accommodating layer is formed of a second perovskite oxide material having a second lattice constant which is different from the first lattice constant of the first accommodating layer. A monocrystalline material layer is formed overlying the second accommodating layer. A strain is effected at the interface between the perovskite stack and the substrate, at the interface between the perovskite stack and the monocrystalline material layer and/or at the interface between the first accommodating layer and the second accommodating layer. The strain reduces defects in the monocrystalline material layer and results in reduced Schottky leakage current.

摘要翻译： 高质量的半导体结构包括单晶衬底和覆盖衬底的钙钛矿堆叠。 钙钛矿堆叠可以由具有第一晶格常数的第一钙钛矿氧化物材料形成的第一容纳层形成。 在第一容纳层上形成第二容纳层。 第二容纳层由具有与第一容纳层的第一晶格常数不同的第二晶格常数的第二钙钛矿氧化物材料形成。 在第二容纳层上形成单晶材料层。 在钙钛矿堆和衬底之间的界面处，在钙钛矿堆和单晶材料层之间的界面处和/或在第一容纳层和第二容纳层之间的界面处进行应变。 该应变降低了单晶材料层的缺陷，并导致肖特基漏电流减小。

公开(公告)号：US20020072245A1

公开(公告)日：2002-06-13

申请号：US09733181

申请日：2000-12-08

申请人： Motorola, Inc.

发明人： William J. Ooms ,  Jeffrey M. Finder ,  Kurt W. Eisenbeiser ,  Jerald A. Hallmark

IPC分类号： H01L021/31

CPC分类号： H01L37/02 ,  C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/32 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L27/16

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of monocrystalline material spaced apart from the silicon wafer (102) by an amorphous interface layer (108) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Utilizing this technique permits the fabrication of thin film pyroelectric devices (150) on a monocrystalline silicon substrate.

摘要翻译： 通过首先在硅晶片（102）上生长容纳缓冲层（104），可以将高质量的单晶材料外延层生长在大的硅晶片上。 容纳缓冲层（104）是通过氧化硅的非晶界面层（108）与硅晶片（102）间隔开的单晶材料层。 非晶界面层消耗应变并允许高质量单晶容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 利用这种技术允许在单晶硅衬底上制造薄膜热释电器件（150）。